Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell

Chen, Yabin; Ke, Feng; Ci, Penghong; Ko, Changhyun; Park, Taegyun; Saremi, Sahar; Liu, Huili; Lee, Yeonbae; Suh, Joonki; Martin, Lane W.; Ager, Joel W.; Chen, Bin; Wu, Junqiao

doi:10.1021/acs.nanolett.6b03785

Title: Pressurizing Field-Effect Transistors of Few-Layer MoS₂ in a Diamond Anvil Cell

Journal Article · Thu Dec 08 00:00:00 EST 2016 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.6b03785· OSTI ID:1393110

Chen, Yabin ^[1]; Ke, Feng ^[2]; Ci, Penghong ^[1]; Ko, Changhyun ^[1];

^[1]; Saremi, Sahar ^[1]; Liu, Huili ^[3]; Lee, Yeonbae ^[4]; Suh, Joonki ^[1]; Martin, Lane W. ^[1]; Ager, Joel W. ^[3]; Chen, Bin ^[2];

^[3]

Univ. of California, Berkeley, CA (United States)
Center for High Pressure Science and Technology Advanced Research, Shanghai (China)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. In this paper, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS₂ and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS₂ can all be significantly enhanced with pressure. Finally, we expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Army Research Office (ARO)

Grant/Contract Number:: AC02-05CH11231; DMR-1306601; CMMI-1434147; EAR 11- 57758; W911NF-14-1-0104

OSTI ID:: 1393110

Journal Information:: Nano Letters, Vol. 17, Issue 1; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 27 works

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36 MATERIALS SCIENCE
diamond anvil cell
field-effect transistor
h-BN dielectric
hydrostatic pressure
MoS2

Title: Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell

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Title: Pressurizing Field-Effect Transistors of Few-Layer MoS₂ in a Diamond Anvil Cell