Device fabrication, characterization, and thermal neutron detection response of LiZnP and LiZnAs semiconductor devices

Montag, Benjamin W.; Ugorowski, Philip B.; Nelson, Kyle A.; Edwards, Nathaniel S.; McGregor, Douglas S.

doi:10.1016/j.nima.2016.08.037

Title: Device fabrication, characterization, and thermal neutron detection response of LiZnP and LiZnAs semiconductor devices

Journal Article · Sat Aug 20 00:00:00 EDT 2016 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

DOI:https://doi.org/10.1016/j.nima.2016.08.037· OSTI ID:1532882

Montag, Benjamin W. ^[1]; Ugorowski, Philip B. ^[1]; Nelson, Kyle A. ^[1]; Edwards, Nathaniel S. ^[1]; McGregor, Douglas S. ^[1]

Kansas State Univ., Manhattan, KS (United States). Semiconductor Materials and Radiological Technologies (S.M.A.R.T) Lab. Dept. of Mechanical and Nuclear Engineering

Nowotny-Juza compounds continue to be explored as candidates for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled ³He and ¹⁰BF₃ detectors. The ⁶Li(n,t)⁴He reaction yields a total Q-value of 4.78 MeV, larger than ¹⁰B, an energy easily identified above background radiations. Hence, devices fabricated from semiconductor compounds having either natural Li (nominally 7.5% ⁶Li) or enriched ⁶Li (usually 95% ⁶Li) as constituent atoms may provide a material for compact high efficiency neutron detectors. Starting material was synthesized by preparing equimolar portions of Li, Zn, and As sealed under vacuum (10^-6 Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace [1]. The raw synthesized material indicated the presence high impurity levels (material and electrical property characterizations). A static vacuum sublimation in quartz was performed to help purify the synthesized material [2], [3]. Bulk crystalline samples were grown from the purified material [4], [5]. Samples were cut using a diamond wire saw, and processed into devices. Bulk resistivity was determined from I–V curve measurements, ranging from 10⁶–10¹¹ Ω cm. Devices were characterized for sensitivity to 5.48 MeV alpha particles, 337 nm laser light, and neutron sensitivity in a thermal neutron diffracted beam at the Kansas State University TRIGA Mark II nuclear reactor. Thermal neutron reaction product charge induction was measured with a LiZnP device, and the reaction product spectral response was observed.

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Research Organization:: Kansas State Univ., Manhattan, KS (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: FG52-08NA28766; # DE-FEG52-08NA28766

OSTI ID:: 1532882

Alternate ID(s):: OSTI ID: 1397734

Journal Information:: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 836; ISSN 0168-9002

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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Cited By (2)

Room temperature semiconductor detectors for nuclear security Johns, Paul M.; Nino, Juan C. Journal of Applied Physics, Vol. 126, Issue 4 https://doi.org/10.1063/1.5091805	journal	July 2019
Search for thermoelectricity in Li-based half-Heusler alloys: a DFT study Materials Research Express, Vol. 5, Issue 1, p. 014009 https://doi.org/10.1088/2053-1591/aaa507	journal	January 2018

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