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Title: Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

Abstract

We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. Finally, this work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Univ. of Wyoming, Laramie, WY (United States). Dept. of Physics and Astronomy
Publication Date:
Research Org.:
Univ. of Wyoming, Laramie, WY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Science (SC), Biological and Environmental Research (BER) (SC-23)
OSTI Identifier:
1393430
Grant/Contract Number:  
FG02-10ER46728; SC0004981
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sapkota, Keshab R., Chen, Weimin, Maloney, F. Scott, Poudyal, Uma, and Wang, Wenyong. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires. United States: N. p., 2016. Web. doi:10.1038/srep35036.
Sapkota, Keshab R., Chen, Weimin, Maloney, F. Scott, Poudyal, Uma, & Wang, Wenyong. Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires. United States. doi:10.1038/srep35036.
Sapkota, Keshab R., Chen, Weimin, Maloney, F. Scott, Poudyal, Uma, and Wang, Wenyong. Fri . "Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires". United States. doi:10.1038/srep35036. https://www.osti.gov/servlets/purl/1393430.
@article{osti_1393430,
title = {Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires},
author = {Sapkota, Keshab R. and Chen, Weimin and Maloney, F. Scott and Poudyal, Uma and Wang, Wenyong},
abstractNote = {We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior was modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. Finally, this work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.},
doi = {10.1038/srep35036},
journal = {Scientific Reports},
number = 1,
volume = 6,
place = {United States},
year = {Fri Oct 14 00:00:00 EDT 2016},
month = {Fri Oct 14 00:00:00 EDT 2016}
}

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Cited by: 3 works
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Works referenced in this record:

Spintronics: A Spin-Based Electronics Vision for the Future
journal, November 2001

  • Wolf, S. A.; Awschalom, D. D.; Buhrman, R. A.
  • Science, Vol. 294, Issue 5546, p. 1488-1495
  • DOI: 10.1126/science.1065389