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Title: Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs.

Abstract

Abstract not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1394056
Report Number(s):
SAND2016-9153C
Journal ID: ISSN 0018--9499; 647438
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the RADECS 2016 held September 19-23, 2016 in Bremen, Germany.
Country of Publication:
United States
Language:
English

Citation Formats

McLain, Michael Lee, Hugh Barnaby, Garrett Schlenvogt, and Kiraneswar Mathuseenu. Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs.. United States: N. p., 2016. Web. doi:10.1109/TNS.2017.2705118.
McLain, Michael Lee, Hugh Barnaby, Garrett Schlenvogt, & Kiraneswar Mathuseenu. Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs.. United States. doi:10.1109/TNS.2017.2705118.
McLain, Michael Lee, Hugh Barnaby, Garrett Schlenvogt, and Kiraneswar Mathuseenu. 2016. "Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs.". United States. doi:10.1109/TNS.2017.2705118. https://www.osti.gov/servlets/purl/1394056.
@article{osti_1394056,
title = {Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs.},
author = {McLain, Michael Lee and Hugh Barnaby and Garrett Schlenvogt and Kiraneswar Mathuseenu},
abstractNote = {Abstract not provided.},
doi = {10.1109/TNS.2017.2705118},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 9
}

Conference:
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  • Abstract not provided.
  • A significant contribution of fringing field effect on radiation-induced leakage current in oxide isolation structure and damage nonuniformity in MOSFET was demonstrated using analytical expressions for electrical field. A two dimensional analytical model describing electrical field distribution in oxide isolation and MOSFET structures was elaborated to provide the dynamics of positive oxide trapped charge build-up process. The leakage current at the bottom of the recessed field oxide calculation was performed using oxide trapped charge density profile obtained through charge build-up process simulated applying electrical field model to changing conditions during irradiation process. Calculations are presented for leakage current versus dosemore » dependencies for different structure dimensions and irradiation conditions; leakage current versus voltage shift of buried layer during irradiation and P[sup +]-channel stop region doping level; and I-V characteristics of parasitic transistor. Experimental data concerning damage nonuniformity are discussed together with calculated data for electrical field pattern and nonuniformity length in MOSFETs.« less
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