Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch

Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; Norman, Andrew G.; Guthrey, Harvey L.; Geisz, John F.

doi:10.1016/j.jcrysgro.2016.11.050

Title: Reduced dislocation density in Ga_xIn_1–xP compositionally graded buffer layers through engineered glide plane switch

Abstract

In this work we develop control over dislocation glide dynamics in Ga_xIn_1-xP compositionally graded buffer layers (CGBs) through control of CuPt ordering on the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased glide force. Here we show how this connection between atomic ordering and dislocation glide force can be exploited to control the threading dislocation density (TDD) in Ga_xIn_1-xP CGBs. When ordered Ga_xIn_1-xP is graded from the GaAs lattice constant to InP, the order parameter ..eta.. decreases as x decreases, and dislocation glide switches from one set of glide planes to the other. This glide plane switch (GPS) is accompanied by the nucleation of dislocations on the new glide plane, which typically leads to increased TDD. We develop control of the GPS position within a Ga_xIn_1-xP CGB through manipulation of deposition temperature, surfactant concentration, and strain-grading rate. We demonstrate a two-stage Ga_xIn_1-xP CGB from GaAs to InP with sufficiently low TDD for high performance devices, such as the 4-junction inverted metamorphic multi-junction solar cell, achieved through careful control the GPS position. Here, experimental results are analyzed within the context of amore »« less

Authors:

Schulte, Kevin L. ^[1]; France, Ryan M. ^[1]; McMahon, William E. ^[1]; Norman, Andrew G. ^[1]; Guthrey, Harvey L. ^[1]; Geisz, John F. ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Thu Nov 17 00:00:00 EST 2016

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1348155

Alternate Identifier(s):: OSTI ID: 1396709

Report Number(s):: NREL/JA-5J00-67043
Journal ID: ISSN 0022-0248

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Journal of Crystal Growth

Additional Journal Information:: Journal Volume: 464; Journal Issue: C; Journal ID: ISSN 0022-0248

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; high resolution x-ray diffraction; line defects; metalorganic vapor phase epitaxy; semiconducting indium gallium phosphide; solar cells

Citation Formats


                    Schulte, Kevin L., France, Ryan M., McMahon, William E., Norman, Andrew G., Guthrey, Harvey L., and Geisz, John F. Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch.  United States: N. p., 2016. 
        Web.  doi:10.1016/j.jcrysgro.2016.11.050.

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                    Schulte, Kevin L., France, Ryan M., McMahon, William E., Norman, Andrew G., Guthrey, Harvey L., & Geisz, John F. Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch.  United States.  https://doi.org/10.1016/j.jcrysgro.2016.11.050

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                    Schulte, Kevin L., France, Ryan M., McMahon, William E., Norman, Andrew G., Guthrey, Harvey L., and Geisz, John F. 2016.  
        "Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch".  United States.  https://doi.org/10.1016/j.jcrysgro.2016.11.050.  https://www.osti.gov/servlets/purl/1348155.

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@article{osti_1348155,

  title        = {Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch},

  author       = {Schulte, Kevin L. and France, Ryan M. and McMahon, William E. and Norman, Andrew G. and Guthrey, Harvey L. and Geisz, John F.},

  abstractNote = {In this work we develop control over dislocation glide dynamics in GaxIn1-xP compositionally graded buffer layers (CGBs) through control of CuPt ordering on the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased glide force. Here we show how this connection between atomic ordering and dislocation glide force can be exploited to control the threading dislocation density (TDD) in GaxIn1-xP CGBs. When ordered GaxIn1-xP is graded from the GaAs lattice constant to InP, the order parameter ..eta.. decreases as x decreases, and dislocation glide switches from one set of glide planes to the other. This glide plane switch (GPS) is accompanied by the nucleation of dislocations on the new glide plane, which typically leads to increased TDD. We develop control of the GPS position within a GaxIn1-xP CGB through manipulation of deposition temperature, surfactant concentration, and strain-grading rate. We demonstrate a two-stage GaxIn1-xP CGB from GaAs to InP with sufficiently low TDD for high performance devices, such as the 4-junction inverted metamorphic multi-junction solar cell, achieved through careful control the GPS position. Here, experimental results are analyzed within the context of a model that considers the force balance on dislocations on the two competing glide planes as a function of the degree of ordering.},

  doi          = {10.1016/j.jcrysgro.2016.11.050},

  url          = {https://www.osti.gov/biblio/1348155},
  journal      = {Journal of Crystal Growth},

  issn         = {0022-0248},

  number       = C,

  volume       = 464,

  place        = {United States},

  year         = {Thu Nov 17 00:00:00 EST 2016},

  month        = {Thu Nov 17 00:00:00 EST 2016}

}

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Works referenced in this record:

