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Title: Design and Fabrication of Ta filled microcavites in the delay paths of SAW devices for improved power transfer

Abstract

The authors report the design and fabrication of a surface acoustic wave (SAW) device with improved power transfer due to modification of its delay path. Typically, SAW delay-line devices suffer from relatively high insertion loss (IL) (similar to 10-30 dB). Our approach is to incorporate an array of microcavities, having square cross-sectional area (lambda/2 x lambda/2) and filled with tantalum, within the delay path to maximize acoustic confinement to the surface and reduce IL. To determine the effectiveness of the cavities without expending too many resources and to explain trends found in actual devices, a finite element model of a SAW device with tantalum filled cavities having various depths was utilized. For each depth simulated, IL was decreased compared to a standard SAW device. Microcavities 2.5 mu m deep filled with tantalum showed the best performance (Delta IL = 17.93 dB). To validate simulated results, the authors fabricated a SAW device on ST 90 degrees-X quartz with microcavities etched into its delay path using deep reactive ion etching and filled with tantalum. Measurement of fabricated devices showed inclusion of tantalum filled microcavities increased power transfer compared to a device without cavities. (C) 2015 American Vacuum Society.

Authors:
; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science - Office of Basic Energy Sciences - Scientific User Facilities Division
OSTI Identifier:
1396171
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of vacuum science & technology. B, Microelectronics and nanometer structures; Journal Volume: 33; Journal Issue: 2
Country of Publication:
United States
Language:
English

Citation Formats

Richardson, Mandek, Sankaranarayanan, S. K. R. S., and Bhethanabotla, V. R. Design and Fabrication of Ta filled microcavites in the delay paths of SAW devices for improved power transfer. United States: N. p., 2015. Web. doi:10.1116/1.4906515.
Richardson, Mandek, Sankaranarayanan, S. K. R. S., & Bhethanabotla, V. R. Design and Fabrication of Ta filled microcavites in the delay paths of SAW devices for improved power transfer. United States. doi:10.1116/1.4906515.
Richardson, Mandek, Sankaranarayanan, S. K. R. S., and Bhethanabotla, V. R. Sun . "Design and Fabrication of Ta filled microcavites in the delay paths of SAW devices for improved power transfer". United States. doi:10.1116/1.4906515.
@article{osti_1396171,
title = {Design and Fabrication of Ta filled microcavites in the delay paths of SAW devices for improved power transfer},
author = {Richardson, Mandek and Sankaranarayanan, S. K. R. S. and Bhethanabotla, V. R.},
abstractNote = {The authors report the design and fabrication of a surface acoustic wave (SAW) device with improved power transfer due to modification of its delay path. Typically, SAW delay-line devices suffer from relatively high insertion loss (IL) (similar to 10-30 dB). Our approach is to incorporate an array of microcavities, having square cross-sectional area (lambda/2 x lambda/2) and filled with tantalum, within the delay path to maximize acoustic confinement to the surface and reduce IL. To determine the effectiveness of the cavities without expending too many resources and to explain trends found in actual devices, a finite element model of a SAW device with tantalum filled cavities having various depths was utilized. For each depth simulated, IL was decreased compared to a standard SAW device. Microcavities 2.5 mu m deep filled with tantalum showed the best performance (Delta IL = 17.93 dB). To validate simulated results, the authors fabricated a SAW device on ST 90 degrees-X quartz with microcavities etched into its delay path using deep reactive ion etching and filled with tantalum. Measurement of fabricated devices showed inclusion of tantalum filled microcavities increased power transfer compared to a device without cavities. (C) 2015 American Vacuum Society.},
doi = {10.1116/1.4906515},
journal = {Journal of vacuum science & technology. B, Microelectronics and nanometer structures},
number = 2,
volume = 33,
place = {United States},
year = {Sun Mar 01 00:00:00 EST 2015},
month = {Sun Mar 01 00:00:00 EST 2015}
}