skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electron-phonon scattering rates in complex polar crystals

; ;
Publication Date:
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation (NA-20)
OSTI Identifier:
Grant/Contract Number:
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 10; Related Information: CHORUS Timestamp: 2017-09-18 10:36:06; Journal ID: ISSN 2469-9950
American Physical Society
Country of Publication:
United States

Citation Formats

Prange, M. P., Campbell, L. W., and Kerisit, S. Electron-phonon scattering rates in complex polar crystals. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.104307.
Prange, M. P., Campbell, L. W., & Kerisit, S. Electron-phonon scattering rates in complex polar crystals. United States. doi:10.1103/PhysRevB.96.104307.
Prange, M. P., Campbell, L. W., and Kerisit, S. 2017. "Electron-phonon scattering rates in complex polar crystals". United States. doi:10.1103/PhysRevB.96.104307.
title = {Electron-phonon scattering rates in complex polar crystals},
author = {Prange, M. P. and Campbell, L. W. and Kerisit, S.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.104307},
journal = {Physical Review B},
number = 10,
volume = 96,
place = {United States},
year = 2017,
month = 9

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on September 18, 2018
Publisher's Accepted Manuscript

Save / Share:
  • The thermalization of fast electrons by phonons is studied in CsI, NaI, SrI2, and YAP. This numerical study uses an improvement to a recently developed ab initio method based on a density functional perturbation theoretical description of the phonon modes that provides a way to go beyond widely used phonon models based on binary crystals. Improvements to this method are described, and scattering rates are presented and discussed. The results here treat polar and nonpolar scattering on equal footing and allow an assessment of the relative importance of the two types of scattering. The relative activity of the numerous phononmore » modes in materials with complicated structures is discussed, and a simple criterion for finding the modes that scatter strongly is presented.« less
  • Cited by 1
  • N-polar GaN channel mobility is important for high frequency device applications. Here, we report theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2DEG) in N-polar GaN quantum well channels with high-k dielectrics. Rode's iterative calculation is used to predict the scattering rate and mobility. Coupling of the GaN plasmon modes with the SO modes is taken into account and dynamic screening is employed under linear polarization response. The effect of SO phonons on 2DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels withmore » HfO{sub 2} and ZrO{sub 2} high-k dielectrics is low and limits the total mobility. The SO scattering for SiN dielectric on GaN was found to be negligible due to its high SO phonon energy. Using Al{sub 2}O{sub 3}, the SO phonon scattering does not affect mobility significantly only except the case when the channel is too thin with a low 2DEG density.« less
  • The rates of charge carrier relaxation by phonon emission are of substantial importance in the field of hot carrier solar cell, primarily in investigation of mechanisms to slow down hot carrier cooling. In this work, energy and momentum resolved deformation potentials relevant to electron-phonon scattering are computed for wurtzite InN and GaN as well as an InN/GaN multiple quantum well (MQW) superlattice using ab-initio methods. These deformation potentials reveal important features such as discontinuities across the electronic bandgap of the materials and variations over tens of eV. The energy dependence of the deformation potential is found to be very similarmore » for wurtzite nitrides despite differences between the In and Ga pseudopotentials and their corresponding electronic band structures. Charge carrier relaxation by this mechanism is expected to be minimal for electrons within a few eV of the conduction band edge. However, hole scattering at energies more accessible to excitation by solar radiation is possible between heavy and light hole states. Moderate reductions in overall scattering rates are observed in MQW relative to the bulk nitride materials.« less