X-ray diffraction and excitation photoluminescence analysis of ordered GaInP
journal, December 1998

Forrest, R. L.; Golding, T. D.; Moss, S. C.
Physical Review B, Vol. 58, Issue 23
https://doi.org/10.1103/PhysRevB.58.15355

Strong ordering in GaInP alloy semiconductors; Formation mechanism for the ordered phase
journal, January 1988

Suzuki, Tohru; Gomyo, Akiko; Iijima, Sumio
Journal of Crystal Growth, Vol. 93, Issue 1-4
https://doi.org/10.1016/0022-0248(88)90559-3

Ordering-enhanced dislocation glide in III-V alloys
journal, November 2013

McMahon, William E.; Kang, Joongoo; France, Ryan M.
Journal of Applied Physics, Vol. 114, Issue 20
https://doi.org/10.1063/1.4833244

Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP
journal, July 2012

France, R. M.; McMahon, W. E.; Norman, A. G.
Journal of Applied Physics, Vol. 112, Issue 2
https://doi.org/10.1063/1.4739725

Exploiting long-range atomic ordering for the investigation of strain relaxation in lattice-mismatched epitaxy
journal, March 2002

Spiecker, E.; Seibt, M.; Schröter, W.
Applied Surface Science, Vol. 188, Issue 1-2
https://doi.org/10.1016/S0169-4332(01)00731-0

Critical thickness of atomically ordered III-V alloys
journal, October 2015

France, R. M.; McMahon, W. E.; Guthrey, H. L.
Applied Physics Letters, Vol. 107, Issue 15
https://doi.org/10.1063/1.4933092

Nucleation of dislocations in SiGe layers grown on (001)Si
journal, April 1994

Mooney, P. M.; LeGoues, F. K.; Tersoff, J.
Journal of Applied Physics, Vol. 75, Issue 8
https://doi.org/10.1063/1.356992

Crystallographic tilting of heteroepitaxial layers
journal, September 1991

Ayers, J. E.; Ghandhi, S. K.; Schowalter, L. J.
Journal of Crystal Growth, Vol. 113, Issue 3-4
https://doi.org/10.1016/0022-0248(91)90077-I

Crystallographic tilting in lattice-mismatched heteroepitaxy: A Dodson–Tsao relaxation approach
journal, January 1996

Riesz, Ferenc
Journal of Applied Physics, Vol. 79, Issue 8
https://doi.org/10.1063/1.361774

Lattice-Mismatched 0.7-eV GaInAs Solar Cells Grown on GaAs Using GaInP Compositionally Graded Buffers
journal, January 2014

France, Ryan M.; Garcia, Ivan; McMahon, William E.
IEEE Journal of Photovoltaics, Vol. 4, Issue 1
https://doi.org/10.1109/JPHOTOV.2013.2281724

In situ measurement of CuPt alloy ordering using strain anisotropy
journal, February 2014

France, Ryan M.; McMahon, William E.; Kang, Joongoo
Journal of Applied Physics, Vol. 115, Issue 5
https://doi.org/10.1063/1.4863821

In situ stress measurement for MOVPE growth of high efficiency lattice-mismatched solar cells
journal, April 2008

Geisz, J. F.; Levander, A. X.; Norman, A. G.
Journal of Crystal Growth, Vol. 310, Issue 7-9
https://doi.org/10.1016/j.jcrysgro.2007.11.048

Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1−y metamorphic buffer layers on InP substrates
journal, January 2011

Kirch, J.; Kim, T. W.; Konen, J.
Journal of Crystal Growth, Vol. 315, Issue 1
https://doi.org/10.1016/j.jcrysgro.2010.09.054

The use of a surfactant (Sb) to induce triple period ordering in GaInP
journal, March 2000

Fetzer, C. M.; Lee, R. T.; Shurtleff, J. K.
Applied Physics Letters, Vol. 76, Issue 11, p. 1440-1442
https://doi.org/10.1063/1.126057

Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga _0.5 In _0.5 P Grown by Metalorganic Vapor Phase Epitaxy
journal, August 1989

Gomyo, Akiko; Hotta, Hitoshi; Hino, Isao
Japanese Journal of Applied Physics, Vol. 28, Issue Part 2, No. 8
https://doi.org/10.1143/JJAP.28.L1330

The effect of selenium doping on the optical and structural properties of Ga0.5ln0.5P
journal, August 1990

Kurtz, Sarah R.; Olson, J. M.; GoraL, J. P.
Journal of Electronic Materials, Vol. 19, Issue 8
https://doi.org/10.1007/BF02651392

Dislocations and strain relief in compositionally graded layers
journal, February 1993

Tersoff, J.
Applied Physics Letters, Vol. 62, Issue 7
https://doi.org/10.1063/1.108842

Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
journal, April 1996

Beanland, R.; Dunstan, D. J.; Goodhew, P. J.
Advances in Physics, Vol. 45, Issue 2
https://doi.org/10.1080/00018739600101477

Quadruple-Junction Inverted Metamorphic Concentrator Devices
journal, January 2015

France, Ryan M.; Geisz, John F.; Garcia, Ivan
IEEE Journal of Photovoltaics, Vol. 5, Issue 1
https://doi.org/10.1109/JPHOTOV.2014.2364132

Dislocation dynamics in relaxed graded composition semiconductors
journal, December 1999

Fitzgerald, E. A.; Kim, A. Y.; Currie, M. T.
Materials Science and Engineering: B, Vol. 67, Issue 1-2
https://doi.org/10.1016/S0921-5107(99)00209-3

Works referencing / citing this record:

Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction
journal, January 2018

Shida, K.; Takeuchi, S.; Tohei, T.
Journal of Applied Physics, Vol. 123, Issue 16
https://doi.org/10.1063/1.5011291

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Title: Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch

Abstract

Citation Formats

X-ray diffraction and excitation photoluminescence analysis of ordered GaInP journal, December 1998

Strong ordering in GaInP alloy semiconductors; Formation mechanism for the ordered phase journal, January 1988

Ordering-enhanced dislocation glide in III-V alloys journal, November 2013

Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP journal, July 2012

Exploiting long-range atomic ordering for the investigation of strain relaxation in lattice-mismatched epitaxy journal, March 2002

Critical thickness of atomically ordered III-V alloys journal, October 2015

Nucleation of dislocations in SiGe layers grown on (001)Si journal, April 1994

Crystallographic tilting of heteroepitaxial layers journal, September 1991

Crystallographic tilting in lattice-mismatched heteroepitaxy: A Dodson–Tsao relaxation approach journal, January 1996

Lattice-Mismatched 0.7-eV GaInAs Solar Cells Grown on GaAs Using GaInP Compositionally Graded Buffers journal, January 2014

In situ measurement of CuPt alloy ordering using strain anisotropy journal, February 2014

In situ stress measurement for MOVPE growth of high efficiency lattice-mismatched solar cells journal, April 2008

Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1−y metamorphic buffer layers on InP substrates journal, January 2011

The use of a surfactant (Sb) to induce triple period ordering in GaInP journal, March 2000

Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga 0.5 In 0.5 P Grown by Metalorganic Vapor Phase Epitaxy journal, August 1989

The effect of selenium doping on the optical and structural properties of Ga0.5ln0.5P journal, August 1990

Dislocations and strain relief in compositionally graded layers journal, February 1993

Plastic relaxation and relaxed buffer layers for semiconductor epitaxy journal, April 1996

Quadruple-Junction Inverted Metamorphic Concentrator Devices journal, January 2015

Dislocation dynamics in relaxed graded composition semiconductors journal, December 1999

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Title: Reduced dislocation density in Ga_xIn_1–xP compositionally graded buffer layers through engineered glide plane switch

X-ray diffraction and excitation photoluminescence analysis of ordered GaInP
journal, December 1998

Strong ordering in GaInP alloy semiconductors; Formation mechanism for the ordered phase
journal, January 1988

Ordering-enhanced dislocation glide in III-V alloys
journal, November 2013

Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP
journal, July 2012

Exploiting long-range atomic ordering for the investigation of strain relaxation in lattice-mismatched epitaxy
journal, March 2002

Critical thickness of atomically ordered III-V alloys
journal, October 2015

Nucleation of dislocations in SiGe layers grown on (001)Si
journal, April 1994

Crystallographic tilting of heteroepitaxial layers
journal, September 1991

Crystallographic tilting in lattice-mismatched heteroepitaxy: A Dodson–Tsao relaxation approach
journal, January 1996

Lattice-Mismatched 0.7-eV GaInAs Solar Cells Grown on GaAs Using GaInP Compositionally Graded Buffers
journal, January 2014

In situ measurement of CuPt alloy ordering using strain anisotropy
journal, February 2014

In situ stress measurement for MOVPE growth of high efficiency lattice-mismatched solar cells
journal, April 2008

Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1−y metamorphic buffer layers on InP substrates
journal, January 2011

The use of a surfactant (Sb) to induce triple period ordering in GaInP
journal, March 2000

Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga _0.5 In _0.5 P Grown by Metalorganic Vapor Phase Epitaxy
journal, August 1989

The effect of selenium doping on the optical and structural properties of Ga0.5ln0.5P
journal, August 1990

Dislocations and strain relief in compositionally graded layers
journal, February 1993

Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
journal, April 1996

Quadruple-Junction Inverted Metamorphic Concentrator Devices
journal, January 2015

Dislocation dynamics in relaxed graded composition semiconductors
journal, December 1999

Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction
journal, January 2018