PLZT Film Capacitors for Power Electronics and Energy Storage Applications
Abstract
Ceramic film capacitors with high dielectric constant and high breakdown strength hold special promise for applications demanding high power density. By means of chemical solution deposition, we deposited ≈2-μm-thick films of lanthanum-doped lead zirconate titanate (PLZT) on LaNiO3-buffered Ni (LNO/Ni) foils and platinized silicon (PtSi) substrates. The dielectric properties and energy storage performance of the resulting samples were determined under a high level of applied electric field. X-ray diffraction stress analysis revealed that PLZT on LNO/Ni bears a compressive stress of ≈370 MPa while PLZT on PtSi endures a tensile stress of ≈250 MPa. Compressive stress was found to lead to heightened polarization, improved tunability, increased irreversible domain wall motion, and enhanced breakdown strength for PLZT deposited on the LNO/Ni as compared with the PtSi substrate. We observed a tunability of ≈55 and ≈40 % at room temperature under 100 kV/cm applied field, remanent polarization of ≈23.5 and ≈7.4 µC/cm^2, coercive electric field of ≈25.6 and ≈21.1 kV/cm, and dielectric breakdown strength of ≈2.6 and ≈1.5 MV/cm for PLZT deposited on LNO/Ni foils and PtSi substrates, respectively. A high recoverable energy density of ≈85 J/cm^3 and energy conversion efficiency of ≈65 % were measured on the PLZT film grown onmore »
- Authors:
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE) - Office of Vehicle Technology
- OSTI Identifier:
- 1398273
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Conference
- Resource Relation:
- Conference: 2014 Materials Science and Technology (MS&T14), 10/12/14 - 10/16/14, Pittsburgh, PA, USA
- Country of Publication:
- United States
- Language:
- English
- Subject:
- Ferroelectricity; PLZT; ceramic film capacitor; energy storage; residual stress
Citation Formats
Ma, Beihai, Hu, Zhongqiang, Koritala, Rachel E., Lee, Tae H., Dorris, Stephen E., and Balachandran, Uthamalingam. PLZT Film Capacitors for Power Electronics and Energy Storage Applications. United States: N. p., 2015.
Web. doi:10.1007/s10854-015-3025-0.
Ma, Beihai, Hu, Zhongqiang, Koritala, Rachel E., Lee, Tae H., Dorris, Stephen E., & Balachandran, Uthamalingam. PLZT Film Capacitors for Power Electronics and Energy Storage Applications. United States. https://doi.org/10.1007/s10854-015-3025-0
Ma, Beihai, Hu, Zhongqiang, Koritala, Rachel E., Lee, Tae H., Dorris, Stephen E., and Balachandran, Uthamalingam. Tue .
"PLZT Film Capacitors for Power Electronics and Energy Storage Applications". United States. https://doi.org/10.1007/s10854-015-3025-0. https://www.osti.gov/servlets/purl/1398273.
@article{osti_1398273,
title = {PLZT Film Capacitors for Power Electronics and Energy Storage Applications},
author = {Ma, Beihai and Hu, Zhongqiang and Koritala, Rachel E. and Lee, Tae H. and Dorris, Stephen E. and Balachandran, Uthamalingam},
abstractNote = {Ceramic film capacitors with high dielectric constant and high breakdown strength hold special promise for applications demanding high power density. By means of chemical solution deposition, we deposited ≈2-μm-thick films of lanthanum-doped lead zirconate titanate (PLZT) on LaNiO3-buffered Ni (LNO/Ni) foils and platinized silicon (PtSi) substrates. The dielectric properties and energy storage performance of the resulting samples were determined under a high level of applied electric field. X-ray diffraction stress analysis revealed that PLZT on LNO/Ni bears a compressive stress of ≈370 MPa while PLZT on PtSi endures a tensile stress of ≈250 MPa. Compressive stress was found to lead to heightened polarization, improved tunability, increased irreversible domain wall motion, and enhanced breakdown strength for PLZT deposited on the LNO/Ni as compared with the PtSi substrate. We observed a tunability of ≈55 and ≈40 % at room temperature under 100 kV/cm applied field, remanent polarization of ≈23.5 and ≈7.4 µC/cm^2, coercive electric field of ≈25.6 and ≈21.1 kV/cm, and dielectric breakdown strength of ≈2.6 and ≈1.5 MV/cm for PLZT deposited on LNO/Ni foils and PtSi substrates, respectively. A high recoverable energy density of ≈85 J/cm^3 and energy conversion efficiency of ≈65 % were measured on the PLZT film grown on LNO/Ni.},
doi = {10.1007/s10854-015-3025-0},
url = {https://www.osti.gov/biblio/1398273},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {12}
}
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