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Title: Improved Performance in FeF 2 Conversion Cathodes through Use of a Conductive 3D Scaffold and Al 2 O 3 ALD Coating

Authors:
 [1];  [2];  [3];  [1];  [3];  [1]
  1. Frederick Seitz Materials Research Laboratory, Department of Materials Science and Engineering, Beckman Institute, University of Illinois at Urbana-Champaign, Urbana IL 61801 USA
  2. Frederick Seitz Materials Research Laboratory, Department of Materials Science and Engineering, Beckman Institute, University of Illinois at Urbana-Champaign, Urbana IL 61801 USA, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei Anhui 230031 P. R. China
  3. Frederick Seitz Materials Research Laboratory, Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana IL 61801 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1392179
Grant/Contract Number:
FG02-07ER46471
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 27; Journal Issue: 35; Related Information: CHORUS Timestamp: 2017-09-18 11:30:01; Journal ID: ISSN 1616-301X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Kim, Sanghyeon, Liu, Jinyun, Sun, Ke, Wang, Junjie, Dillon, Shen J., and Braun, Paul V.. Improved Performance in FeF 2 Conversion Cathodes through Use of a Conductive 3D Scaffold and Al 2 O 3 ALD Coating. Germany: N. p., 2017. Web. doi:10.1002/adfm.201702783.
Kim, Sanghyeon, Liu, Jinyun, Sun, Ke, Wang, Junjie, Dillon, Shen J., & Braun, Paul V.. Improved Performance in FeF 2 Conversion Cathodes through Use of a Conductive 3D Scaffold and Al 2 O 3 ALD Coating. Germany. doi:10.1002/adfm.201702783.
Kim, Sanghyeon, Liu, Jinyun, Sun, Ke, Wang, Junjie, Dillon, Shen J., and Braun, Paul V.. Mon . "Improved Performance in FeF 2 Conversion Cathodes through Use of a Conductive 3D Scaffold and Al 2 O 3 ALD Coating". Germany. doi:10.1002/adfm.201702783.
@article{osti_1392179,
title = {Improved Performance in FeF 2 Conversion Cathodes through Use of a Conductive 3D Scaffold and Al 2 O 3 ALD Coating},
author = {Kim, Sanghyeon and Liu, Jinyun and Sun, Ke and Wang, Junjie and Dillon, Shen J. and Braun, Paul V.},
abstractNote = {},
doi = {10.1002/adfm.201702783},
journal = {Advanced Functional Materials},
number = 35,
volume = 27,
place = {Germany},
year = {Mon Jul 24 00:00:00 EDT 2017},
month = {Mon Jul 24 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on July 24, 2018
Publisher's Accepted Manuscript

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  • Our study compares the physical, chemical and electrical properties of Al 2O 3 thin films deposited on gallium polar c- and nonpolar m -plane GaN substrates by atomic layer deposition (ALD). Correlations were sought between the film's structure, composition, and electrical properties. The thickness of the Al 2O 3 films was 19.2 nm as determined from a Si witness sample by spectroscopic ellipsometry. We measured the gate dielectric was slightly aluminum-rich (Al:O=1:1.3) from X-ray photoelectron spectroscopy (XPS) depth profile, and the oxide-semiconductor interface carbon concentration was lower on c -plane GaN. The oxide's surface morphology was similar on both substrates,more » but was smoothest on c -plane GaN as determined by atomic force microscopy (AFM). Circular capacitors (50-300 μm diameter) with Ni/Au (20/100 nm) metal contacts on top of the oxide were created by standard photolithography and e-beam evaporation methods to form metal-oxide-semiconductor capacitors (MOSCAPs). Moreover, the alumina deposited on c -plane GaN showed less hysteresis (0.15 V) than on m -plane GaN (0.24 V) in capacitance-voltage (CV) characteristics, consistent with its better quality of this dielectric as evidenced by negligible carbon contamination and smooth oxide surface. These results demonstrate the promising potential of ALD Al 2O 3 on c -plane GaN, but further optimization of ALD is required to realize the best properties of Al 2O 3 on m -plane GaN.« less
  • Solvent-refined lignite (SRL) can be produced by treating lignite (not dried) with CO-H/sub 2/, donor solvent and high temperature. This reactive black solid softens at about 150/sup 0/C, is soluble in many organic solvents, is very low in ash and sulfur, and appears to be a good feedstock for further upgrading. Thus, a wide-ranging study was undertaken to determine the best reducing conditions for converting SRL to light distillable liquid fuels and/or chemical feedstocks. Batch autoclave studies were carried out in the temperature range of 375-450/sup 0/C, hydrogen pressure range of 1500-4500 psi, with catalysts Ni-Mo-Al/sub 2/O/sub 3/, Co-Mo-Al/sub 2/O/submore » 3/, Ni-W-Al/sub 2/O/sub 3/. Ni-W-SiO/sub 2/-Al/sub 2/O/sub 3/, SiO/sub 2/-Al/sub 2/O/sub 3/, Al/sub 2/O/sub 3/,SnCl/sub 2/, and presulfided catalysts Ni-Mo-Al/sub 2/O/sub 3/, Co-Mo-Al/sub 2/O/sub 3/, Ni-W-Al/sub 2/O/sub 3/. Varying amounts of the solvents tetrahydrofuran, tetralin, napthalene, and FS-120 petroleum fraction were also studied. Reductions without any solvent were studied too and were quite successful. The results were evaluated in terms of the amount of light liquids produced, deoxygenation, denitrification, hydrogen-carbon ratios, aromatic-aliphatic hydrogen ratios, and benzene solubility of unconverted material. Best results were obtained with a presulfided Ni-Mo-Al/sub 2/O/sub 3/ catalyst at 450/sup 0/C, operating pressure of about 3500 psi with a 1:1 SRL-tetralin solvent ratio (90 percent overall conversion, approx.20 percent light liquid (1), 15 percent light oil (2), 20 percent heavy oil (3 and 4), 10 percent unconverted). However, operating without any solvent also gave satisfactory results (88 percent overall conversion, 40 percent light liquid, 10 percent light oil, 10 percent heavy oil, 12 percent unconverted. Detailed gas chromatography-mass spectrometry (GC-MS) studies of selected liquid fractions indicate a high degree of aromaticity as tetralins, hydrophenanthrenes, and hydropyrenes.« less
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