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Title: In-cascade ionization effects on defect production in 3C silicon carbide

Abstract

Understanding how energy deposited in electronic and atomic subsystems may affect defect dynamics is a long-standing fundamental challenge in materials research. The coupling of displacement cascades and in-cascade ionization-induced annealing are investigated in silicon carbide (SiC). A delayed damage accumulation under ion irradiation is revealed with a linear dependence as a function of both increasing ionization and increasing ratio of electronic to nuclear energy deposition. An in-cascade healing mechanism is suggested with a low threshold value of electronic energy loss (~1.0 keV nm-1). The in-cascade ionization effects must be considered in predicting radiation performance of SiC.

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [2]
  1. Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA
  2. Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1394275
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Letters; Journal Volume: 5; Journal Issue: 7
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Xue, Haizhou, Zhang, Yanwen, and Weber, William J. In-cascade ionization effects on defect production in 3C silicon carbide. United States: N. p., 2017. Web. doi:10.1080/21663831.2017.1334241.
Xue, Haizhou, Zhang, Yanwen, & Weber, William J. In-cascade ionization effects on defect production in 3C silicon carbide. United States. doi:10.1080/21663831.2017.1334241.
Xue, Haizhou, Zhang, Yanwen, and Weber, William J. Mon . "In-cascade ionization effects on defect production in 3C silicon carbide". United States. doi:10.1080/21663831.2017.1334241.
@article{osti_1394275,
title = {In-cascade ionization effects on defect production in 3C silicon carbide},
author = {Xue, Haizhou and Zhang, Yanwen and Weber, William J.},
abstractNote = {Understanding how energy deposited in electronic and atomic subsystems may affect defect dynamics is a long-standing fundamental challenge in materials research. The coupling of displacement cascades and in-cascade ionization-induced annealing are investigated in silicon carbide (SiC). A delayed damage accumulation under ion irradiation is revealed with a linear dependence as a function of both increasing ionization and increasing ratio of electronic to nuclear energy deposition. An in-cascade healing mechanism is suggested with a low threshold value of electronic energy loss (~1.0 keV nm-1). The in-cascade ionization effects must be considered in predicting radiation performance of SiC.},
doi = {10.1080/21663831.2017.1334241},
journal = {Materials Research Letters},
number = 7,
volume = 5,
place = {United States},
year = {Mon Jun 05 00:00:00 EDT 2017},
month = {Mon Jun 05 00:00:00 EDT 2017}
}