Generation of high-density biskyrmions by electric current
- Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics, Inst. of Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences
- Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics, Inst. of Physics
- Univ. of Science and Technology, Beijing (China). School of Materials Science and Engineering
- Univ. of Texas, Arlington, TX (United States). Dept. of Physics
- Ames Lab., Ames, IA (United States). Materials Sciences and Engineering
Much interest has been focused on the manipulation of magnetic skyrmions, including the generation, annihilation, and motion behaviors, for potential applications in spintronics. We experimentally demonstrate that a high-density Bloch-type biskyrmion lattice in MnNiGa can be generated by applying electric current. It is revealed that the density of biskyrmions can be remarkably increased by increasing the electric current, in contrast to the scattered biskyrmions induced by a magnetic field alone. Furthermore, the transition from the ferromagnetic state to the stripe domain structure can be terminated by the electric current, leading to the biskyrmions dominated residual domain pattern. These biskyrmions in such residual domain structure are extremely stable at zero magnetic and electric fields and can further evolve into the high-density biskyrmion lattice over a temperature range from 100 to 330 K. Finally, our experimental findings open up a new pathway for the generation of skyrmion lattice by electric current manipulation.
- Research Organization:
- Ames Lab., Ames, IA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-07CH11358
- OSTI ID:
- 1394805
- Report Number(s):
- IS-J-9431; PII: 34
- Journal Information:
- npj Quantum Materials, Vol. 2, Issue 1; ISSN 2397-4648
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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