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Title: Investigation of the Electronic Properties of Cadmium Zinc Telluride (CZT) Detectors using a Nuclear Microprobe

Abstract

The electronic transport properties of Cadmium Zinc Telluride (CZT) determine the charge collection efficiency (i.e. the signal quality) of CZT detectors. These properties vary on both macroscopic and microscopic scale and depend on the presence of impurities and defects introduced during the crystal growth. Ion Beam Induced Charge Collection (IBICC) is a proven method to measure the charge collection efficiency. Using an ion microbeam, the charge collection efficiency can be mapped with submicron resolution, and the map of electronic properties (such as drift length) can be calculated from the measurement. A more sophisticated version of IBICC, the Time Resolved IBICC (TRIBICC) allows them to determine the mobility and the life time of the charge carriers by recording and analyzing the transient waveform of the detector signal. Furthermore, lateral IBICC and TRIBICC can provide information how the charge collection efficiency depends on the depth where the charge carriers are generated. This allows one to deduce information on the distribution of the electric field and transport properties of the charge carriers along the detector axis. IBICC and TRIBICC were used at the Sandia microbeam facility to image electronic properties of several CZT detectors. From the lateral TRIBICC measurement the electron and holemore » drift length profiles were calculated.« less

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
13974
Report Number(s):
SAND99-2683C
TRN: US0110848
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 11th International Workshop on Room Temperature Semiconductor X-Ray, Vienna (AT), 10/10/1999--10/15/1999; Other Information: PBD: 18 Oct 1999
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CADMIUM TELLURIDES; CHARGE CARRIERS; CHARGE COLLECTION; CRYSTAL GROWTH; ION BEAMS; WAVE FORMS; ZINC TELLURIDES; CDTE SEMICONDUCTOR DETECTORS; ELECTRICAL PROPERTIES

Citation Formats

BRUNETT, BRUCE A, DOYLE, BARNEY L, JAMES, RALPH B, VIZKELETHY, GYORGY, and WALSH, DAVID S. Investigation of the Electronic Properties of Cadmium Zinc Telluride (CZT) Detectors using a Nuclear Microprobe. United States: N. p., 1999. Web.
BRUNETT, BRUCE A, DOYLE, BARNEY L, JAMES, RALPH B, VIZKELETHY, GYORGY, & WALSH, DAVID S. Investigation of the Electronic Properties of Cadmium Zinc Telluride (CZT) Detectors using a Nuclear Microprobe. United States.
BRUNETT, BRUCE A, DOYLE, BARNEY L, JAMES, RALPH B, VIZKELETHY, GYORGY, and WALSH, DAVID S. Mon . "Investigation of the Electronic Properties of Cadmium Zinc Telluride (CZT) Detectors using a Nuclear Microprobe". United States. https://www.osti.gov/servlets/purl/13974.
@article{osti_13974,
title = {Investigation of the Electronic Properties of Cadmium Zinc Telluride (CZT) Detectors using a Nuclear Microprobe},
author = {BRUNETT, BRUCE A and DOYLE, BARNEY L and JAMES, RALPH B and VIZKELETHY, GYORGY and WALSH, DAVID S},
abstractNote = {The electronic transport properties of Cadmium Zinc Telluride (CZT) determine the charge collection efficiency (i.e. the signal quality) of CZT detectors. These properties vary on both macroscopic and microscopic scale and depend on the presence of impurities and defects introduced during the crystal growth. Ion Beam Induced Charge Collection (IBICC) is a proven method to measure the charge collection efficiency. Using an ion microbeam, the charge collection efficiency can be mapped with submicron resolution, and the map of electronic properties (such as drift length) can be calculated from the measurement. A more sophisticated version of IBICC, the Time Resolved IBICC (TRIBICC) allows them to determine the mobility and the life time of the charge carriers by recording and analyzing the transient waveform of the detector signal. Furthermore, lateral IBICC and TRIBICC can provide information how the charge collection efficiency depends on the depth where the charge carriers are generated. This allows one to deduce information on the distribution of the electric field and transport properties of the charge carriers along the detector axis. IBICC and TRIBICC were used at the Sandia microbeam facility to image electronic properties of several CZT detectors. From the lateral TRIBICC measurement the electron and hole drift length profiles were calculated.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {10}
}

Conference:
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