Electronic structure, surface doping, and optical response in epitaxial WSe2 thin films
Abstract
© 2016 American Chemical Society. High quality WSe 2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy. The combination of angle-resolved photoemission, scanning tunneling microscopy/spectroscopy, and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe 2 /BLG. We observe that a bilayer of WSe 2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct-indirect band gap crossover to trilayer WSe 2 . In the monolayer limit, WSe 2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX 2 (M = Mo, W; X = S, Se) materials. The exciton binding energy of monolayer-WSe 2 /BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional three-dimensional semiconductors, yet small as compared to other two-dimensional transition metal dichalcogennides (TMDCs) semiconductors. Finally, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron doping opens a route to further control the electronic properties of TMDCs.
- Authors:
-
- Nanjing Univ., Nanjing (China); SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Univ. of California, Berkeley, CA (United States); CIC nanoGUNE, Donostia-San Sebastian (Spain); Ikerbasque, Basque Foundation for Science, Bilbao (Spain)
- Univ. of California, Berkeley, CA (United States)
- Univ. of California, Berkeley, CA (United States); Rensselaer Polytechnic Inst., Troy, NY (United States)
- Univ. of California, Berkeley, CA (United States); Univ. Autonoma de Madrid, Madrid (Spain)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Pohang Univ. of Science and Technology, Pohang (Korea)
- Stanford Univ., Stanford, CA (United States); Chinese Academy of Sciences, Shanghai (China)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Stanford Univ., Stanford, CA (United States); Univ. of Oxford, Oxford (United Kingdom)
- Pohang Univ. of Science and Technology, Pohang (Korea); Pusan National Univ., Busan (Korea)
- Univ. of Oxford, Oxford (United Kingdom)
- Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1257732
- Alternate Identifier(s):
- OSTI ID: 1393040
- Report Number(s):
- SLAC-PUB-16566
Journal ID: ISSN 1530-6984
- Grant/Contract Number:
- AC02-76SF00515; AC02-05CH11231
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 16; Journal Issue: 4; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ARPES; exciton binding energy; MBE; STM/STS; Transition metal dichalcogenides; WSe2
Citation Formats
Zhang, Yi, Ugeda, Miguel M., Jin, Chenhao, Shi, Su -Fei, Bradley, Aaron J., Martin-Recio, Ana, Ryu, Hyejin, Kim, Jonghwan, Tang, Shujie, Kim, Yeongkwan, Zhou, Bo, Hwang, Choongyu, Chen, Yulin, Wang, Feng, Crommie, Michael F., Hussain, Zahid, Shen, Zhi -Xun, and Mo, Sung -Kwan. Electronic structure, surface doping, and optical response in epitaxial WSe2 thin films. United States: N. p., 2016.
Web. doi:10.1021/acs.nanolett.6b00059.
Zhang, Yi, Ugeda, Miguel M., Jin, Chenhao, Shi, Su -Fei, Bradley, Aaron J., Martin-Recio, Ana, Ryu, Hyejin, Kim, Jonghwan, Tang, Shujie, Kim, Yeongkwan, Zhou, Bo, Hwang, Choongyu, Chen, Yulin, Wang, Feng, Crommie, Michael F., Hussain, Zahid, Shen, Zhi -Xun, & Mo, Sung -Kwan. Electronic structure, surface doping, and optical response in epitaxial WSe2 thin films. United States. https://doi.org/10.1021/acs.nanolett.6b00059
Zhang, Yi, Ugeda, Miguel M., Jin, Chenhao, Shi, Su -Fei, Bradley, Aaron J., Martin-Recio, Ana, Ryu, Hyejin, Kim, Jonghwan, Tang, Shujie, Kim, Yeongkwan, Zhou, Bo, Hwang, Choongyu, Chen, Yulin, Wang, Feng, Crommie, Michael F., Hussain, Zahid, Shen, Zhi -Xun, and Mo, Sung -Kwan. 2016.
"Electronic structure, surface doping, and optical response in epitaxial WSe2 thin films". United States. https://doi.org/10.1021/acs.nanolett.6b00059. https://www.osti.gov/servlets/purl/1257732.
