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Title: Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE

Abstract

O-polar and Zn-polar ZnO films were prepared by rf-plasma assisted molecular beam epitaxy (MBE) on sapphire substrates. Arsenic ions have been implanted into high quality ZnO with a definite polarity. Substantial temperature-independent ferromagnetism has been observed for both films, with the O-polar film having approximately twice the magnetization as the Zn-polar film. The saturation magnetization is shown to be due to the defects introduced during implantation, rather than to local moments associated with the As ion. Rutherford Backscattering/Channeling and optical absorption measurements confirm that the implantation introduces more defect states in the O-polar films, while X-ray absorption near-edge structure measurements show that the environment of the arsenic ions was similar for both polarities. (C) 2014 Elsevier B.V. All rights reserved.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Natural Science Foundation of China (NNSFC)
OSTI Identifier:
1392638
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Letters; Journal Volume: 144; Journal Issue: C
Country of Publication:
United States
Language:
English
Subject:
Doped ZnO; Ferromagnetism; Ion Implantation

Citation Formats

Ying, Minju, Cheng, Wei, Wang, Xiaoxiao, Liao, Bin, Zhang, Xu, Mei, Zengxia, Du, Xiaolong, Heald, Steve M., Blythe, Harry J., Mark Fox, A., and Gehring, Gillian A.. Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE. United States: N. p., 2015. Web. doi:10.1016/j.matlet.2014.12.017.
Ying, Minju, Cheng, Wei, Wang, Xiaoxiao, Liao, Bin, Zhang, Xu, Mei, Zengxia, Du, Xiaolong, Heald, Steve M., Blythe, Harry J., Mark Fox, A., & Gehring, Gillian A.. Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE. United States. doi:10.1016/j.matlet.2014.12.017.
Ying, Minju, Cheng, Wei, Wang, Xiaoxiao, Liao, Bin, Zhang, Xu, Mei, Zengxia, Du, Xiaolong, Heald, Steve M., Blythe, Harry J., Mark Fox, A., and Gehring, Gillian A.. Wed . "Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE". United States. doi:10.1016/j.matlet.2014.12.017.
@article{osti_1392638,
title = {Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE},
author = {Ying, Minju and Cheng, Wei and Wang, Xiaoxiao and Liao, Bin and Zhang, Xu and Mei, Zengxia and Du, Xiaolong and Heald, Steve M. and Blythe, Harry J. and Mark Fox, A. and Gehring, Gillian A.},
abstractNote = {O-polar and Zn-polar ZnO films were prepared by rf-plasma assisted molecular beam epitaxy (MBE) on sapphire substrates. Arsenic ions have been implanted into high quality ZnO with a definite polarity. Substantial temperature-independent ferromagnetism has been observed for both films, with the O-polar film having approximately twice the magnetization as the Zn-polar film. The saturation magnetization is shown to be due to the defects introduced during implantation, rather than to local moments associated with the As ion. Rutherford Backscattering/Channeling and optical absorption measurements confirm that the implantation introduces more defect states in the O-polar films, while X-ray absorption near-edge structure measurements show that the environment of the arsenic ions was similar for both polarities. (C) 2014 Elsevier B.V. All rights reserved.},
doi = {10.1016/j.matlet.2014.12.017},
journal = {Materials Letters},
number = C,
volume = 144,
place = {United States},
year = {Wed Apr 01 00:00:00 EDT 2015},
month = {Wed Apr 01 00:00:00 EDT 2015}
}