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Title: Detailed investigation of TLM contact resistance measurements on crystalline silicon solar cells

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1397437
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Solar Energy
Additional Journal Information:
Journal Volume: 151; Journal Issue: C; Related Information: CHORUS Timestamp: 2017-10-04 21:01:24; Journal ID: ISSN 0038-092X
Publisher:
Elsevier
Country of Publication:
United States
Language:
English

Citation Formats

Guo, Siyu, Gregory, Geoffrey, Gabor, Andrew M., Schoenfeld, Winston V., and Davis, Kristopher O. Detailed investigation of TLM contact resistance measurements on crystalline silicon solar cells. United States: N. p., 2017. Web. doi:10.1016/j.solener.2017.05.015.
Guo, Siyu, Gregory, Geoffrey, Gabor, Andrew M., Schoenfeld, Winston V., & Davis, Kristopher O. Detailed investigation of TLM contact resistance measurements on crystalline silicon solar cells. United States. doi:10.1016/j.solener.2017.05.015.
Guo, Siyu, Gregory, Geoffrey, Gabor, Andrew M., Schoenfeld, Winston V., and Davis, Kristopher O. Sat . "Detailed investigation of TLM contact resistance measurements on crystalline silicon solar cells". United States. doi:10.1016/j.solener.2017.05.015.
@article{osti_1397437,
title = {Detailed investigation of TLM contact resistance measurements on crystalline silicon solar cells},
author = {Guo, Siyu and Gregory, Geoffrey and Gabor, Andrew M. and Schoenfeld, Winston V. and Davis, Kristopher O.},
abstractNote = {},
doi = {10.1016/j.solener.2017.05.015},
journal = {Solar Energy},
number = C,
volume = 151,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 2017},
month = {Sat Jul 01 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1016/j.solener.2017.05.015

Citation Metrics:
Cited by: 2works
Citation information provided by
Web of Science

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  • This paper summarizes recent progress in the development of back-contact crystalline-silicon (c-Si) solar cells and modules at Sandia National Laboratories. Back-contact cells have potentially improved efficiencies through the elimination of grid obscuration and allow for significant simplifications in the module assembly process. Optimization of the process sequence has improved the efficiency of our back-contact cell ({open_quotes}emitter wrap through{close_quotes}) from around 12{percent} to near 17{percent} in the past 12 months. In addition, recent theoretical work has elucidated the device physics of emitter wrap-through cells. Finally, improvements in the assembly process using back-contact cells are described. {copyright} {ital 1999 American Institute ofmore » Physics.}« less
  • A technique for measuring the electrical characteristics of contacts to doped hydrogenated amorphous silicon (a-Si:H) or other high-resistivity thin-film semiconductors is developed. Experimental results for metal and conductive transparent oxide contacts to both n- and p-type a-Si:H are presented and the significance of these values to solar cell applications discussed.
  • This paper describes the application of a new iterative method to numerical calculation of the performance of amorphous silicon p-i-n solar cells. Using this method, the effects of gap-state density, dopant impurities (B and P), and various cell parameters (diffusion length, interface recombination velocities, thickness of the i layer, etc.) on cell characteristics are investigated. The calculated results show that a strong electric field advantageously effects cell characteristics (especially through fill factor) in the i-layer where many photocarriers are generated. However, a uniform field isn't always adequate for high conversion efficiency. The improvement in conversion efficiency provided by boron dopingmore » is attributed to stretching of the diffusion length rather than rearrangement of the field distribution.« less
  • This work explores the application of transparent nitrogen doped copper oxide (CuO{sub x}:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuO{sub x}:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuO{sub x}:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contactmore » resistivity of ∼10 mΩ cm{sup 2} has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.« less