Distinct electronic structure for the extreme magnetoresistance in YSb

He, Junfeng; Zhang, Chaofan; Ghimire, Nirmal J.; Liang, Tian; Jia, Chunjing; Jiang, Juan; Tang, Shujie; Chen, Sudi; He, Yu; Mo, S. -K.; Hwang, C. C.; Hashimoto, M.; Lu, D. H.; Moritz, B.; Devereaux, T. P.; Chen, Y. L.; Mitchell, J. F.; Shen, Z. -X.

doi:10.1103/PhysRevLett.117.267201

Title: Distinct electronic structure for the extreme magnetoresistance in YSb

Journal Article · Fri Dec 23 00:00:00 EST 2016 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.117.267201· OSTI ID:1349067

He, Junfeng ^[1]; Zhang, Chaofan ^[1]; Ghimire, Nirmal J. ^[2]; Liang, Tian ^[1]; Jia, Chunjing ^[1]; Jiang, Juan ^[3]; Tang, Shujie ^[1]; Chen, Sudi ^[1]; He, Yu ^[1]; Mo, S. -K. ^[4]; Hwang, C. C. ^[5]; Hashimoto, M. ^[6]; Lu, D. H. ^[6]; Moritz, B. ^[1]; Devereaux, T. P. ^[1]; Chen, Y. L. ^[7]; Mitchell, J. F. ^[2]; Shen, Z. -X. ^[1]

SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences (SIMES); Stanford Univ., CA (United States). Dept. of Physics. Dept. of Applied Physics. Geballe Lab. for Advanced Materials
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source; ShanghaiTech Univ. (China). School of Physical Science and Technology; Pohang Univ. of Science and Technology (Korea, Republic of). Pohang Accelerator Lab.
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source
Pohang Univ. of Science and Technology (Korea, Republic of). Pohang Accelerator Lab.
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource
ShanghaiTech Univ. (China). School of Physical Science and Technology; Univ. of Oxford (United Kingdom). Physics Dept.

An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Argonne National Laboratory (ANL), Argonne, IL (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Pohang Univ. of Science and Technology (Korea, Republic of)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Research Foundation of Korea (NRF)

Contributing Organization:: Stanford Univ., CA (United States); ShanghaiTech Univ. (China); Univ. of Oxford (United Kingdom)

Grant/Contract Number:: AC02-05CH11231; AC02-76SF00515; 2011-0030787

OSTI ID:: 1349067

Alternate ID(s):: OSTI ID: 1337447; OSTI ID: 1339626; OSTI ID: 1393598

Journal Information:: Physical Review Letters, Vol. 117, Issue 26; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 70 works

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