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Title: Structural and electrical properties of single crystalline SrZrO 3 epitaxially grown on Ge (001)

Abstract

Here, we present structural and electrical characterization of SrZrO 3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO 3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 ºC in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO 3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.65 eV, respectively. As a standalone film, SrZrO 3 exhibits several characteristics that are ideal for applications as a gate dielectric on Ge. We find that 4 nm thick films exhibit low leakage current densities, and a dielectric constant of κ ~ 25 that corresponds to an equivalent oxide thickness of 0.70 nm.

Authors:
 [1];  [1];  [2]; ORCiD logo [3];  [3];  [1];  [2];  [3];  [1]
  1. Univ. of Texas, Arlington, TX (United States)
  2. North Carolina State Univ., Raleigh, NC (United States)
  3. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1398193
Alternate Identifier(s):
OSTI ID: 1377670
Report Number(s):
PNNL-SA-126528
Journal ID: ISSN 0021-8979; 49306; KC0203020
Grant/Contract Number:
AC05-76RL01830; 10122
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 8; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; Environmental Molecular Sciences Laboratory

Citation Formats

Lim, Z. H., Ahmadi-Majlan, K., Grimley, E. D., Du, Y., Bowden, M., Moghadam, R., LeBeau, J. M., Chambers, S. A., and Ngai, J. H. Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001). United States: N. p., 2017. Web. doi:10.1063/1.5000142.
Lim, Z. H., Ahmadi-Majlan, K., Grimley, E. D., Du, Y., Bowden, M., Moghadam, R., LeBeau, J. M., Chambers, S. A., & Ngai, J. H. Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001). United States. doi:10.1063/1.5000142.
Lim, Z. H., Ahmadi-Majlan, K., Grimley, E. D., Du, Y., Bowden, M., Moghadam, R., LeBeau, J. M., Chambers, S. A., and Ngai, J. H. Mon . "Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)". United States. doi:10.1063/1.5000142.
@article{osti_1398193,
title = {Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)},
author = {Lim, Z. H. and Ahmadi-Majlan, K. and Grimley, E. D. and Du, Y. and Bowden, M. and Moghadam, R. and LeBeau, J. M. and Chambers, S. A. and Ngai, J. H.},
abstractNote = {Here, we present structural and electrical characterization of SrZrO3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 ºC in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.65 eV, respectively. As a standalone film, SrZrO3 exhibits several characteristics that are ideal for applications as a gate dielectric on Ge. We find that 4 nm thick films exhibit low leakage current densities, and a dielectric constant of κ ~ 25 that corresponds to an equivalent oxide thickness of 0.70 nm.},
doi = {10.1063/1.5000142},
journal = {Journal of Applied Physics},
number = 8,
volume = 122,
place = {United States},
year = {Mon Aug 28 00:00:00 EDT 2017},
month = {Mon Aug 28 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on August 28, 2018
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Cited by: 2 works
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