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Title: Novel Multiferroic Phases and Phenomena in Epitaxial (111) BiFeO 3 Films

ORCiD logo [1];  [2];  [1]
  1. Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville AR 72701 USA
  2. Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville AR 72701 USA, Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433 China
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
Grant/Contract Number:
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 12; Related Information: CHORUS Timestamp: 2017-12-11 07:26:16; Journal ID: ISSN 2199-160X
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United States

Citation Formats

Xu, Changsong, Xiang, Hongjun, and Bellaiche, Laurent. Novel Multiferroic Phases and Phenomena in Epitaxial (111) BiFeO 3 Films. United States: N. p., 2017. Web. doi:10.1002/aelm.201700332.
Xu, Changsong, Xiang, Hongjun, & Bellaiche, Laurent. Novel Multiferroic Phases and Phenomena in Epitaxial (111) BiFeO 3 Films. United States. doi:10.1002/aelm.201700332.
Xu, Changsong, Xiang, Hongjun, and Bellaiche, Laurent. 2017. "Novel Multiferroic Phases and Phenomena in Epitaxial (111) BiFeO 3 Films". United States. doi:10.1002/aelm.201700332.
title = {Novel Multiferroic Phases and Phenomena in Epitaxial (111) BiFeO 3 Films},
author = {Xu, Changsong and Xiang, Hongjun and Bellaiche, Laurent},
abstractNote = {},
doi = {10.1002/aelm.201700332},
journal = {Advanced Electronic Materials},
number = 12,
volume = 3,
place = {United States},
year = 2017,
month = 9

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on September 28, 2018
Publisher's Accepted Manuscript

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  • Multiferroic BiFeO{sub 3} epitaxial thin films are prepared using pulsed laser deposition method on single crystal SrTiO{sub 3}(001) substrates. The prepared films are characterized by [001] growth and the in-plane {phi}-scans haven shown that the films are characterized by ''cube-on-cube'' epitaxial growth. The photoelectron spectroscopy results confirm the presence of Fe{sup 3+} only. Better magnetic properties are observed in the case of less thickness BiFeO{sub 3} film as compared to higher thickness, which could be due to the in-plane strain effect.
  • Multiferroic BiFeO 3 exhibits excellent magnetoelectric coupling critical for magnetic information processing with minimal power consumption. Thus, the degenerate nature of the easy spin axis in the (111) plane presents roadblocks for real world applications. Here, we explore the stabilization and switchability of the weak ferromagnetic moments under applied epitaxial strain using a combination of first-principles calculations and group-theoretic analyses. We demonstrate that the antiferromagnetic moment vector can be stabilized along unique crystallographic directions ([110] and [-110]) under compressive and tensile strains. A direct coupling between the anisotropic antiferrodistortive rotations and Dzyaloshinskii-Moria interactions drives the stabilization of weak ferromagnetism. Furthermore,more » energetically competing C- and G-type magnetic orderings are observed at high compressive strains, suggesting that it may be possible to switch the weak ferromagnetism on and off under application of strain. These findings emphasize the importance of strain and antiferrodistortive rotations as routes to enhancing induced weak ferromagnetism in multiferroic oxides.« less
  • A cosputtering method was used to deposit BiFeO{sub 3} thin films on Pt/Ti/SiO{sub 2}/Si substrates. It was confirmed as a polycrystalline film with a tetragonal crystal structure in the annealed state. Both Fe{sup 2+} and Fe{sup 3+} ions were found to coexist in the film. The leakage current density is as low as 10{sup -3} A/cm{sup 2} at 120 kV/cm. This sputtered film shows multiferroic properties exhibiting a saturated ferroelectric loop with a large remnant polarization of 37 {mu}C/cm{sup 2} and a saturated ferromagnetic loop with saturation magnetization of 21 emu/cm{sup 3} at room temperature.
  • Lead-free bilayered multiferroic thin films consisting of BiFeO{sub 3} (BFO) and CoFe{sub 2}O{sub 4} (CFO) layers with different thicknesses were grown on SrRuO{sub 3}-coated Pt/TiO{sub 2}/SiO{sub 2}/Si substrates by radio frequency sputtering. The effects of constituent layer thicknesses on the ferroelectric and magnetic behavior have been studied. The physical behaviors are shown to strongly depend on the thicknesses of the constituent layers. BFO (220 nm)/CFO (30 nm) bilayered thin film demonstrated much improved ferroelectric and ferromagnetic behavior (2P{sub r}=144.2 muC/cm{sup 2}, 2E{sub c}=778.0 kV/cm, M{sub s}=61.2 emu/cm{sup 3}, and H{sub c}=200.8 Oe) as compared to those of the single layermore » BFO thin film. The dielectric behavior and conductivity of BFO (220 nm)/CFO (30 nm) bilayered thin film were investigated as a function of both temperature (in the range of 294-534 K) and frequency (in the range of 10{sup -1}-10{sup 6} Hz), where an activation energy of approx1.11 eV for dielectric relaxation was demonstrated. From the conductivity behavior, an activation energies of approx0.98 eV was derived for dc conductivity are, implying that oxygen vacancies are involved in the conduction of the BFO (220 nm)/CFO (30 nm) bilayered film.« less
  • The effect of Bi{sub 0.90}La{sub 0.10}Fe{sub 0.90}Zn{sub 0.10}O{sub 3} (BLFZO) thicknesses on the microstructure and multiferroic properties of BiFeO{sub 3} (BFO) thin films was investigated, and all bilayered thin films were grown on Pt-coated silicon substrates without any buffer layers by a radio frequency sputtering. A (110) orientation is dominant in all the bilayers, and two grain growth modes are identified in these bilayers by using an atomic force microscope, where different grain growth modes significantly affect their leakage behavior. The dielectric constant ({epsilon}{sub r}) of bilayers gradually increases, and magnetic properties were deteriorated with the addition of BLFZO withmore » a higher {epsilon}{sub r} and a weaker magnetic behavior. An enhanced ferroelectric behavior of 2P{sub r} {approx} 116.2 {mu}C/cm{sup 2} and 2E{sub c} {approx} 524 kV/cm could be observed in the BFO/BLFZO bilayered thin film with 80 nm BLFZO layer owing to a higher orientation degree of (110) and an interface coupling together with a lower leakage current density. As a result, electrical properties of BFO could be tailored by modifying the thicknesses of BLFZO.« less