Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei; Kim, Yong-Jin; Hong, Young Joon; Lee, Chul-Ho; Yi, Gyu-Chul

doi:10.1088/1361-6528/aa7ec5

Title: Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

Journal Article · Tue Sep 05 00:00:00 EDT 2017 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/aa7ec5· OSTI ID:1392807

^[1];

^[1]; Tang, Wei ^[2]; Kim, Yong-Jin ^[3]; Hong, Young Joon ^[4]; Lee, Chul-Ho ^[5]; Yi, Gyu-Chul ^[3]

Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Univ. of California, Los Angeles, CA (United States). Dept. of Materials Science and Engineering
Seoul National Univ. (Korea, Republic of). Dept. of Physics and Astronomy
Sejong Univ., Seoul (Korea, Republic of). Dept. of Nanotechnology and Advanced Materials Engineering
Korea Univ., Seoul (Korea, Republic of). KU-KIST Graduate School of Converging Science and Technology

ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO. Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.

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Research Organization:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC52-06NA25396; AC04-94AL85000

OSTI ID:: 1392807

Report Number(s):: LA-UR-17-21277

Journal Information:: Nanotechnology, Vol. 28, Issue 39; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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