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Title: High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si

Authors:
 [1];  [2];  [3];  [2];  [1];  [3];  [4];  [4]
  1. Institute for Energy Efficiency, University of California Santa Barbara, California 93106, USA
  2. Materials Department, University of California Santa Barbara, California 93106, USA
  3. Department of Electrical and Computer Engineering, University of California Santa Barbara, California 93106, USA
  4. Institute for Energy Efficiency, University of California Santa Barbara, California 93106, USA, Materials Department, University of California Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California Santa Barbara, California 93106, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1393694
Grant/Contract Number:
AR0000672
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 12; Related Information: CHORUS Timestamp: 2018-02-14 22:13:29; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., and Bowers, John E. High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si. United States: N. p., 2017. Web. doi:10.1063/1.4993226.
Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., & Bowers, John E. High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si. United States. doi:10.1063/1.4993226.
Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., and Bowers, John E. 2017. "High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si". United States. doi:10.1063/1.4993226.
@article{osti_1393694,
title = {High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si},
author = {Jung, Daehwan and Norman, Justin and Kennedy, M. J. and Shang, Chen and Shin, Bongki and Wan, Yating and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {},
doi = {10.1063/1.4993226},
journal = {Applied Physics Letters},
number = 12,
volume = 111,
place = {United States},
year = 2017,
month = 9
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on September 21, 2018
Publisher's Accepted Manuscript

Citation Metrics:
Cited by: 1work
Citation information provided by
Web of Science

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  • Graded-index separate-confinement heterostructure InGaAs/AlGaAs single quantum well diode lasers emitting at 1.02 {mu}m have been fabricated from structures grown by organometallic vapor phase epitaxy. Under pulsed operation, threshold current densities as low as 65 A/cm{sup 2}, the lowest reported for InGaAs/AsGaAs lasers, have been obtained for a cavity length {ital L} of 1500 {mu}m. Differential quantum efficiencies as high as 90% have been obtained for {ital L}=300 {mu}m. Output powers as high as 1.6 W per facet and power conversion efficiencies as high as 47% have been obtained for continuous operation of uncoated lasers with {ital L}=1000 {mu}m.
  • The temperature dependence of the optical gain in GRIN-SCH SQW lasers with different quantum-well widths has been investigated. The observed dependence of the kink temperature on cavity loss and quantum-well width, and the differential quantum efficiency minimum at the kink temperature, have been analyzed in terms of the temperature variation of the gain spectra and peak gain curves. Dependences of the characteristic temperature T/sub 0/ on the quantum-well width, cavity loss, and temperature range are discussed in terms of the variation of the peak modal gain versus current relation with temperature and quantum-well width.
  • The temperature dependences of the emission characteristics of semiconductor lasers based on asymmetric separate-confinement heterostructures with a broadened waveguide fabricated by metalorganic chemical vapor deposition (radiation wavelength {lambda} = 900-920 nm) have been investigated. It is found that an increase in the energy depth and number of quantum wells (QWs) in the active region makes it possible to increase the temperature stability of the threshold current density and the differential quantum efficiency of semiconductor lasers on the basis of these structures. A temperature stability of threshold current density with a characteristic parameter T{sub 0} = 290 K has been obtainedmore » in lasers based on a heterostructure with four QWs. It is experimentally shown that the laser parameters are stabilized due to the decrease in the threshold current density and threshold carrier density in the QWs of the active region. It is also demonstrated that, when the carrier concentration in these QWs reaches a certain value, the temperature stability of the threshold current density and differential quantum efficiency sharply decreases.« less
  • Laser threshold current density and emission wavelength were investigated for broad area single quantum well double heterostructure (SQW DH) Ga/sub 1-x/Al/sub x/As lasers grown by metalorganic chemical vapor deposition (MOCVD) under pulsed operation at room temperature. The shortest lasing emission wavelength was 7065 A. At that wavelength, the threshold current density was 1 kA/cm/sup 2/ for a Fabry--Perot diode of 500-..mu..m cavity length and the external differential quantum efficiency was 48%. These values are significantly better than those previously reported for Ga/sub 1-x/Al/sub x/As DH lasers operating under similar conditions at the same wavelengths. We attribute the improved performance inmore » part to the quantum size effect (active layer thickness 400-- 600 A).« less