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Title: In-cascade ionization effects on defect production in 3C silicon carbide

Abstract

Understanding how energy deposited in electronic and atomic subsystems may affect defect dynamics is a long-standing fundamental challenge in materials research. The coupling of displacement cascades and in-cascade ionization-induced annealing are investigated in silicon carbide (SiC). A delayed damage accumulation under ion irradiation is revealed with a linear dependence as a function of both increasing ionization and increasing ratio of electronic to nuclear energy deposition. An in-cascade healing mechanism is suggested with a low threshold value of electronic energy loss (~1.0 keV nm-1). The in-cascade ionization effects must be considered in predicting radiation performance of SiC.

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [2]
  1. Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA
  2. Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1394275
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Materials Research Letters
Additional Journal Information:
Journal Volume: 5; Journal Issue: 7; Journal ID: ISSN 2166-3831
Publisher:
Taylor and Francis
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Xue, Haizhou, Zhang, Yanwen, and Weber, William J. In-cascade ionization effects on defect production in 3C silicon carbide. United States: N. p., 2017. Web. doi:10.1080/21663831.2017.1334241.
Xue, Haizhou, Zhang, Yanwen, & Weber, William J. In-cascade ionization effects on defect production in 3C silicon carbide. United States. doi:10.1080/21663831.2017.1334241.
Xue, Haizhou, Zhang, Yanwen, and Weber, William J. Mon . "In-cascade ionization effects on defect production in 3C silicon carbide". United States. doi:10.1080/21663831.2017.1334241.
@article{osti_1394275,
title = {In-cascade ionization effects on defect production in 3C silicon carbide},
author = {Xue, Haizhou and Zhang, Yanwen and Weber, William J.},
abstractNote = {Understanding how energy deposited in electronic and atomic subsystems may affect defect dynamics is a long-standing fundamental challenge in materials research. The coupling of displacement cascades and in-cascade ionization-induced annealing are investigated in silicon carbide (SiC). A delayed damage accumulation under ion irradiation is revealed with a linear dependence as a function of both increasing ionization and increasing ratio of electronic to nuclear energy deposition. An in-cascade healing mechanism is suggested with a low threshold value of electronic energy loss (~1.0 keV nm-1). The in-cascade ionization effects must be considered in predicting radiation performance of SiC.},
doi = {10.1080/21663831.2017.1334241},
journal = {Materials Research Letters},
issn = {2166-3831},
number = 7,
volume = 5,
place = {United States},
year = {2017},
month = {6}
}

Works referenced in this record:

Neutron displacement damage cross sections for SiC
journal, February 1993


The temperature dependence of ion-beam-induced amorphization in β-SiC
journal, December 1995

  • Weber, W. J.; Wang, L. M.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 106, Issue 1-4
  • DOI: 10.1016/0168-583X(95)00722-9

Ionization-induced annealing of pre-existing defects in silicon carbide
journal, August 2015

  • Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms9049

Combined effects of nuclear and electronic energy losses in solids irradiated with a dual-ion beam
journal, April 2013

  • Thomé, Lionel; Debelle, Aurélien; Garrido, Frédérico
  • Applied Physics Letters, Vol. 102, Issue 14
  • DOI: 10.1063/1.4801518

New ion beam materials laboratory for materials modification and irradiation effects research
journal, November 2014

  • Zhang, Y.; Crespillo, M. L.; Xue, H.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 338
  • DOI: 10.1016/j.nimb.2014.07.028

Silicon carbide in contention
journal, August 2004


Handbook of SiC properties for fuel performance modeling
journal, September 2007


Young's Modulus of Various Refractory Materials as a Function of Temperature
journal, May 1959


The role of electronic energy loss in ion beam modification of materials
journal, February 2015

  • Weber, William J.; Duffy, Dorothy M.; Thomé, Lionel
  • Current Opinion in Solid State and Materials Science, Vol. 19, Issue 1
  • DOI: 10.1016/j.cossms.2014.09.003

Atomic scale simulation of defect production in irradiated 3C-SiC
journal, September 2001

  • Devanathan, R.; Weber, W. J.; Gao, F.
  • Journal of Applied Physics, Vol. 90, Issue 5
  • DOI: 10.1063/1.1389523

Silicon Carbide as a Platform for Power Electronics
journal, June 2009


Irradiation-induced amorphization in β-SiC
journal, March 1998


Electromechanical Computing at 500°C with Silicon Carbide
journal, September 2010


Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
journal, October 1996


Response of strontium titanate to ion and electron irradiation
journal, May 2009


Mechanical Properties of Polycrystalline beta-Sic
journal, November 1969


Behavior of nuclear materials irradiated with a dual ion beam
journal, May 2014

  • Thomé, Lionel; Velişa, Gihan; Debelle, Aurélien
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 326
  • DOI: 10.1016/j.nimb.2013.09.054

Volume swelling of amorphous SiC during ion-beam irradiation
journal, July 2005


Structure and properties of ion-beam-modified (6H) silicon carbide
journal, September 1998


Influence of irradiation spectrum and implanted ions on the amorphization of ceramics
journal, August 1996

  • Zinkle, S. J.; Snead, L. L.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 116, Issue 1-4
  • DOI: 10.1016/0168-583X(96)00016-X

Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
journal, January 1994

  • Chow, T. P.; Tyagi, R.
  • IEEE Transactions on Electron Devices, Vol. 41, Issue 8
  • DOI: 10.1109/16.297751

Ion-beam induced damage and annealing behaviour in SiC
journal, May 1998

  • Wendler, E.; Heft, A.; Wesch, W.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 141, Issue 1-4
  • DOI: 10.1016/S0168-583X(98)00083-4

Review of dynamic recovery effects on ion irradiation damage in ionic-covalent materials
journal, April 2012

  • Weber, William J.; Zhang, Yanwen; Wang, Lumin
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 277
  • DOI: 10.1016/j.nimb.2011.12.043

Energy loss of highly charged ions on an aluminum surface
journal, July 1996

  • Hatke, N.; Hoffknecht, A.; Hustedt, S.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 115, Issue 1-4
  • DOI: 10.1016/0168-583X(95)01534-5

Molecular dynamics simulations of swift heavy ion induced defect recovery in SiC
journal, February 2013


The irradiation-induced crystalline-to-amorphous phase transition in α-SiC
journal, August 1996

  • Weber, W. J.; Wang, L. M.; Yu, N.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 116, Issue 1-4
  • DOI: 10.1016/0168-583X(96)00066-3

Effects of dynamic recovery on amorphization kinetics in 6H-SiC
journal, June 2008

  • Weber, William J.; Wang, Lumin; Zhang, Yanwen
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 266, Issue 12-13
  • DOI: 10.1016/j.nimb.2008.03.119

Analysis of grain boundary sinks and interstitial diffusion in neutron-irradiated SiC
journal, February 2011


Electron loss and capture cross sections of 800 KeV amu−1 H and He species in carbon foils
journal, March 1980


Silicon carbide high-power devices
journal, January 1996

  • Weitzel, C. E.; Palmour, J. W.; Carter, C. H.
  • IEEE Transactions on Electron Devices, Vol. 43, Issue 10
  • DOI: 10.1109/16.536819

Multiaxial channeling study of disorder accumulation and recovery in gold-irradiated 6 H SiC
journal, September 2001