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Title: Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

Abstract

ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO. Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [3];  [4];  [5];  [3]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Univ. of California, Los Angeles, CA (United States). Dept. of Materials Science and Engineering
  3. Seoul National Univ. (Korea, Republic of). Dept. of Physics and Astronomy
  4. Sejong Univ., Seoul (Korea, Republic of). Dept. of Nanotechnology and Advanced Materials Engineering
  5. Korea Univ., Seoul (Korea, Republic of). KU-KIST Graduate School of Converging Science and Technology
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1392807
Report Number(s):
LA-UR-17-21277
Journal ID: ISSN 0957-4484
Grant/Contract Number:
AC52-06NA25396; AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 28; Journal Issue: 39; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Material Science

Citation Formats

Yoo, Jinkyoung, Ahmed, Towfiq, Tang, Wei, Kim, Yong-Jin, Hong, Young Joon, Lee, Chul-Ho, and Yi, Gyu-Chul. Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition. United States: N. p., 2017. Web. doi:10.1088/1361-6528/aa7ec5.
Yoo, Jinkyoung, Ahmed, Towfiq, Tang, Wei, Kim, Yong-Jin, Hong, Young Joon, Lee, Chul-Ho, & Yi, Gyu-Chul. Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition. United States. doi:10.1088/1361-6528/aa7ec5.
Yoo, Jinkyoung, Ahmed, Towfiq, Tang, Wei, Kim, Yong-Jin, Hong, Young Joon, Lee, Chul-Ho, and Yi, Gyu-Chul. 2017. "Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition". United States. doi:10.1088/1361-6528/aa7ec5.
@article{osti_1392807,
title = {Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition},
author = {Yoo, Jinkyoung and Ahmed, Towfiq and Tang, Wei and Kim, Yong-Jin and Hong, Young Joon and Lee, Chul-Ho and Yi, Gyu-Chul},
abstractNote = {ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO. Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.},
doi = {10.1088/1361-6528/aa7ec5},
journal = {Nanotechnology},
number = 39,
volume = 28,
place = {United States},
year = 2017,
month = 9
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on September 5, 2018
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  • Gain-guided, injection lasers using AlAsSb for optical confinement and a strained InAsSb/InAs multiquantum well active region were grown by metalorganic chemical vapor deposition. The semi-metal properties of a {ital p}-GaAsSb/{ital n}-InAs heterojunction are utilized as a source for injection of electrons into the active region of the laser. In pulsed mode, the laser operated up to 210 K with an emission wavelength of 3.8{endash}3.9 {mu}m. We also report on the two-color emission of a light-emitting diode with two different active regions to demonstrate multistage operation of these {open_quote}{open_quote}unipolar {close_quote}{close_quote} devices. {copyright} {ital 1996 American Institute of Physics.}
  • We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on themore » inverted Ga-polar surface.« less
  • Index guided single stripe lasers have been fabricated by using a one-step selective area growth technique in the metalorganic chemical vapor deposition system. By pyrolytically depositing SiO or SiO/sub 2/ layers on GaAs substrate, and lithographically defining the stripes, single stripe heterostructure lasers can be achieved on the uncovered substrate while polycrystalline films are observed beyond the stripe regions. The device operated with a single spatial mode for up to more than three times the threshold current.
  • Room-temperature pulsed laser operation of (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P/ Ga/sub 0.5/In/sub 0.5/P/ (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved for the first time. The lowest threshold current density was 26 kA/cm/sup 2/ for a diode with a 22-..mu..m-wide and 160-..mu..m-long stripe. The lasing wavelength was 0.683 ..mu..m.
  • Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width lasermore » diode under room-temperature pulsed operation.« less