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Title: High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si

Authors:
 [1];  [2];  [3];  [2];  [1];  [3];  [4];  [4]
  1. Institute for Energy Efficiency, University of California Santa Barbara, California 93106, USA
  2. Materials Department, University of California Santa Barbara, California 93106, USA
  3. Department of Electrical and Computer Engineering, University of California Santa Barbara, California 93106, USA
  4. Institute for Energy Efficiency, University of California Santa Barbara, California 93106, USA, Materials Department, University of California Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California Santa Barbara, California 93106, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1393694
Grant/Contract Number:
AR0000672
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 12; Related Information: CHORUS Timestamp: 2018-02-14 22:13:29; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., and Bowers, John E. High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si. United States: N. p., 2017. Web. doi:10.1063/1.4993226.
Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., & Bowers, John E. High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si. United States. doi:10.1063/1.4993226.
Jung, Daehwan, Norman, Justin, Kennedy, M. J., Shang, Chen, Shin, Bongki, Wan, Yating, Gossard, Arthur C., and Bowers, John E. Mon . "High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si". United States. doi:10.1063/1.4993226.
@article{osti_1393694,
title = {High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si},
author = {Jung, Daehwan and Norman, Justin and Kennedy, M. J. and Shang, Chen and Shin, Bongki and Wan, Yating and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {},
doi = {10.1063/1.4993226},
journal = {Applied Physics Letters},
number = 12,
volume = 111,
place = {United States},
year = {Mon Sep 18 00:00:00 EDT 2017},
month = {Mon Sep 18 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on September 21, 2018
Publisher's Accepted Manuscript

Citation Metrics:
Cited by: 1work
Citation information provided by
Web of Science

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