@article{osti_1257732,
title = {Electronic structure, surface doping, and optical response in epitaxial WSe2 thin films},
author = {Zhang, Yi and Ugeda, Miguel M. and Jin, Chenhao and Shi, Su -Fei and Bradley, Aaron J. and Martin-Recio, Ana and Ryu, Hyejin and Kim, Jonghwan and Tang, Shujie and Kim, Yeongkwan and Zhou, Bo and Hwang, Choongyu and Chen, Yulin and Wang, Feng and Crommie, Michael F. and Hussain, Zahid and Shen, Zhi -Xun and Mo, Sung -Kwan},
abstractNote = {© 2016 American Chemical Society. High quality WSe 2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy. The combination of angle-resolved photoemission, scanning tunneling microscopy/spectroscopy, and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe 2 /BLG. We observe that a bilayer of WSe 2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct-indirect band gap crossover to trilayer WSe 2 . In the monolayer limit, WSe 2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX 2 (M = Mo, W; X = S, Se) materials. The exciton binding energy of monolayer-WSe 2 /BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional three-dimensional semiconductors, yet small as compared to other two-dimensional transition metal dichalcogennides (TMDCs) semiconductors. Finally, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron doping opens a route to further control the electronic properties of TMDCs.},
doi = {10.1021/acs.nanolett.6b00059},
url = {https://www.osti.gov/biblio/1257732},
journal = {Nano Letters},
issn = {1530-6984},
number = 4,
volume = 16,
place = {United States},
year = {Mon Mar 14 00:00:00 EDT 2016},
month = {Mon Mar 14 00:00:00 EDT 2016}
}
Web of Science
Works referenced in this record:
Two-Dimensional Molybdenum Trioxide and Dichalcogenides
journal, April 2013
- Balendhran, Sivacarendran; Walia, Sumeet; Nili, Hussein
- Advanced Functional Materials, Vol. 23, Issue 32
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
journal, March 2013
- Butler, Sheneve Z.; Hollen, Shawna M.; Cao, Linyou
- ACS Nano, Vol. 7, Issue 4, p. 2898-2926
Two-dimensional transition metal dichalcogenide nanosheet-based composites
journal, January 2015
- Tan, Chaoliang; Zhang, Hua
- Chemical Society Reviews, Vol. 44, Issue 9
Two-dimensional material nanophotonics
journal, November 2014
- Xia, Fengnian; Wang, Han; Xiao, Di
- Nature Photonics, Vol. 8, Issue 12
Emerging Photoluminescence in Monolayer MoS2
journal, April 2010
- Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
- Nano Letters, Vol. 10, Issue 4, p. 1271-1275
The indirect to direct band gap transition in multilayered MoS 2 as predicted by screened hybrid density functional theory
journal, December 2011
- Ellis, Jason K.; Lucero, Melissa J.; Scuseria, Gustavo E.
- Applied Physics Letters, Vol. 99, Issue 26
Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors
journal, June 2012
- Kumar, A.; Ahluwalia, P. K.
- The European Physical Journal B, Vol. 85, Issue 6, Article No. 186
Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
journal, December 2013
- Zhang, Yi; Chang, Tay-Rong; Zhou, Bo
- Nature Nanotechnology, Vol. 9, Issue 2
Direct Measurement of the Thickness-Dependent Electronic Band Structure of Using Angle-Resolved Photoemission Spectroscopy
journal, September 2013
- Jin, Wencan; Yeh, Po-Chun; Zaki, Nader
- Physical Review Letters, Vol. 111, Issue 10
Electronic properties of single-layer and multilayer transition metal dichalcogenides MX 2 ( M = Mo, W and X = S, Se): Electronic properties of TMDs
journal, September 2014
- Roldán, Rafael; Silva-Guillén, Jose A.; López-Sancho, M. Pilar
- Annalen der Physik, Vol. 526, Issue 9-10
Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
journal, October 2011
- Zhu, Z. Y.; Cheng, Y. C.; Schwingenschlögl, U.
