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Title: Separation of electron and hole dynamics in the semimetal LaSb

Abstract

We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov–de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first-principles calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropies, we quantitatively describe the orbital magnetoresistance, including its angle dependence.We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strong magnetic-field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover themore » origin of XMR in multiband materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials.« less

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division; National Science Foundation (NSF); National Natural Science Foundation of China (NNSFC)
OSTI Identifier:
1395895
DOE Contract Number:
AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review B; Journal Volume: 96; Journal Issue: 12
Country of Publication:
United States
Language:
English

Citation Formats

Han, F., Xu, J., Botana, A. S., Xiao, Z. L., Wang, Y. L., Yang, W. G., Chung, D. Y., Kanatzidis, M. G., Norman, M. R., Crabtree, G. W., and Kwok, W. K. Separation of electron and hole dynamics in the semimetal LaSb. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.125112.
Han, F., Xu, J., Botana, A. S., Xiao, Z. L., Wang, Y. L., Yang, W. G., Chung, D. Y., Kanatzidis, M. G., Norman, M. R., Crabtree, G. W., & Kwok, W. K. Separation of electron and hole dynamics in the semimetal LaSb. United States. doi:10.1103/PhysRevB.96.125112.
Han, F., Xu, J., Botana, A. S., Xiao, Z. L., Wang, Y. L., Yang, W. G., Chung, D. Y., Kanatzidis, M. G., Norman, M. R., Crabtree, G. W., and Kwok, W. K. 2017. "Separation of electron and hole dynamics in the semimetal LaSb". United States. doi:10.1103/PhysRevB.96.125112.
@article{osti_1395895,
title = {Separation of electron and hole dynamics in the semimetal LaSb},
author = {Han, F. and Xu, J. and Botana, A. S. and Xiao, Z. L. and Wang, Y. L. and Yang, W. G. and Chung, D. Y. and Kanatzidis, M. G. and Norman, M. R. and Crabtree, G. W. and Kwok, W. K.},
abstractNote = {We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov–de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first-principles calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropies, we quantitatively describe the orbital magnetoresistance, including its angle dependence.We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strong magnetic-field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover the origin of XMR in multiband materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials.},
doi = {10.1103/PhysRevB.96.125112},
journal = {Physical Review B},
number = 12,
volume = 96,
place = {United States},
year = 2017,
month = 9
}