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Title: Theory of Thermal Relaxation of Electrons in Semiconductors

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1395195
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 119 Journal Issue: 13; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Sadasivam, Sridhar, Chan, Maria K. Y., and Darancet, Pierre. Theory of Thermal Relaxation of Electrons in Semiconductors. United States: N. p., 2017. Web. doi:10.1103/PhysRevLett.119.136602.
Sadasivam, Sridhar, Chan, Maria K. Y., & Darancet, Pierre. Theory of Thermal Relaxation of Electrons in Semiconductors. United States. doi:10.1103/PhysRevLett.119.136602.
Sadasivam, Sridhar, Chan, Maria K. Y., and Darancet, Pierre. Wed . "Theory of Thermal Relaxation of Electrons in Semiconductors". United States. doi:10.1103/PhysRevLett.119.136602.
@article{osti_1395195,
title = {Theory of Thermal Relaxation of Electrons in Semiconductors},
author = {Sadasivam, Sridhar and Chan, Maria K. Y. and Darancet, Pierre},
abstractNote = {},
doi = {10.1103/PhysRevLett.119.136602},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 13,
volume = 119,
place = {United States},
year = {2017},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevLett.119.136602

Citation Metrics:
Cited by: 9 works
Citation information provided by
Web of Science

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Works referenced in this record:

Electrons in lattice fields
journal, July 1954


First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?
journal, July 2013