- Physical Review B, Vol. 84, Issue 15
Spin-Orbit Splitting in Single-Layer Revealed by Triply Resonant Raman Scattering
journal, September 2013
- Sun, Linfeng; Yan, Jiaxu; Zhan, Da
- Physical Review Letters, Vol. 111, Issue 12
Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2
journal, August 2014
- Alidoust, Nasser; Bian, Guang; Xu, Su-Yang
- Nature Communications, Vol. 5, Issue 1
Electronic Structure of Epitaxial Single-Layer
journal, January 2015
- Miwa, Jill A.; Ulstrup, Søren; Sørensen, Signe G.
- Physical Review Letters, Vol. 114, Issue 4
Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor
journal, October 2014
- Riley, J. M.; Mazzola, F.; Dendzik, M.
- Nature Physics, Vol. 10, Issue 11
Valley-selective circular dichroism of monolayer molybdenum disulphide
journal, January 2012
- Cao, Ting; Wang, Gang; Han, Wenpeng
- Nature Communications, Vol. 3, Issue 1
Control of valley polarization in monolayer MoS2 by optical helicity
journal, June 2012
- Mak, Kin Fai; He, Keliang; Shan, Jie
- Nature Nanotechnology, Vol. 7, Issue 8
Coupled Spin and Valley Physics in Monolayers of and Other Group-VI Dichalcogenides
journal, May 2012
- Xiao, Di; Liu, Gui-Bin; Feng, Wanxiang
- Physical Review Letters, Vol. 108, Issue 19
Valley polarization in MoS2 monolayers by optical pumping
journal, June 2012
- Zeng, Hualing; Dai, Junfeng; Yao, Wang
- Nature Nanotechnology, Vol. 7, Issue 8
Valley excitons in two-dimensional semiconductors
journal, December 2014
- Yu, Hongyi; Cui, Xiaodong; Xu, Xiaodong
- National Science Review, Vol. 2, Issue 1
Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS
journal, May 2012
- Cheiwchanchamnangij, Tawinan; Lambrecht, Walter R. L.
- Physical Review B, Vol. 85, Issue 20
Effects of confinement and environment on the electronic structure and exciton binding energy of MoS from first principles
journal, December 2012
- Komsa, Hannu-Pekka; Krasheninnikov, Arkady V.
- Physical Review B, Vol. 86, Issue 24
Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
journal, August 2014
- Ugeda, Miguel M.; Bradley, Aaron J.; Shi, Su-Fei
- Nature Materials, Vol. 13, Issue 12
Optical Spectrum of : Many-Body Effects and Diversity of Exciton States
journal, November 2013
- Qiu, Diana Y.; da Jornada, Felipe H.; Louie, Steven G.
- Physical Review Letters, Vol. 111, Issue 21
How Good Can Monolayer MoS 2 Transistors Be?
journal, September 2011
- Yoon, Youngki; Ganapathi, Kartik; Salahuddin, Sayeef
- Nano Letters, Vol. 11, Issue 9
Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H- semiconductors ( Mo, W; S, Se, Te)
journal, January 2012
- Yun, Won Seok; Han, S. W.; Hong, Soon Cheol
- Physical Review B, Vol. 85, Issue 3
Flexible Electronics: Highly Flexible and Transparent Multilayer MoS 2 Transistors with Graphene Electrodes (Small 19/2013)
journal, October 2013
- Yoon, Jongwon; Park, Woojin; Bae, Ga-Yeong
- Small, Vol. 9, Issue 19
Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
journal, May 2013
- Britnell, L.; Ribeiro, R. M.; Eckmann, A.
- Science, Vol. 340, Issue 6138
High Performance Multilayer MoS2Transistors with Scandium Contacts
journal, December 2012
- Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
- Nano Letters, Vol. 13, Issue 1, p. 100-105
Hopping transport through defect-induced localized states in molybdenum disulphide
journal, October 2013
- Qiu, Hao; Xu, Tao; Wang, Zilu
- Nature Communications, Vol. 4, Issue 1
Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides
journal, March 2013
- Terrones, Humberto; López-Urías, Florentino; Terrones, Mauricio
- Scientific Reports, Vol. 3, Issue 1
Strain engineering of WS 2 , WSe 2 , and WTe 2
journal, January 2014
- Amin, B.; Kaloni, T. P.; Schwingenschlögl, U.
