Metastable defect response in CZTSSe from admittance spectroscopy

Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

doi:10.1063/1.4996283

Title: Metastable defect response in CZTSSe from admittance spectroscopy

Journal Article · Mon Oct 02 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4996283· OSTI ID:1405282

Koeper, Mark J. ^[1]; Hages, Charles J. ^[2]; Li, Jian V. ^[3]; Levi, Dean ^[4]; Agrawal, Rakesh ^[1]

Purdue Univ., West Lafayette, IN (United States)
Helmholtz-Zentrum Berlin (HZB), (Germany)
Texas State Univ., San Marco, TX (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)₄ where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1405282

Alternate ID(s):: OSTI ID: 1398122

Report Number(s):: NREL/JA-5J00-70373

Journal Information:: Applied Physics Letters, Vol. 111, Issue 14; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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Influences of buffer material and fabrication atmosphere on the electrical properties of CdTe solar cells Awni, Rasha A.; Li, Deng‐Bing; Song, Zhaoning Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 12 https://doi.org/10.1002/pip.3192	journal	September 2019
The Effects of Hydrogen Iodide Back Surface Treatment on CdTe Solar Cells Awni, Rasha A.; Li, Deng-Bing; Grice, Corey R. Solar RRL, Vol. 3, Issue 3 https://doi.org/10.1002/solr.201800304	journal	January 2019
The electrical and optical properties of kesterites Grossberg, Maarja; Krustok, Jüri; Hages, Charles J. Journal of Physics: Energy, Vol. 1, Issue 4 https://doi.org/10.1088/2515-7655/ab29a0	journal	August 2019

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