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Title: Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature

Abstract

There is a growing interest in the mode-by-mode understanding of electron and phonon transport for improving energy conversion technologies, such as thermoelectrics and photovoltaics. Whereas remarkable progress has been made in probing phonon–phonon interactions, it has been a challenge to directly measure electron–phonon interactions at the single-mode level, especially their effect on phonon transport above cryogenic temperatures. Here in this paper, we use three-pulse photoacoustic spectroscopy to investigate the damping of a single sub-terahertz coherent phonon mode by free charge carriers in silicon at room temperature. Building on conventional pump–probe photoacoustic spectroscopy, we introduce an additional laser pulse to optically generate charge carriers, and carefully design temporal sequence of the three pulses to unambiguously quantify the scattering rate of a single-phonon mode due to the electron–phonon interaction. Our results confirm predictions from first-principles simulations and indicate the importance of the often-neglected effect of electron–phonon interaction on phonon transport in doped semiconductors.

Authors:
ORCiD logo [1];  [2];  [2]; ORCiD logo [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Mechanical Engineering
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Chemistry
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1393401
Grant/Contract Number:  
FG02-09ER46577; SC0001299
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; Semiconductors; Thermoelectric devices and materials; thermoelectrics

Citation Formats

Liao, Bolin, Maznev, A. A., Nelson, Keith A., and Chen, Gang. Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature. United States: N. p., 2016. Web. doi:10.1038/ncomms13174.
Liao, Bolin, Maznev, A. A., Nelson, Keith A., & Chen, Gang. Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature. United States. doi:10.1038/ncomms13174.
Liao, Bolin, Maznev, A. A., Nelson, Keith A., and Chen, Gang. Wed . "Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature". United States. doi:10.1038/ncomms13174. https://www.osti.gov/servlets/purl/1393401.
@article{osti_1393401,
title = {Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature},
author = {Liao, Bolin and Maznev, A. A. and Nelson, Keith A. and Chen, Gang},
abstractNote = {There is a growing interest in the mode-by-mode understanding of electron and phonon transport for improving energy conversion technologies, such as thermoelectrics and photovoltaics. Whereas remarkable progress has been made in probing phonon–phonon interactions, it has been a challenge to directly measure electron–phonon interactions at the single-mode level, especially their effect on phonon transport above cryogenic temperatures. Here in this paper, we use three-pulse photoacoustic spectroscopy to investigate the damping of a single sub-terahertz coherent phonon mode by free charge carriers in silicon at room temperature. Building on conventional pump–probe photoacoustic spectroscopy, we introduce an additional laser pulse to optically generate charge carriers, and carefully design temporal sequence of the three pulses to unambiguously quantify the scattering rate of a single-phonon mode due to the electron–phonon interaction. Our results confirm predictions from first-principles simulations and indicate the importance of the often-neglected effect of electron–phonon interaction on phonon transport in doped semiconductors.},
doi = {10.1038/ncomms13174},
journal = {Nature Communications},
number = ,
volume = 7,
place = {United States},
year = {Wed Oct 12 00:00:00 EDT 2016},
month = {Wed Oct 12 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 10 works
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Works referenced in this record:

Giant anharmonic phonon scattering in PbTe
journal, June 2011

  • Delaire, O.; Ma, J.; Marty, K.
  • Nature Materials, Vol. 10, Issue 8, p. 614-619
  • DOI: 10.1038/nmat3035