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Title: Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1397659
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Microelectronic Engineering
Additional Journal Information:
Journal Volume: 178; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-09-01 20:00:07; Journal ID: ISSN 0167-9317
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, and Shluger, Alexander L.. Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging. Netherlands: N. p., 2017. Web. doi:10.1016/j.mee.2017.05.012.
Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, & Shluger, Alexander L.. Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging. Netherlands. doi:10.1016/j.mee.2017.05.012.
Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, and Shluger, Alexander L.. Thu . "Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging". Netherlands. doi:10.1016/j.mee.2017.05.012.
@article{osti_1397659,
title = {Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging},
author = {Strand, Jack and Dicks, Oliver A. and Kaviani, Moloud and Shluger, Alexander L.},
abstractNote = {},
doi = {10.1016/j.mee.2017.05.012},
journal = {Microelectronic Engineering},
number = C,
volume = 178,
place = {Netherlands},
year = {Thu Jun 01 00:00:00 EDT 2017},
month = {Thu Jun 01 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1016/j.mee.2017.05.012

Citation Metrics:
Cited by: 1 work
Citation information provided by
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