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Title: Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics

Abstract

Hybrid perovskite photovoltaic devices heavily rely on the use of organic (rather than inorganic) charge-transport layers on top of a perovskite absorber layer because of difficulties in depositing inorganic materials on top of these fragile absorber layers. However, in comparison to the unstable and expensive organic transport materials, inorganic charge-transport layers provide improved charge transport and stability to the device architecture. Here, we report photovoltaic devices using all-inorganic transport layers in a planar p-i-n junction device configuration using formamidinium lead tribromide (FAPbBr 3) as an absorber. Efficient planar devices are obtained through atomic layer deposition of nickel oxide and sputtered zinc oxide as hole- and electron-transport materials, respectively. Using only inorganic charge-transport layers resulted in planar FAPbBr 3 devices with a power conversion efficiency of 6.75% at an open-circuit voltage of 1.23 V. In conclusion, the transition of planar FAPbBr 3 devices making from all-organic towards all-inorganic charge-transport layers is studied in detail.

Authors:
 [1];  [1];  [1];  [2];  [1]
  1. Indian Institute of Technology Bombay, Mumbai (India)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1395106
Alternate Identifier(s):
OSTI ID: 1378391
Report Number(s):
NREL/JA-5K00-70190
Journal ID: ISSN 2194-4288
Grant/Contract Number:  
AC36-08GO28308; IUSSTF/JCERDC-SERIIUS/2012
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Energy Technology
Additional Journal Information:
Journal Volume: 5; Journal Issue: 10; Journal ID: ISSN 2194-4288
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; atomic layer deposition; inorganic transport layer; nickel oxide; perovskite solar cells; wide band gap

Citation Formats

Subbiah, Anand S., Mahuli, Neha, Agarwal, Sumanshu, van Hest, Maikel F. A. M., and Sarkar, Shaibal K. Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics. United States: N. p., 2017. Web. doi:10.1002/ente.201700361.
Subbiah, Anand S., Mahuli, Neha, Agarwal, Sumanshu, van Hest, Maikel F. A. M., & Sarkar, Shaibal K. Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics. United States. doi:10.1002/ente.201700361.
Subbiah, Anand S., Mahuli, Neha, Agarwal, Sumanshu, van Hest, Maikel F. A. M., and Sarkar, Shaibal K. Fri . "Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics". United States. doi:10.1002/ente.201700361. https://www.osti.gov/servlets/purl/1395106.
@article{osti_1395106,
title = {Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics},
author = {Subbiah, Anand S. and Mahuli, Neha and Agarwal, Sumanshu and van Hest, Maikel F. A. M. and Sarkar, Shaibal K.},
abstractNote = {Hybrid perovskite photovoltaic devices heavily rely on the use of organic (rather than inorganic) charge-transport layers on top of a perovskite absorber layer because of difficulties in depositing inorganic materials on top of these fragile absorber layers. However, in comparison to the unstable and expensive organic transport materials, inorganic charge-transport layers provide improved charge transport and stability to the device architecture. Here, we report photovoltaic devices using all-inorganic transport layers in a planar p-i-n junction device configuration using formamidinium lead tribromide (FAPbBr3) as an absorber. Efficient planar devices are obtained through atomic layer deposition of nickel oxide and sputtered zinc oxide as hole- and electron-transport materials, respectively. Using only inorganic charge-transport layers resulted in planar FAPbBr3 devices with a power conversion efficiency of 6.75% at an open-circuit voltage of 1.23 V. In conclusion, the transition of planar FAPbBr3 devices making from all-organic towards all-inorganic charge-transport layers is studied in detail.},
doi = {10.1002/ente.201700361},
journal = {Energy Technology},
issn = {2194-4288},
number = 10,
volume = 5,
place = {United States},
year = {2017},
month = {7}
}

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