Oxygen migration during resistance switching and failure of hafnium oxide memristors

Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng; Kumari, Niru; Davila, Noraica; Strachan, John Paul; Vine, David; Kilcoyne, A. L. David; Nishi, Yoshio; Williams, R. Stanley

doi:10.1063/1.4974535

Title: Oxygen migration during resistance switching and failure of hafnium oxide memristors

Journal Article · Mon Mar 06 00:00:00 EST 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4974535· OSTI ID:1393133

^[1]; Wang, Ziwen ^[2]; Huang, Xiaopeng ^[1]; Kumari, Niru ^[1]; Davila, Noraica ^[1]; Strachan, John Paul ^[1]; Vine, David ^[3]; Kilcoyne, A. L. David ^[3];

^[2]; Williams, R. Stanley ^[1]

Hewlett Packard Labs, Palo Alto, CA (United States)
Stanford Univ., Stanford, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced performance of memristor-based next-generation storage-class memory. Furthermore, we directly observed lateral oxygen migration using in-situ synchrotron x-ray absorption spectromicroscopy of HfO_x memristors during initial resistance switching, wear over millions of switching cycles, and eventual failure, through which we determined potential physical causes of failure. Using this information, we reengineered devices to mitigate three failure mechanisms and demonstrated an improvement in endurance of about three orders of magnitude.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1393133

Alternate ID(s):: OSTI ID: 1349333

Journal Information:: Applied Physics Letters, Vol. 110, Issue 10; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 46 works

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Indium Diffusion Behavior and Application in HfO ₂ ‐Based Conductive Bridge Random Access Memory Zheng, Hao-Xuan; Shih, Chih-Cheng; Chang, Ting-Chang physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 11 https://doi.org/10.1002/pssr.201900285	journal	May 2019
Interplay between ferroelectric and resistive switching in doped crystalline HfO ₂ Max, Benjamin; Pešić, Milan; Slesazeck, Stefan Journal of Applied Physics, Vol. 123, Issue 13 https://doi.org/10.1063/1.5015985	journal	April 2018
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