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Title: Epitaxial SrRuO 3 /SrTiO 3 (100) analyzed using x-ray photoelectron spectroscopy

 [1];  [2];  [1]
  1. Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, 600 S. Mathews Avenue, Urbana, Illinois 61801
  2. Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Avenue, Urbana, Illinois 61801
Publication Date:
Sponsoring Org.:
OSTI Identifier:
Grant/Contract Number:
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Surface Science Spectra
Additional Journal Information:
Journal Volume: 24; Journal Issue: 2; Related Information: CHORUS Timestamp: 2018-02-15 01:55:43; Journal ID: ISSN 1055-5269
American Vacuum Society
Country of Publication:
United States

Citation Formats

Barlaz, D. Eitan, Haasch, Richard T., and Seebauer, Edmund G. Epitaxial SrRuO 3 /SrTiO 3 (100) analyzed using x-ray photoelectron spectroscopy. United States: N. p., 2017. Web. doi:10.1116/1.4999599.
Barlaz, D. Eitan, Haasch, Richard T., & Seebauer, Edmund G. Epitaxial SrRuO 3 /SrTiO 3 (100) analyzed using x-ray photoelectron spectroscopy. United States. doi:10.1116/1.4999599.
Barlaz, D. Eitan, Haasch, Richard T., and Seebauer, Edmund G. 2017. "Epitaxial SrRuO 3 /SrTiO 3 (100) analyzed using x-ray photoelectron spectroscopy". United States. doi:10.1116/1.4999599.
title = {Epitaxial SrRuO 3 /SrTiO 3 (100) analyzed using x-ray photoelectron spectroscopy},
author = {Barlaz, D. Eitan and Haasch, Richard T. and Seebauer, Edmund G.},
abstractNote = {},
doi = {10.1116/1.4999599},
journal = {Surface Science Spectra},
number = 2,
volume = 24,
place = {United States},
year = 2017,
month =

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 2, 2018
Publisher's Accepted Manuscript

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  • Aberration corrected scanning transmission electron microscopy is used to directly observe atom columns in an epitaxial BaTiO{sub 3} thin film deposited on a 3.6 nm-thick SrRuO{sub 3} electrode layer above an SrTiO{sub 3} (001) substrate. Compositional gradients across the heterointerfaces were examined using electron energy-loss spectroscopy techniques. It was found that a small amount of Ba and Ti had diffused into the SrRuO{sub 3} layer, and that this layer contained a non-negligible concentration of oxygen vacancies. Such point defects are expected to degrade the electrode’s electronic conductivity drastically, resulting in a much longer screening length. This may explain the discrepancymore » between experimental measurements and theoretical estimates of the ferroelectric critical thickness of a BaTiO{sub 3} ferroelectric barrier sandwiched between metallic SrRuO{sub 3} electrodes, since theoretical calculations generally assume ideal (stoichiometric) perovskite SrRuO{sub 3}.« less
  • We investigated infrared-active phonons of CaTiO3, SrTiO3, BaTiO3, and Ba0.5Sr0.5TiO3 thin films, and a (BaTiO3)5/(SrTiO3)5 artificial superlattice by a Fourier transform infrared spectrometer with a grazing angle (48{sup o}) incident reflectance method. The longitudinal phonon energies of the thin films were different from those of the bulk material due to the lattice strain of the substrate. The Ba0.5Sr0.5TiO3 thin film and (BaTiO3)5/(SrTiO3)5 superlattice showed different phonon modes due to structural discrepancies, even though their chemical compositions are similar. The Ba0.5Sr0.5TiO3 thin film showed a single phonon energy lying between the phonon energies of BaTiO3 and SrTiO3 thin films, while themore » (BaTiO3)5/(SrTiO3)5 superlattice well preserved the characteristic phonon modes of BaTiO3 and SrTiO3 thin films.« less
  • A Cl{sub 2}-HBr-O{sub 2}/Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate ({approx}600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO{sub x} passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl{sub 2}-based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface ismore » estimated to be {approx}1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl{sub 2}-based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl{sub 2}-based ICP etching for the recovery of the InP material.« less
  • We report the effect of both miscut angle ({alpha}) and miscut direction ({beta}) of vicinal substrates on the epitaxial growth and domain structure of isotropic metallic oxide SrRuO{sub 3} thin films. The thin films have been grown on vicinal (001) SrTiO{sub 3} substrates with {alpha} up to 4.1{degree} and {beta} up to 37{degree} away from the in-plane [010] axis. Single-crystal epitaxial (110){ital {sup o}} SrRuO{sub 3} thin films were obtained on vicinal SrTiO{sub 3} substrates with a large miscut angle ({alpha}=1.9{degree}, 2.1{degree}, and 4.1{degree}) and miscut direction close to the [010] axis. Decreasing the substrate miscut angle or aligning themore » miscut direction close to the [110] axis ({beta}=45{degree}) resulted in an increase of 90{degree} domains in the plane. The films grown on vicinal substrates displayed a significant improvement in crystalline quality and in-plane epitaxial alignment as compared to the films grown on exact (001) SrTiO{sub 3} substrates. Atomic force microscopy revealed that the growth mechanism changed from two-dimensional nucleation to step flow growth as the miscut angle increased. {copyright} {ital 1997 American Institute of Physics.}« less
  • Highly conductive metallic oxide thin films of SrRuO{sub 3} with single crystalline quality have been grown on (001) SrTiO{sub 3} by using pulsed laser deposition. The films have a [00l] orientation with an in-plane relationship of [110]{sub SrRuO{sub 3}}//[100]{sub SrTiO{sub 3}}. They have excellent metallic behavior with room temperature resistivity of {approximately}310 {mu}{Omega}cm and a residual resistance ratio of about 7 at 4.2 K, the largest reported to date. A clear ferromagnetic transition at {approximately}147 K was detected by resistivity and magnetic measurements. However, the transition becomes blurred as the density-of-point defects increases in the films following a 400 keVmore » proton irradiation with an accumulative dose up to {approximately}6.0{times}10{sup 16} ions/cm{sup 2}. {copyright} {ital 1997 American Institute of Physics.}« less