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Title: Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells

Abstract

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1395454
Report Number(s):
NREL/CP-5J00-68419
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 13th International Conference on Concentrator Photovoltaic Systems (CPV-13), 1-3 May 2017, Ottawa, Canada
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; semiconductors; band gap; electric currents; tunnel junctions

Citation Formats

Geisz, John F, Steiner, Myles A, Jain, Nikhil, Schulte, Kevin L, France, Ryan M, McMahon, William E, Perl, Emmett, Horowitz, Kelsey A, and Friedman, Daniel J. Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells. United States: N. p., 2017. Web. doi:10.1063/1.5001425.
Geisz, John F, Steiner, Myles A, Jain, Nikhil, Schulte, Kevin L, France, Ryan M, McMahon, William E, Perl, Emmett, Horowitz, Kelsey A, & Friedman, Daniel J. Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells. United States. doi:10.1063/1.5001425.
Geisz, John F, Steiner, Myles A, Jain, Nikhil, Schulte, Kevin L, France, Ryan M, McMahon, William E, Perl, Emmett, Horowitz, Kelsey A, and Friedman, Daniel J. Wed . "Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells". United States. doi:10.1063/1.5001425.
@article{osti_1395454,
title = {Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells},
author = {Geisz, John F and Steiner, Myles A and Jain, Nikhil and Schulte, Kevin L and France, Ryan M and McMahon, William E and Perl, Emmett and Horowitz, Kelsey A and Friedman, Daniel J},
abstractNote = {Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.},
doi = {10.1063/1.5001425},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Sep 06 00:00:00 EDT 2017},
month = {Wed Sep 06 00:00:00 EDT 2017}
}

Conference:
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