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Title: Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 - x K x ) ( Z n 1 - y M n y ) 2 A s 2 with independent spin and charge doping

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Natural Science Foundation of China (NNSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); Chinese Academy of Sciences (CAS); Argonne National Laboratory - Advanced Photon Source
OSTI Identifier:
1392094
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 93; Journal Issue: 22; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English

Citation Formats

Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., and Jin, C. Q. Pressure effect on the magnetism of the diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2 with independent spin and charge doping. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.93.224403.
Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., & Jin, C. Q. Pressure effect on the magnetism of the diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2 with independent spin and charge doping. United States. https://doi.org/10.1103/PhysRevB.93.224403
Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., and Jin, C. Q. 2016. "Pressure effect on the magnetism of the diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2 with independent spin and charge doping". United States. https://doi.org/10.1103/PhysRevB.93.224403.
@article{osti_1392094,
title = {Pressure effect on the magnetism of the diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2 with independent spin and charge doping},
author = {Sun, F. and Li, N. N. and Chen, B. J. and Jia, Y. T. and Zhang, L. J. and Li, W. M. and Zhao, G. Q. and Xing, L. Y. and Fabbris, G. and Wang, Y. G. and Deng, Z. and Uemura, Y. J. and Mao, H. K. and Haskel, D. and Yang, W. G. and Jin, C. Q.},
abstractNote = {},
doi = {10.1103/PhysRevB.93.224403},
url = {https://www.osti.gov/biblio/1392094}, journal = {Physical Review B},
issn = {2469-9950},
number = 22,
volume = 93,
place = {United States},
year = {Wed Jun 01 00:00:00 EDT 2016},
month = {Wed Jun 01 00:00:00 EDT 2016}
}

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