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Title: Spectral Filtering using Active Metasurfaces Compatible with Narrow Bandgap III-V Infrared Detectors.

Abstract

Abstract not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1394044
Report Number(s):
SAND2016-9122C
Journal ID: ISSN 1094--4087; 647414
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Journal Volume: 24; Journal Issue: 19; Conference: Proposed for presentation at the CINT user meeting 2016 held September 19-20, 2016 in Santa Fe, NM.
Country of Publication:
United States
Language:
English

Citation Formats

Wolf, Omri, campione, salvatore, Kim, Jin K., and Brener, Igal. Spectral Filtering using Active Metasurfaces Compatible with Narrow Bandgap III-V Infrared Detectors.. United States: N. p., 2016. Web. doi:10.1364/OE.24.021512.
Wolf, Omri, campione, salvatore, Kim, Jin K., & Brener, Igal. Spectral Filtering using Active Metasurfaces Compatible with Narrow Bandgap III-V Infrared Detectors.. United States. doi:10.1364/OE.24.021512.
Wolf, Omri, campione, salvatore, Kim, Jin K., and Brener, Igal. Thu . "Spectral Filtering using Active Metasurfaces Compatible with Narrow Bandgap III-V Infrared Detectors.". United States. doi:10.1364/OE.24.021512. https://www.osti.gov/servlets/purl/1394044.
@article{osti_1394044,
title = {Spectral Filtering using Active Metasurfaces Compatible with Narrow Bandgap III-V Infrared Detectors.},
author = {Wolf, Omri and campione, salvatore and Kim, Jin K. and Brener, Igal},
abstractNote = {Abstract not provided.},
doi = {10.1364/OE.24.021512},
journal = {},
number = 19,
volume = 24,
place = {United States},
year = {Thu Sep 01 00:00:00 EDT 2016},
month = {Thu Sep 01 00:00:00 EDT 2016}
}

Conference:
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  • Narrow-bandgap semiconductors such as alloys of InAsAlSb and their heterostructures are considered promising candidates for next generation infrared photodetectors and devices. The prospect of actively tuning the spectral responsivity of these detectors at the pixel level is very appealing. In principle, this could be achieved with a tunable metasurface fabricated monolithically on the detector pixel. Here, we present first steps towards that goal using a complementary metasurface strongly coupled to an epsilon-near-zero (ENZ) mode operating in the long-wave region of the infrared spectrum. We fabricate such a coupled system using the same epitaxial layers used for infrared pixels in amore » focal plane array and demonstrate the existence of ENZ modes in high mobility layers of InAsSb. We confirm that the coupling strength between the ENZ mode and the metasurface depends on the ENZ layer thickness and demonstrate a transmission modulation on the order of 25%. Lastly, we further show numerically the expected tunable spectral behavior of such coupled system under reverse and forward bias, which could be used in future electrically tunable detectors.« less
  • Abstract not provided.
  • Polycrystalline thin films of CrSi{sub 2}, LaSi{sub 2}, and ReSi{sub 2} were grown on silicon substrates. Normal incidence optical transmittance and reflectance measurements were made as a function of wavelength. It was demonstrated that LaSi{sub 2} is a metallic conductor, but that CrSi{sub 2} and ReSi{sub 2} are, in fact, narrow bandgap semiconductors. For CrSi{sub 2}, the complex index of refraction was determined by computer analysis of the optical data. From the imaginary part, the optical absorption coefficient was determined as a function of photon energy. It was shown that CrSi{sub 2} possesses an indirect forbidden energy gap of slightlymore » less than 0.31 eV, and yet it is a very strong absorber of light above the absorption edge. On the other hand, the ReSi{sub 2} films exhibit an absorption edge in the vicinity of 0.2 eV. Measurements of the thermal activation energy of resistivity for ReSi{sub 2} indicate a bandgap of 0.18 eV. It is concluded that the semiconducting silicides merit further investigation for development as new silicon-compatible infrared detector materials.« less