skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1397659
Grant/Contract Number:
AC02-06CH11357
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Microelectronic Engineering
Additional Journal Information:
Journal Volume: 178; Journal Issue: C; Related Information: CHORUS Timestamp: 2017-10-04 21:32:40; Journal ID: ISSN 0167-9317
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, and Shluger, Alexander L. Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging. Netherlands: N. p., 2017. Web. doi:10.1016/j.mee.2017.05.012.
Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, & Shluger, Alexander L. Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging. Netherlands. doi:10.1016/j.mee.2017.05.012.
Strand, Jack, Dicks, Oliver A., Kaviani, Moloud, and Shluger, Alexander L. Thu . "Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging". Netherlands. doi:10.1016/j.mee.2017.05.012.
@article{osti_1397659,
title = {Hole trapping in amorphous HfO 2 and Al 2 O 3 as a source of positive charging},
author = {Strand, Jack and Dicks, Oliver A. and Kaviani, Moloud and Shluger, Alexander L.},
abstractNote = {},
doi = {10.1016/j.mee.2017.05.012},
journal = {Microelectronic Engineering},
number = C,
volume = 178,
place = {Netherlands},
year = {Thu Jun 01 00:00:00 EDT 2017},
month = {Thu Jun 01 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on May 25, 2018
Publisher's Accepted Manuscript

Save / Share:
  • In this work, a dielectric stack with Al{sub 2}O{sub 3}/HfO{sub 2}/SiO{sub 2} (1.8 nm/1.6 nm/2.5 nm) trilayer structure prepared by low temperature in situ natural oxidation during dc sputtering is investigated. We study the electrical characteristics, including the dielectric leakage of 10{sup -8} A/cm{sup 2} at V{sub g}=-2 V, the current transport mechanism and trap distributions through the trilayer dielectric stack. The Fowler-Nordheim barrier height of the prepared Al{sub 2}O{sub 3}(phi{sub FN,Al{sub 2O{sub 3}}}) was extracted as 3.06+-0.15 eV. The current variation ratios [DELTAJ{sub g}/J{sub g}(0)] during constant voltage stressing were found to decrease with raising gate stress voltages formore » the trilayer stack in comparison with that [DELTAJ{sub g}/J{sub g}(0)] increase with raising gate stress voltages for the two-layer HfO{sub 2}/SiO{sub 2} stack. Shallow traps located in HfO{sub 2} were supposed to be major trapping centers within the trilayer stack. The proposed method of in situ oxidation during dc sputtering is of merit and low in process temperature. The trilayer dielectric stacks are an alternative option for nonvolatile memory application, especially under the consideration of low temperature limitation.« less
  • Cited by 2
  • Solvent-refined lignite (SRL) can be produced by treating lignite (not dried) with CO-H/sub 2/, donor solvent and high temperature. This reactive black solid softens at about 150/sup 0/C, is soluble in many organic solvents, is very low in ash and sulfur, and appears to be a good feedstock for further upgrading. Thus, a wide-ranging study was undertaken to determine the best reducing conditions for converting SRL to light distillable liquid fuels and/or chemical feedstocks. Batch autoclave studies were carried out in the temperature range of 375-450/sup 0/C, hydrogen pressure range of 1500-4500 psi, with catalysts Ni-Mo-Al/sub 2/O/sub 3/, Co-Mo-Al/sub 2/O/submore » 3/, Ni-W-Al/sub 2/O/sub 3/. Ni-W-SiO/sub 2/-Al/sub 2/O/sub 3/, SiO/sub 2/-Al/sub 2/O/sub 3/, Al/sub 2/O/sub 3/,SnCl/sub 2/, and presulfided catalysts Ni-Mo-Al/sub 2/O/sub 3/, Co-Mo-Al/sub 2/O/sub 3/, Ni-W-Al/sub 2/O/sub 3/. Varying amounts of the solvents tetrahydrofuran, tetralin, napthalene, and FS-120 petroleum fraction were also studied. Reductions without any solvent were studied too and were quite successful. The results were evaluated in terms of the amount of light liquids produced, deoxygenation, denitrification, hydrogen-carbon ratios, aromatic-aliphatic hydrogen ratios, and benzene solubility of unconverted material. Best results were obtained with a presulfided Ni-Mo-Al/sub 2/O/sub 3/ catalyst at 450/sup 0/C, operating pressure of about 3500 psi with a 1:1 SRL-tetralin solvent ratio (90 percent overall conversion, approx.20 percent light liquid (1), 15 percent light oil (2), 20 percent heavy oil (3 and 4), 10 percent unconverted). However, operating without any solvent also gave satisfactory results (88 percent overall conversion, 40 percent light liquid, 10 percent light oil, 10 percent heavy oil, 12 percent unconverted. Detailed gas chromatography-mass spectrometry (GC-MS) studies of selected liquid fractions indicate a high degree of aromaticity as tetralins, hydrophenanthrenes, and hydropyrenes.« less
  • Nanolaminates of polycrystalline (tetragonal+orthorhombic) HfO{sub 2} and amorphous Al{sub 2}O{sub 3} are sputter deposited on unheated fused SiO{sub 2}, air annealed at 573-1273 K, and analyzed by x-ray diffraction and spectrophometry. Significant O 2p{yields}Hf 5d interband absorption occurs in all films at energy E{>=}6.2 eV. For E<6.2 eV, films annealed below 1273 K retain a featureless optical absorption edge despite further crystallization. A band with a 5.65 eV onset concurrently develops with m-HfO{sub 2} crystallization after a 1273 K anneal, indicating this phase and not nanocrystallinity per se is responsible for increased absorption.