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Title: High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films

Authors:
ORCiD logo [1];  [2];  [1];  [1];  [3];  [3];  [1];  [1]; ORCiD logo [1]
  1. Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269, USA
  2. Department of Electrical and Electronics Engineering, Eskisehir Osmangazi University, Eskisehir 26480, Turkey
  3. IBM Watson Research Center, Yorktown Heights, New York 10598, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1394681
Grant/Contract Number:
SC005038
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 12; Related Information: CHORUS Timestamp: 2018-02-14 14:22:03; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Adnane, L., Dirisaglik, F., Cywar, A., Cil, K., Zhu, Y., Lam, C., Anwar, A. F. M., Gokirmak, A., and Silva, H.. High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films. United States: N. p., 2017. Web. doi:10.1063/1.4996218.
Adnane, L., Dirisaglik, F., Cywar, A., Cil, K., Zhu, Y., Lam, C., Anwar, A. F. M., Gokirmak, A., & Silva, H.. High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films. United States. doi:10.1063/1.4996218.
Adnane, L., Dirisaglik, F., Cywar, A., Cil, K., Zhu, Y., Lam, C., Anwar, A. F. M., Gokirmak, A., and Silva, H.. Thu . "High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films". United States. doi:10.1063/1.4996218.
@article{osti_1394681,
title = {High temperature electrical resistivity and Seebeck coefficient of Ge 2 Sb 2 Te 5 thin films},
author = {Adnane, L. and Dirisaglik, F. and Cywar, A. and Cil, K. and Zhu, Y. and Lam, C. and Anwar, A. F. M. and Gokirmak, A. and Silva, H.},
abstractNote = {},
doi = {10.1063/1.4996218},
journal = {Journal of Applied Physics},
number = 12,
volume = 122,
place = {United States},
year = {Thu Sep 28 00:00:00 EDT 2017},
month = {Thu Sep 28 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on September 25, 2018
Publisher's Accepted Manuscript

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