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Title: Diffusivity of the interstitial hydrogen shallow donor in In 2 O 3

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [2]
  1. Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA
  2. Oak Ridge National Laboratory (ORNL), Materials Science and Technology Division, Oak Ridge, Tennessee 37831, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1398294
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 16; Related Information: CHORUS Timestamp: 2018-02-14 11:28:10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Qin, Ying, Weiser, Philip, Villalta, Karla, Stavola, Michael, Fowler, W. Beall, Biaggio, Ivan, and Boatner, Lynn. Diffusivity of the interstitial hydrogen shallow donor in In 2 O 3. United States: N. p., 2018. Web. doi:10.1063/1.4995593.
Qin, Ying, Weiser, Philip, Villalta, Karla, Stavola, Michael, Fowler, W. Beall, Biaggio, Ivan, & Boatner, Lynn. Diffusivity of the interstitial hydrogen shallow donor in In 2 O 3. United States. doi:10.1063/1.4995593.
Qin, Ying, Weiser, Philip, Villalta, Karla, Stavola, Michael, Fowler, W. Beall, Biaggio, Ivan, and Boatner, Lynn. 2018. "Diffusivity of the interstitial hydrogen shallow donor in In 2 O 3". United States. doi:10.1063/1.4995593.
@article{osti_1398294,
title = {Diffusivity of the interstitial hydrogen shallow donor in In 2 O 3},
author = {Qin, Ying and Weiser, Philip and Villalta, Karla and Stavola, Michael and Fowler, W. Beall and Biaggio, Ivan and Boatner, Lynn},
abstractNote = {},
doi = {10.1063/1.4995593},
journal = {Journal of Applied Physics},
number = 16,
volume = 123,
place = {United States},
year = 2018,
month = 4
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 6, 2018
Publisher's Accepted Manuscript

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  • Cited by 1
  • Uniaxial stress experiments performed for the 3306 cm -1 vibrational line assigned to the interstitial-hydrogen, shallow-donor center in In 2O 3 reveal its symmetry and transition- moment direction. The defect alignment that can be produced by a [001] stress applied at 165 K is due to a process that is also a hydrogen- diffusion jump, providing a microscopic determination of the diffusion constant for H in In 2O 3 and its mechanism. Lastly, our experimental results strongly complement theoretical predictions for the structure and diffusion of the interstitial hydrogen donor center in In 2O 3.
  • Hydrogen has been found to be an n-type dopant in In2O3 that gives rise to unintentional conductivity. An infrared (IR) absorption line observed at 3306 cm-1 has been assigned to the Hi+ center. Two types of experiments have been performed to determine the diffusivity of Hi+ in In2O3 from its IR absorption spectra. (i) At temperatures near 700 K, the O-H line at 3306 cm-1 has been used to determine the diffusivity of Hi+ from its in-diffusion and out-diffusion behavior. (ii) At temperatures near 160 K, stress has been used to produce a preferential alignment of the Hi+ center thatmore » has been detected in IR absorption experiments made with polarized light. With the help of theory, the kinetics with which a stress-induced alignment can be produced yield the time constant for a single jump of the Hi+ center and also the diffusivity of Hi+ near 160 K. The combination of the diffusivity of Hi+ found near 700 K by mass-transport measurements along with the diffusivity found near 160 K from the time constant for a single Hi+ jump determines the diffusivity for Hi+ over eleven decades!« less
  • The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, f{sub A}. Accurate knowledge of f{sub A} is required for predictive simulations of Si processing during which the point defect population is perturbed, such as transient enhanced diffusion. While experimental determination of f{sub A} is traditionally based on an underdetermined system of equations, we show here that it is actually possible to derive expressions that give meaningful bounds on f{sub A} without any further assumptions but that of local equilibrium. By employing a pair of dopants undermore » the same point-defect perturbance, and by utilizing perturbances very far from equilibrium, we obtain experimentally f{sub Sb}{le}0.012 and f{sub B}{ge}0.98 at temperatures of {approximately}800{degree}C, which are the strictest bounds reported to date. Our results are in agreement with a theoretical expectation that a substitutional dopant in Si should either be a pure vacancy, or a pure interstitial(cy) diffuser. {copyright} {ital 1997 American Institute of Physics.}« less
  • The effect of carbon on self-interstitial diffusion in Si is studied by means of a kinetic Monte{endash}Carlo simulation. It is found that modest levels of carbon ({approx_gt}10{sup 17}thinspcm{sup {minus}3}) significantly reduce the effective interstitial diffusivity. From fitting self-interstitial profiles, migration energies and prefactors of the effective diffusivity have been determined for a variety of background carbon levels. In addition, we re-examine recent experiments performed in samples with significant levels of carbon, which attempt to measure the effective diffusivity by monitoring the spreading of boron marker layers. We show that the presence of boron in delta-doped markers significantly alters the measuredmore » self-interstitial diffusivity. {copyright} {ital 1998 American Institute of Physics.}« less