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Title: Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1394713
Grant/Contract Number:  
SC0008933
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 11; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Trodahl, H. J., Natali, F., Ruck, B. J., and Lambrecht, W. R. L. Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.115309.
Trodahl, H. J., Natali, F., Ruck, B. J., & Lambrecht, W. R. L. Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor. United States. doi:10.1103/PhysRevB.96.115309.
Trodahl, H. J., Natali, F., Ruck, B. J., and Lambrecht, W. R. L. Mon . "Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor". United States. doi:10.1103/PhysRevB.96.115309.
@article{osti_1394713,
title = {Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor},
author = {Trodahl, H. J. and Natali, F. and Ruck, B. J. and Lambrecht, W. R. L.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.115309},
journal = {Physical Review B},
issn = {2469-9950},
number = 11,
volume = 96,
place = {United States},
year = {2017},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.96.115309

Citation Metrics:
Cited by: 1 work
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Works referenced in this record:

GdN (111) heteroepitaxy on GaN (0001) by N2 plasma and NH3 molecular beam epitaxy
journal, February 2009