- RSC Advances, Vol. 4, Issue 65
Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe 2
journal, July 2014
- Desai, Sujay B.; Seol, Gyungseon; Kang, Jeong Seuk
- Nano Letters, Vol. 14, Issue 8
Electronics based on two-dimensional materials
journal, October 2014
- Fiori, Gianluca; Bonaccorso, Francesco; Iannaccone, Giuseppe
- Nature Nanotechnology, Vol. 9, Issue 10
Atomically thin p–n junctions
journal, September 2014
- Shi, Su-Fei; Wang, Feng
- Nature Nanotechnology, Vol. 9, Issue 9
From two-dimensional materials to heterostructures
journal, February 2015
- Niu, Tianchao; Li, Ang
- Progress in Surface Science, Vol. 90, Issue 1
Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
journal, February 2012
- Liu, Keng-Ku; Zhang, Wenjing; Lee, Yi-Hsien
- Nano Letters, Vol. 12, Issue 3, p. 1538-1544
van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates
journal, May 2012
- Shi, Yumeng; Zhou, Wu; Lu, Ang-Yu
- Nano Letters, Vol. 12, Issue 6, p. 2784-2791
Structure and Electronic Properties of In Situ Synthesized Single-Layer MoS 2 on a Gold Surface
journal, June 2014
- Sørensen, Signe G.; Füchtbauer, Henrik G.; Tuxen, Anders K.
- ACS Nano, Vol. 8, Issue 7
Chemical vapor deposition growth of monolayer MoSe2 nanosheets
journal, April 2014
- Shaw, Jonathan C.; Zhou, Hailong; Chen, Yu
- Nano Research, Vol. 7, Issue 4
Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
journal, August 2014
- Huang, Chunming; Wu, Sanfeng; Sanchez, Ana M.
- Nature Materials, Vol. 13, Issue 12, p. 1096-1101
Zeeman-type spin splitting controlled by an electric field
journal, July 2013
- Yuan, Hongtao; Bahramy, Mohammad Saeed; Morimoto, Kazuhiro
- Nature Physics, Vol. 9, Issue 9
Occupied and unoccupied electronic structure of Na doped MoS2(0001)
journal, December 2014
- Komesu, Takashi; Le, Duy; Zhang, Xin
- Applied Physics Letters, Vol. 105, Issue 24
Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
journal, March 2014
- Ross, Jason S.; Klement, Philip; Jones, Aaron M.
- Nature Nanotechnology, Vol. 9, Issue 4
Quantum Spin Hall Effect in Graphene
journal, November 2005
- Kane, C. L.; Mele, E. J.
- Physical Review Letters, Vol. 95, Issue 22
Quantum Hall Effect in Twisted Bilayer Graphene
journal, November 2011
- Lee, Dong Su; Riedl, Christian; Beringer, Thomas
- Physical Review Letters, Vol. 107, Issue 21
Interaction-Induced Topological Insulator States in Strained Graphene
journal, August 2012
- Abanin, D. A.; Pesin, D. A.
- Physical Review Letters, Vol. 109, Issue 6
Wave-Function Mapping of Graphene Quantum Dots with Soft Confinement
journal, January 2012
- Subramaniam, D.; Libisch, F.; Li, Y.
- Physical Review Letters, Vol. 108, Issue 4
Graphene spintronics
journal, October 2014
- Han, Wei; Kawakami, Roland K.; Gmitra, Martin
- Nature Nanotechnology, Vol. 9, Issue 10
Spin and pseudospins in layered transition metal dichalcogenides
journal, April 2014
- Xu, Xiaodong; Yao, Wang; Xiao, Di
- Nature Physics, Vol. 10, Issue 5
Spin–orbit coupling in the band structure of monolayer WSe 2
journal, April 2015
- Le, Duy; Barinov, Alexei; Preciado, Edwin
- Journal of Physics: Condensed Matter, Vol. 27, Issue 18
Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy
journal, October 2010
- Song, Can-Li; Wang, Yi-Lin; Jiang, Ye-Ping
- Applied Physics Letters, Vol. 97, Issue 14, Article No. 143118
Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates
journal, January 2013
- Wang, Qingyan; Zhang, Wenhao; Wang, Lili
- Journal of Physics: Condensed Matter, Vol. 25, Issue 9
Fermi arcs in a doped pseudospin-1/2 Heisenberg antiferromagnet
journal, June 2014
- Kim, Y. K.; Krupin, O.; Denlinger, J. D.
