skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

Abstract

We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. Finally, this work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Univ. of Wyoming, Laramie, WY (United States). Dept. of Physics and Astronomy
Publication Date:
Research Org.:
Univ. of Wyoming, Laramie, WY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Science (SC), Biological and Environmental Research (BER) (SC-23)
OSTI Identifier:
1393430
Grant/Contract Number:  
FG02-10ER46728; SC0004981
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sapkota, Keshab R., Chen, Weimin, Maloney, F. Scott, Poudyal, Uma, and Wang, Wenyong. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires. United States: N. p., 2016. Web. doi:10.1038/srep35036.
Sapkota, Keshab R., Chen, Weimin, Maloney, F. Scott, Poudyal, Uma, & Wang, Wenyong. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires. United States. doi:10.1038/srep35036.
Sapkota, Keshab R., Chen, Weimin, Maloney, F. Scott, Poudyal, Uma, and Wang, Wenyong. Fri . "Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires". United States. doi:10.1038/srep35036. https://www.osti.gov/servlets/purl/1393430.
@article{osti_1393430,
title = {Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires},
author = {Sapkota, Keshab R. and Chen, Weimin and Maloney, F. Scott and Poudyal, Uma and Wang, Wenyong},
abstractNote = {We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. Finally, this work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.},
doi = {10.1038/srep35036},
journal = {Scientific Reports},
issn = {2045-2322},
number = 1,
volume = 6,
place = {United States},
year = {2016},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Magnetoresistance in Degenerate CdS: Localized Magnetic Moments
journal, November 1970


Fundamentals of zinc oxide as a semiconductor
journal, October 2009


Spintronics: A Spin-Based Electronics Vision for the Future
journal, November 2001

  • Wolf, S. A.; Awschalom, D. D.; Buhrman, R. A.
  • Science, Vol. 294, Issue 5546, p. 1488-1495
  • DOI: 10.1126/science.1065389

Bound magnetic polaron hopping and giant magnetoresistance in magnetic semiconductors and nanostructures
journal, July 2000


A ten-year perspective on dilute magnetic semiconductors and oxides
journal, November 2010


Coherent spin manipulation without magnetic fields in strained semiconductors
journal, January 2004


Disordered electronic systems
journal, April 1985


Variable-range hopping of spin polarons: Magnetoresistance in a modified Mott regime
journal, April 2003


Magnetoresistance of 3d transition-metal-doped epitaxial ZnO thin films
journal, May 2001

  • Jin, Zhengwu; Hasegawa, K.; Fukumura, T.
  • Physica E: Low-dimensional Systems and Nanostructures, Vol. 10, Issue 1-3
  • DOI: 10.1016/S1386-9477(01)00094-7

Polaron Percolation in Diluted Magnetic Semiconductors
journal, May 2002


Oxide-diluted magnetic semiconductors: a review of the experimental status
journal, September 2003


Influence of s - d exchange interaction on the conductivity of Cd 1 x Mn x Se:In in the weakly localized regime
journal, February 1986