Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE

Ying, Minju; Cheng, Wei; Wang, Xiaoxiao; Liao, Bin; Zhang, Xu; Mei, Zengxia; Du, Xiaolong; Heald, Steve M.; Blythe, Harry J.; Mark Fox, A.; Gehring, Gillian A.

doi:10.1016/j.matlet.2014.12.017

Title: Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE

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Abstract

O-polar and Zn-polar ZnO films were prepared by rf-plasma assisted molecular beam epitaxy (MBE) on sapphire substrates. Arsenic ions have been implanted into high quality ZnO with a definite polarity. Substantial temperature-independent ferromagnetism has been observed for both films, with the O-polar film having approximately twice the magnetization as the Zn-polar film. The saturation magnetization is shown to be due to the defects introduced during implantation, rather than to local moments associated with the As ion. Rutherford Backscattering/Channeling and optical absorption measurements confirm that the implantation introduces more defect states in the O-polar films, while X-ray absorption near-edge structure measurements show that the environment of the arsenic ions was similar for both polarities. (C) 2014 Elsevier B.V. All rights reserved.

Authors:: Ying, Minju; Cheng, Wei; Wang, Xiaoxiao; Liao, Bin; Zhang, Xu; Mei, Zengxia; Du, Xiaolong; Heald, Steve M.; Blythe, Harry J.; Mark Fox, A.; Gehring, Gillian A.

Publication Date:: Wed Apr 01 00:00:00 EDT 2015

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC)

OSTI Identifier:: 1392638

DOE Contract Number:: AC02-06CH11357

Resource Type:: Journal Article

Journal Name:: Materials Letters

Additional Journal Information:: Journal Volume: 144; Journal Issue: C; Journal ID: ISSN 0167-577X

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: Doped ZnO; Ferromagnetism; Ion Implantation

Citation Formats


                    Ying, Minju, Cheng, Wei, Wang, Xiaoxiao, Liao, Bin, Zhang, Xu, Mei, Zengxia, Du, Xiaolong, Heald, Steve M., Blythe, Harry J., Mark Fox, A., and Gehring, Gillian A. Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE.  United States: N. p., 2015. 
        Web.  doi:10.1016/j.matlet.2014.12.017.

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                    Ying, Minju, Cheng, Wei, Wang, Xiaoxiao, Liao, Bin, Zhang, Xu, Mei, Zengxia, Du, Xiaolong, Heald, Steve M., Blythe, Harry J., Mark Fox, A., & Gehring, Gillian A. Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE.  United States.  https://doi.org/10.1016/j.matlet.2014.12.017

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                    Ying, Minju, Cheng, Wei, Wang, Xiaoxiao, Liao, Bin, Zhang, Xu, Mei, Zengxia, Du, Xiaolong, Heald, Steve M., Blythe, Harry J., Mark Fox, A., and Gehring, Gillian A. 2015.  
        "Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE".  United States.  https://doi.org/10.1016/j.matlet.2014.12.017.

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@article{osti_1392638,

  title        = {Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE},

  author       = {Ying, Minju and Cheng, Wei and Wang, Xiaoxiao and Liao, Bin and Zhang, Xu and Mei, Zengxia and Du, Xiaolong and Heald, Steve M. and Blythe, Harry J. and Mark Fox, A. and Gehring, Gillian A.},

  abstractNote = {O-polar and Zn-polar ZnO films were prepared by rf-plasma assisted molecular beam epitaxy (MBE) on sapphire substrates. Arsenic ions have been implanted into high quality ZnO with a definite polarity. Substantial temperature-independent ferromagnetism has been observed for both films, with the O-polar film having approximately twice the magnetization as the Zn-polar film. The saturation magnetization is shown to be due to the defects introduced during implantation, rather than to local moments associated with the As ion. Rutherford Backscattering/Channeling and optical absorption measurements confirm that the implantation introduces more defect states in the O-polar films, while X-ray absorption near-edge structure measurements show that the environment of the arsenic ions was similar for both polarities. (C) 2014 Elsevier B.V. All rights reserved.},

  doi          = {10.1016/j.matlet.2014.12.017},

  url          = {https://www.osti.gov/biblio/1392638},
  journal      = {Materials Letters},

  issn         = {0167-577X},

  number       = C,

  volume       = 144,

  place        = {United States},

  year         = {Wed Apr 01 00:00:00 EDT 2015},

  month        = {Wed Apr 01 00:00:00 EDT 2015}

}

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