skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: An axial temperature profile curvature criterion for the engineering of convex crystal growth interfaces in Bridgman systems

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1396682
Grant/Contract Number:
NA0002514 and DE-AC02-05CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 468; Journal Issue: C; Related Information: CHORUS Timestamp: 2017-10-04 15:19:55; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Peterson, Jeffrey H., and Derby, Jeffrey J.. An axial temperature profile curvature criterion for the engineering of convex crystal growth interfaces in Bridgman systems. Netherlands: N. p., 2017. Web. doi:10.1016/j.jcrysgro.2016.09.064.
Peterson, Jeffrey H., & Derby, Jeffrey J.. An axial temperature profile curvature criterion for the engineering of convex crystal growth interfaces in Bridgman systems. Netherlands. doi:10.1016/j.jcrysgro.2016.09.064.
Peterson, Jeffrey H., and Derby, Jeffrey J.. 2017. "An axial temperature profile curvature criterion for the engineering of convex crystal growth interfaces in Bridgman systems". Netherlands. doi:10.1016/j.jcrysgro.2016.09.064.
@article{osti_1396682,
title = {An axial temperature profile curvature criterion for the engineering of convex crystal growth interfaces in Bridgman systems},
author = {Peterson, Jeffrey H. and Derby, Jeffrey J.},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2016.09.064},
journal = {Journal of Crystal Growth},
number = C,
volume = 468,
place = {Netherlands},
year = 2017,
month = 6
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on June 1, 2018
Publisher's Accepted Manuscript

Save / Share:
  • The crystal growth of succinonitrile (SCN) in a horizontal Bridgman apparatus is studied through a three-dimensional numerical simulation. The governing equations considered include the steady state Navier-Stokes and the thermal energy equations. The temperature boundary conditions imposed at the outer surface of the glass ampoule are taken from experimental measurements. To model the phase change in SCN, the authors use the effective specific heat formulation of the enthalpy method and treat the SCN as a generalized Newtonian fluid. The authors solve the numerical model using the segregated solution approach provided by a commercial finite element code, FIDAP. The numerical resultsmore » are compared with data from experiments, and very good agreement has been achieved. The advantages of applying the segregated solution approach in large-scale three-dimensional (3-D) computations are shown through detailed comparisons of efficiency and memory requirements between the segregated and the conventional fully coupled solution approaches. The significant savings of memory requirements by the segregated approach make it possible to solve large-scale 3-D problems on work stations.« less
  • We describe a modified Bridgman growth technique to produce single crystals of the strongly correlated electron material URu 2Si 2 and its nonmagnetic analogue ThRu 2Si 2. Bulk thermodynamic and electrical transport measurements show that the properties of crystals produced in this way are comparable to those previously synthesized using the Czochralski or conventional molten metal flux growth techniques. For the specimens reported here, we find residual resistivity ratios RRR = ρ 300K / ρ 0 as large as 116 and 187 for URu 2Si 2 and ThRu 2Si 2, respectively.
  • The germanide Yb{sub 2}Ru{sub 3}Ge{sub 4} was synthesized from the elements using the Bridgman crystal growth technique. The monoclinic Hf{sub 2}Ru{sub 3}Si{sub 4} type structure was investigated by X-ray powder and single crystal diffraction: C2/c, Z=8, a=1993.0(3) pm, b=550.69(8) pm, c=1388.0(2) pm, {beta}=128.383(9){sup o}, wR {sub 2}=0.0569, 2047 F {sup 2} values, and 84 variables. Yb{sub 2}Ru{sub 3}Ge{sub 4} contains two crystallographically independent ytterbium sites with coordination numbers of 18 and 17 for Yb1 and Yb2, respectively. Each ytterbium atom has three ytterbium neighbors at Yb-Yb distances ranging from 345 to 368 pm. The shortest interatomic distances occur for themore » Ru-Ge contacts. The three crystallographically independent ruthenium sites have between five and six germanium neighbors in distorted trigonal bipyramidal (Ru1Ge{sub 5}) or octahedral (Ru2Ge{sub 6} and Ru3Ge{sub 6}) coordination at Ru-Ge distances ranging from 245 to 279 pm. The Ru2 atoms form zig-zag chains running parallel to the b-axis at Ru2-Ru2 of 284 pm. The RuGe{sub 5} and RuGe{sub 6} units are condensed via common edges and faces leading to a complex three-dimensional [Ru{sub 3}Ge{sub 4}] network. - Graphical abstract: Condensation of the Ru1Ge{sub 5}, Ru2Ge{sub 6}, and Ru3Ge{sub 6} units in the structure of Yb{sub 2}Ru{sub 3}Ge{sub 4}.« less
  • By Vertical Bridgman method, several Cd{sub 0.8}Mn{sub 0.2}Te (CdMnTe) ingots were grown. The structure and crystallinity of the ingots were evaluated by X-ray powder diffraction and double-crystal rocking curve measurement and etch pits density (EPD) measurement. The results showed a pure cubic zinc blende structure throughout the ingots with the full width at half maximum (FWHM) of 40-70 arcsec and EPD of (6-8) x 10{sup 4} cm{sup -2}, indicating a high crystalline perfection. The Mn concentration distribution along the axial and radial direction of the ingots was measured by inductively coupled plasma atomic emission spectrometer (ICP-AES). The segregation coefficient k{submore » eff} for Mn along the axis of the ingots is determined to be 0.95, and the radial variation of Mn concentration is within 0.002. Current-voltage (I-V) measurement reveals that sputtered Au film can form good ohmic contact to CdMnTe wafer and all the wafers of the as-grown crystals have the resistivity within (1-4) x 10{sup 6} {omega} cm. IR transmission measurement in the wave number region from 4000 to 1000 cm{sup -1} exhibits that the IR transmittance of CdMnTe wafers is 50-55%, which is close to the theoretical value.« less
  • Highlights: {yields} Growth of bulk single crystal of 8-hydroxyquinoline (8-HQ) by vertical Bridgman technique for the first time. {yields} The crystalline perfection is reasonably good. {yields} The photoluminescence spectrum shows that the material is suitable for blue light emission. -- Abstract: Single crystal of organic nonlinear optical material, 8-hydroxyquinoline (8-HQ) of dimension 52 mm (length) x 12 mm (dia.) was grown from melt using vertical Bridgman technique. The crystal system of the material was confirmed by powder X-ray diffraction analysis. The crystalline perfection of the grown crystal was examined by high-resolution X-ray diffraction study. Low angular spread around 400'' ofmore » the diffraction curve and the low full width half maximum values show that the crystalline perfection is reasonably good. The recorded photoluminescence spectrum shows that the material is suitable for blue light emission. Optical transmittance for the UV and visible region was measured and mechanical strength was estimated from Vicker's microhardness test along the growth face of the grown crystal.« less