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Title: Novel High Energy Density Dielectrics for Scalable Capacitors.

Abstract

Abstract not provided.

Authors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Electricity Delivery and Energy Reliability (OE), Power Systems Engineering Research and Development (R&D) (OE-10)
OSTI Identifier:
1395743
Report Number(s):
SAND2016-9468C
647655
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the DOE OE Peer Review held September 25-28, 2016 in Washington, DC.
Country of Publication:
United States
Language:
English

Citation Formats

Brown-Shaklee, Harlan James. Novel High Energy Density Dielectrics for Scalable Capacitors.. United States: N. p., 2016. Web.
Brown-Shaklee, Harlan James. Novel High Energy Density Dielectrics for Scalable Capacitors.. United States.
Brown-Shaklee, Harlan James. 2016. "Novel High Energy Density Dielectrics for Scalable Capacitors.". United States. doi:. https://www.osti.gov/servlets/purl/1395743.
@article{osti_1395743,
title = {Novel High Energy Density Dielectrics for Scalable Capacitors.},
author = {Brown-Shaklee, Harlan James},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 9
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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  • Abstract not provided.
  • Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors andmore » shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics.« less