- Science, Vol. 345, Issue 6193
Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe 2 Nanostructures
journal, March 2015
- Bradley, Aaron J.; M. Ugeda, Miguel; da Jornada, Felipe H.
- Nano Letters, Vol. 15, Issue 4
Interface-induced superconductivity and strain-dependent spin density waves in FeSe/SrTiO3 thin films
journal, May 2013
- Tan, Shiyong; Zhang, Yan; Xia, Miao
- Nature Materials, Vol. 12, Issue 7
Tightly Bound Excitons in Monolayer
journal, July 2014
- He, Keliang; Kumar, Nardeep; Zhao, Liang
- Physical Review Letters, Vol. 113, Issue 2
Giant Enhancement of the Optical Second-Harmonic Emission of Monolayers by Laser Excitation at Exciton Resonances
journal, March 2015
- Wang, G.; Marie, X.; Gerber, I.
- Physical Review Letters, Vol. 114, Issue 9
Works referencing / citing this record:
Nanoscale mapping of quasiparticle band alignment
journal, July 2019
- Ulstrup, Søren; Giusca, Cristina E.; Miwa, Jill A.
- Nature Communications, Vol. 10, Issue 1
Construction of bilayer PdSe2 on epitaxial graphene
journal, May 2018
- Li, En; Wang, Dongfei; Fan, Peng
- Nano Research, Vol. 11, Issue 11
Visualizing electrostatic gating effects in two-dimensional heterostructures
journal, July 2019
- Nguyen, Paul V.; Teutsch, Natalie C.; Wilson, Nathan P.
- Nature, Vol. 572, Issue 7768
Narrow photoluminescence and Raman peaks of epitaxial MoS 2 on graphene/Ir(1 1 1)
journal, November 2018
- Ehlen, Niels; Hall, Joshua; Senkovskiy, Boris V.
- 2D Materials, Vol. 6, Issue 1
Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
journal, December 2019
- Liu, Ro-Ya; Lin, Meng-Kai; Chen, Peng
- Physical Review B, Vol. 100, Issue 21
Ultra‐Long Lifetimes of Single Quantum Emitters in Monolayer WSe 2 /hBN Heterostructures
journal, April 2019
- Dass, Chandriker Kavir; Khan, Mahtab A.; Clark, Genevieve
- Advanced Quantum Technologies, Vol. 2, Issue 5-6
Scanning tunneling spectroscopy of van der Waals graphene/semiconductor interfaces: absence of Fermi level pinning
journal, July 2017
- Le Quang, T.; Cherkez, V.; Nogajewski, K.
- 2D Materials, Vol. 4, Issue 3
Temperature-driven evolution of critical points, interlayer coupling, and layer polarization in bilayer
journal, April 2018
- Du, Luojun; Zhang, Tingting; Liao, Mengzhou
- Physical Review B, Vol. 97, Issue 16
ZnO/WSe 2 vdW heterostructure for photocatalytic water splitting
journal, January 2019
- Hu, Fafei; Tao, Luqi; Ye, Huaiyu
- Journal of Materials Chemistry C, Vol. 7, Issue 23
Roadmap on finding chiral valleys: screening 2D materials for valleytronics
journal, June 2018
- Bussolotti, Fabio; Kawai, Hiroyo; Ooi, Zi En
- Nano Futures, Vol. 2, Issue 3
Giant spin-splitting and gap renormalization driven by trions in single-layer WS2/h-BN heterostructures
journal, January 2018
- Katoch, Jyoti; Ulstrup, Søren; Koch, Roland J.
