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Title: Methods of forming CIGS films

Abstract

Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes simultaneously evaporating Cu, In, Ga, Se, and Sb onto a substrate. The Se is incident on the substrate at a rate of at least 20 .ANG./s. The method also includes a selenization step, which includes evaporating Se over the substrate after the precursor step.

Inventors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1393421
Patent Number(s):
9,768,015
Application Number:
15/170,480
Assignee:
Alliance for Sustainable Energy, LLC NREL
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Jun 01
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Mansfield, Lorelle, and Ramanathan, Kannan. Methods of forming CIGS films. United States: N. p., 2017. Web.
Mansfield, Lorelle, & Ramanathan, Kannan. Methods of forming CIGS films. United States.
Mansfield, Lorelle, and Ramanathan, Kannan. Tue . "Methods of forming CIGS films". United States. doi:. https://www.osti.gov/servlets/purl/1393421.
@article{osti_1393421,
title = {Methods of forming CIGS films},
author = {Mansfield, Lorelle and Ramanathan, Kannan},
abstractNote = {Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes simultaneously evaporating Cu, In, Ga, Se, and Sb onto a substrate. The Se is incident on the substrate at a rate of at least 20 .ANG./s. The method also includes a selenization step, which includes evaporating Se over the substrate after the precursor step.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 19 00:00:00 EDT 2017},
month = {Tue Sep 19 00:00:00 EDT 2017}
}

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Works referenced in this record:

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