An ultra-wideband CMOS PA with dummy filling for reliability

Chang, Yu-Ting; Ye, Yu; Xu, Hongtao; Domier, Calvin; Luhmann, N. C.; Gu, Q. Jane

doi:10.1016/j.sse.2016.11.015

Title: An ultra-wideband CMOS PA with dummy filling for reliability

Journal Article · Fri Nov 25 00:00:00 EST 2016 · Solid-State Electronics

DOI:https://doi.org/10.1016/j.sse.2016.11.015· OSTI ID:1534344

Chang, Yu-Ting ^[1]; Ye, Yu ^[1]; Xu, Hongtao ^[2]; Domier, Calvin ^[1]; Luhmann, N. C. ^[1]; Gu, Q. Jane ^[1]

University of California, Davis, CA (United States)
Fudan University, Shanghai (China)

A V-band power amplifier in a bulk 65 nm CMOS technology with a peak gain 14.5 dB and 3-dB bandwidth of 28.8 GHz (50.8–79.6 GHz) is presented. The techniques to boost bandwidth and power efficiency are presented. In addition, the design of dummy filling to satisfy manufacturing density requirements while having negligible effects on performances is discussed in details. The PA features a three stage transformer coupled differential architecture with integrated input and output baluns on-chip. The PA achieves a measured saturated output power of 15.1 dBm and output 1 dB compression power of 12.9 dBm at 65 GHz. The peak power-added efficiency is 18.9%. The entire PA occupies area of 0.31 mm², while consuming 150 mW from a 1.25 V supply.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Univ. of California, Davis, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: FG02-99ER54531

OSTI ID:: 1534344

Alternate ID(s):: OSTI ID: 1397393

Journal Information:: Solid-State Electronics, Vol. 129, Issue C; ISSN 0038-1101

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

References (10)

A 58–65 GHz Neutralized CMOS Power Amplifier With PAE Above 10% at 1-V Supply Chan, Wei L.; Long, John R. IEEE Journal of Solid-State Circuits, Vol. 45, Issue 3 https://doi.org/10.1109/JSSC.2009.2039274	journal	March 2010
Millimeter-Wave Self-Healing Power Amplifier With Adaptive Amplitude and Phase Linearization in 65-nm CMOS Liu, Jenny Yi-Chun; Berenguer, Roc; Chang, Mau-Chung Frank IEEE Transactions on Microwave Theory and Techniques, Vol. 60, Issue 5 https://doi.org/10.1109/TMTT.2012.2189119	journal	May 2012
A CMOS Broadband Power Amplifier With a Transformer-Based High-Order Output Matching Network Wang, Hua; Sideris, Constantine; Hajimiri, Ali IEEE Journal of Solid-State Circuits, Vol. 45, Issue 12 https://doi.org/10.1109/JSSC.2010.2077171	journal	December 2010
A 17–35 GHz Broadband, High Efficiency PHEMT Power Amplifier Using Synthesized Transformer Matching Technique Huang, Pin-Cheng; Tsai, Zuo-Min; Lin, Kun-You IEEE Transactions on Microwave Theory and Techniques, Vol. 60, Issue 1 https://doi.org/10.1109/TMTT.2011.2170091	journal	January 2012
A CMOS class-A 65nm power amplifier for 60 GHz applications Quemerais, T.; Moquillon, L.; Pruvost, S. 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) https://doi.org/10.1109/SMIC.2010.5422847	conference	January 2010
A dual-mode highly efficient 60 GHz power amplifier in 65 nm CMOS Farahabadi, Payam M.; Moez, Kambiz 2014 IEEE Radio Frequency Integrated Circuits Symposium https://doi.org/10.1109/RFIC.2014.6851684	conference	June 2014
A Compact Single Stage V-Band CMOS Injection-Locked Power Amplifier With 17.3% Efficiency Lin, Jiafu; Boon, Chirn Chye; Yi, Xiang IEEE Microwave and Wireless Components Letters, Vol. 24, Issue 3 https://doi.org/10.1109/LMWC.2013.2291858	journal	March 2014
A wideband 65nm CMOS transformer-coupled power amplifier for WiGig applications Larie, Aurelien; Kerherve, Eric; Martineau, Baudouin 2014 9th European Microwave Integrated Circuit Conference https://doi.org/10.1109/EuMIC.2014.6997786	conference	October 2014
A 55–67GHz power amplifier with 13.6% PAE in 65 nm standard CMOS Wang, Tong; Mitomo, Toshiya; Ono, Naoko 2011 IEEE Radio Frequency Integrated Circuits Symposium https://doi.org/10.1109/RFIC.2011.5940686	conference	June 2011
The physical and electrical effects of metal-fill patterning practices for oxide chemical-mechanical polishing processes Stine, B. E.; Boning, D. S.; Chung, J. E. IEEE Transactions on Electron Devices, Vol. 45, Issue 3 https://doi.org/10.1109/16.661228	journal	March 1998

Similar Records

Design of microwave broadband CMOS transmitter and receiver circuits for MIR and ECEI plasma diagnostics

Journal Article · Fri Apr 09 00:00:00 EDT 2021 · Review of Scientific Instruments · OSTI ID:1534344

Chen, Ying; Zhu, Yilun; Yu, Jo-Han; +5 more

Gyro-TWT amplifier development at UCD: (1) 200 kW second-harmonic, (2) wideband and (3) slotted third-harmonic gyro-TWT`s

Conference · Sun Dec 31 00:00:00 EST 1995 · OSTI ID:1534344

Wang, Q S; Leou, K C; Chong, C K; +2 more

System-on-chip approach microwave imaging reflectometer on DIII-D tokamak

Journal Article · Thu Nov 03 00:00:00 EDT 2022 · Review of Scientific Instruments · OSTI ID:1534344

Zhu, Y.; Chen, Y.; Yu, J.-H.; +8 more

Related Subjects

42 ENGINEERING
CMOS
power amplifier
transformer
V-band

Title: An ultra-wideband CMOS PA with dummy filling for reliability

Citation Formats

References (10)

Similar Records

Related Subjects