- Nature Physics, Vol. 14, Issue 4
Spin-resolved photoemission study of epitaxially grown MoSe 2 and WSe 2 thin films
journal, September 2016
- Mo, Sung-Kwan; Hwang, Choongyu; Zhang, Yi
- Journal of Physics: Condensed Matter, Vol. 28, Issue 45
Wetting behavior of MoS 2 thin films
journal, July 2019
- Singh, Budhi; Ali, Nasir; Chakravorty, Anusmita
- Materials Research Express, Vol. 6, Issue 9
Growth and Thermo-driven Crystalline Phase Transition of Metastable Monolayer 1T′-WSe2 Thin Film
journal, February 2019
- Chen, Wang; Xie, Xuedong; Zong, Junyu
- Scientific Reports, Vol. 9, Issue 1
A dielectric-defined lateral heterojunction in a monolayer semiconductor
journal, February 2019
- Utama, M. Iqbal Bakti; Kleemann, Hans; Zhao, Wenyu
- Nature Electronics, Vol. 2, Issue 2
Hydrothermal synthesis of WSe2 films and their application in high-performance photodetectors
journal, August 2018
- Wen, Ruchun; Wei, Aixiang; Tao, Lili
- Applied Physics A, Vol. 124, Issue 9
Layer-dependent dielectric and optical properties of centimeter-scale 2D WSe 2 : evolution from a single layer to few layers
journal, January 2019
- Gu, Honggang; Song, Baokun; Fang, Mingsheng
- Nanoscale, Vol. 11, Issue 47
Direct determination of monolayer MoS 2 and WSe 2 exciton binding energies on insulating and metallic substrates
journal, January 2018
- Park, Soohyung; Mutz, Niklas; Schultz, Thorsten
- 2D Materials, Vol. 5, Issue 2
Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2
journal, August 2018
- Ugeda, Miguel M.; Pulkin, Artem; Tang, Shujie
- Nature Communications, Vol. 9, Issue 1
Enhanced Electron-Phonon Interaction in Multivalley Materials
journal, August 2019
- Sohier, Thibault; Ponomarev, Evgeniy; Gibertini, Marco
- Physical Review X, Vol. 9, Issue 3
Ambipolar and Robust WSe 2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides
journal, November 2019
- Xu, Hao; Han, Xiaoyu; Liu, Wei
- Advanced Materials Interfaces, Vol. 7, Issue 1
Recent Advances in Quantum Effects of 2D Materials
journal, April 2019
- Yi, Ya; Chen, Zhanxu; Yu, Xue‐Feng
- Advanced Quantum Technologies, Vol. 2, Issue 5-6
Electronic-dimensionality reduction of bulk MoS 2 by hydrogen treatment
journal, January 2018
- Cho, Soohyun; Kim, Beom Seo; Kim, Beomyoung
- Physical Chemistry Chemical Physics, Vol. 20, Issue 35
Large quantum-spin-Hall gap in single-layer 1T′ WSe2
journal, May 2018
- Chen, P.; Pai, Woei Wu; Chan, Y. -H.
- Nature Communications, Vol. 9, Issue 1
Recent advances in synthesis and biosensors of two-dimensional MoS 2
journal, October 2019
- Zhu, Xiaona; Ding, Ran; Wang, Zegao
- Nanotechnology, Vol. 30, Issue 50
Direct observation of hidden spin polarization in
journal, January 2020
- Tu, J.; Chen, X. B.; Ruan, X. Z.
- Physical Review B, Vol. 101, Issue 3
Robust circular polarization of indirect Q-K transitions in bilayer
journal, October 2019
- Du, Luojun; Zhang, Qian; Zhang, Tingting
- Physical Review B, Vol. 100, Issue 16
Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-layer WSe2
text, January 2018
- Ugeda, Miguel M.; Pulkin, Artem; Tang, Shujie
- arXiv
Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
text, January 2019
- Liu, Ro-Ya; Lin, Meng-Kai; Chen, Peng
- arXiv
Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2
journal, August 2018
- Ugeda, Miguel M.; Pulkin, Artem; Tang, Shujie
- Nature Communications, Vol. 9, Issue 1
Nanoscale mapping of quasiparticle band alignment
journal, July 2019
- Ulstrup, Søren; Giusca, Cristina E.; Miwa, Jill A.
- Nature Communications, Vol. 10, Issue 1
Determination of the band parameters of bulk 2H-MX2 (M = Mo, W; X = S, Se) by angle-resolved photoemission spectroscopy
journal, November 2016
- Kim, Beom Seo; Rhim, Jun-Won; Kim, Beomyoung
- Scientific Reports, Vol. 6, Issue 1
Angle-resolved photoemission spectroscopy for the study of two-dimensional materials
journal, March 2017
- Mo, Sung-Kwan
- Nano Convergence, Vol. 4, Issue 1