skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Clathrate thermoelectrics

Authors:
; ORCiD logo; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1396616
Grant/Contract Number:
SC0008931
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Materials Science and Engineering. R, Reports
Additional Journal Information:
Journal Volume: 108; Journal Issue: C; Related Information: CHORUS Timestamp: 2017-10-04 10:16:28; Journal ID: ISSN 0927-796X
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Dolyniuk, Juli-Anna, Owens-Baird, Bryan, Wang, Jian, Zaikina, Julia V., and Kovnir, Kirill. Clathrate thermoelectrics. Netherlands: N. p., 2016. Web. doi:10.1016/j.mser.2016.08.001.
Dolyniuk, Juli-Anna, Owens-Baird, Bryan, Wang, Jian, Zaikina, Julia V., & Kovnir, Kirill. Clathrate thermoelectrics. Netherlands. doi:10.1016/j.mser.2016.08.001.
Dolyniuk, Juli-Anna, Owens-Baird, Bryan, Wang, Jian, Zaikina, Julia V., and Kovnir, Kirill. Sat . "Clathrate thermoelectrics". Netherlands. doi:10.1016/j.mser.2016.08.001.
@article{osti_1396616,
title = {Clathrate thermoelectrics},
author = {Dolyniuk, Juli-Anna and Owens-Baird, Bryan and Wang, Jian and Zaikina, Julia V. and Kovnir, Kirill},
abstractNote = {},
doi = {10.1016/j.mser.2016.08.001},
journal = {Materials Science and Engineering. R, Reports},
number = C,
volume = 108,
place = {Netherlands},
year = {Sat Oct 01 00:00:00 EDT 2016},
month = {Sat Oct 01 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1016/j.mser.2016.08.001

Citation Metrics:
Cited by: 21works
Citation information provided by
Web of Science

Save / Share:
  • Theoretical calculations are presented for the figure of merit Z in thermoelectrics. The maximum values of Z are obtained in semiconductors which are doped so that the chemical potential is near the band edge. The highest Z is related to the B parameter of Chasmar and Stratton (J. Electron. Control 7, 52 (1959)).
  • Certain of the materials with strong electron-phonon interaction is studied. These materials are semiconductors with polaron type hopping conduction mechanism; materials with incommensurate structure and natural regular system of energy barriers; semiconductors and semimetals with mobility edge. It is shown that in some cases mentioned types of materials can be rather perspective as thermoelectrics and they can be the base for a new generation of thermoelectrics. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
  • Whatever the methods for preparation of thin film thermoelectrics, a subsequent annealing is inevitable to reduce defects and residual stresses introduced during the fabrication processes and also to control the uniform carrier concentration of the film. The diffusion-induced atomic redistribution and broadening of {ital p}/{ital n} junction region are expected to affect thermoelectric properties of thin film modules thereafter. In the present studies, it has been intended to investigate the diffusion at {ital p}/{ital n} junctions of thermoelectric thin films and to relate it with the property changes. For this, thermoelectric thin film junctions were prepared by the flash evaporationmore » technique. {ital P}- and {ital n}-type materials used were Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and Bi{sub 2}Te{sub 2.4}Se{sub 0.6}, respectively. Aluminum thin layer employed as a diffusion barrier between {ital p}- and {ital n}-type films of the junction was found to be an effective barrier by showing a negligible diffusion into both type films. Thermoelectric properties of {ital p}/{ital n} couples incorporated with aluminum barrier layer were accordingly retained without any deterioration, when compared with the ``virgin`` junctions. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.« less
  • Thermoelectricity, or the Seebeck effect, is the physical phenomenon used in thermocouples for temperature measurement. Over the past 2-3 years there has been renewed interest in the field for use in electronic refrigeration or power generation. This article summarizes information on new materials and new concepts for materials with some possibilities of higher performance than existing materials. Thermoelectric energy conversion utilizes the heat generated when an electric current is passed through a thermoelectric material to provide a temperature gradient. Advantages of thermoelectric solid state energy conversion are compactness, quietness, and localized heating or cooling. Possible automotive uses range from powermore » generation to seat coolers. One group of materials receiving a lot of attention is the skutterudite materials. 8 refs., 1 fig.« less