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Title: Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

Authors:
 [1];  [2];  [3];  [3];  [4];  [5];  [6];  [7];  [7];  [8];  [3];  [9];  [7];  [10]
  1. ICT Materials and Components Basic Research Group, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129 Korea
  2. Department of Materials Science and Engineering, Yonsei University, Seoul 03722 Korea
  3. Graduate School of Energy, Environment, Water, and Sustainability, Korea Advanced Institute of Science and Technology, Daejeon 305-701 Korea
  4. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701 Korea
  5. School of Energy and Chemical Engineering, UNIST, Ulsan 689-798 Korea
  6. Department of Electrical Engineering, Columbia University, New York NY 10027 USA
  7. Department of Chemistry, Columbia University, New York NY 10027 USA
  8. Department of Mechanical Engineering, Columbia University, New York NY 10027 USA
  9. Department of Physics, Harvard University, Cambridge MA 02138 USA
  10. Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk 565-905 Korea
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Re-Defining Photovoltaic Efficiency Through Molecule Scale Control (RPEMSC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1397221
DOE Contract Number:  
SC0001085
Resource Type:
Journal Article
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 5; Related Information: RPEMSC partners with Columbia University (lead); Brookhaven National Laboratory; Purdue University; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English

Citation Formats

Yu, Young-Jun, Lee, Gwan-Hyoung, Choi, Ji Il, Shim, Yoon Su, Lee, Chul-Ho, Kang, Seok Ju, Lee, Sunwoo, Rim, Kwang Taeg, Flynn, George W., Hone, James, Kim, Yong-Hoon, Kim, Philip, Nuckolls, Colin, and Ahn, Seokhoon. Epitaxially Self-Assembled Alkane Layers for Graphene Electronics. United States: N. p., 2016. Web. doi:10.1002/adma.201603925.
Yu, Young-Jun, Lee, Gwan-Hyoung, Choi, Ji Il, Shim, Yoon Su, Lee, Chul-Ho, Kang, Seok Ju, Lee, Sunwoo, Rim, Kwang Taeg, Flynn, George W., Hone, James, Kim, Yong-Hoon, Kim, Philip, Nuckolls, Colin, & Ahn, Seokhoon. Epitaxially Self-Assembled Alkane Layers for Graphene Electronics. United States. doi:10.1002/adma.201603925.
Yu, Young-Jun, Lee, Gwan-Hyoung, Choi, Ji Il, Shim, Yoon Su, Lee, Chul-Ho, Kang, Seok Ju, Lee, Sunwoo, Rim, Kwang Taeg, Flynn, George W., Hone, James, Kim, Yong-Hoon, Kim, Philip, Nuckolls, Colin, and Ahn, Seokhoon. Thu . "Epitaxially Self-Assembled Alkane Layers for Graphene Electronics". United States. doi:10.1002/adma.201603925.
@article{osti_1397221,
title = {Epitaxially Self-Assembled Alkane Layers for Graphene Electronics},
author = {Yu, Young-Jun and Lee, Gwan-Hyoung and Choi, Ji Il and Shim, Yoon Su and Lee, Chul-Ho and Kang, Seok Ju and Lee, Sunwoo and Rim, Kwang Taeg and Flynn, George W. and Hone, James and Kim, Yong-Hoon and Kim, Philip and Nuckolls, Colin and Ahn, Seokhoon},
abstractNote = {},
doi = {10.1002/adma.201603925},
journal = {Advanced Materials},
issn = {0935-9648},
number = 5,
volume = 29,
place = {United States},
year = {2016},
month = {12}
}

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