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Title: Ohmic contacts on n-type β-Ga 2O 3 using AZO/Ti/Au

Abstract

AZO interlayers between n-Ga 2O 3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga 2O 3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10 -5 Ω-cm 2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga 2O 3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Authors:
ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [1];  [2];  [3]; ORCiD logo [4]
  1. Univ. of Florida, Gainesville, FL (United States)
  2. Dankook Univ., Yongin (Korea)
  3. Japan and Novel Crystal Technology, Inc., Saitama (Japan)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1394628
Alternate Identifier(s):
OSTI ID: 1390352
Grant/Contract Number:
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 7; Journal Issue: 9; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, and Kravchenko, Ivan I. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au. United States: N. p., 2017. Web. doi:10.1063/1.4996172.
Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, & Kravchenko, Ivan I. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au. United States. doi:10.1063/1.4996172.
Carey, IV, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, and Kravchenko, Ivan I. Thu . "Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au". United States. doi:10.1063/1.4996172. https://www.osti.gov/servlets/purl/1394628.
@article{osti_1394628,
title = {Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au},
author = {Carey, IV, Patrick H. and Yang, Jiancheng and Ren, F. and Hays, David C. and Pearton, S. J. and Jang, Soohwan and Kuramata, Akito and Kravchenko, Ivan I.},
abstractNote = {AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.},
doi = {10.1063/1.4996172},
journal = {AIP Advances},
number = 9,
volume = 7,
place = {United States},
year = {Thu Sep 14 00:00:00 EDT 2017},
month = {Thu Sep 14 00:00:00 EDT 2017}
}

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