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Title: In Situ Fatigue of Cu Thin Films using a nanoDMA modified nanoindentation system.

Abstract

Abstract not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1390469
Report Number(s):
SAND2016-8776C
647200
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the The 16th European Microscopy Congress held August 28 - September 2, 2016 in Lyon, France.
Country of Publication:
United States
Language:
English

Citation Formats

Bufford, Daniel Charles, Douglas Stauffer, Mook, William, S.A. Syed Asif, Boyce, Brad Lee, and Hattar, Khalid Mikhiel. In Situ Fatigue of Cu Thin Films using a nanoDMA modified nanoindentation system.. United States: N. p., 2016. Web.
Bufford, Daniel Charles, Douglas Stauffer, Mook, William, S.A. Syed Asif, Boyce, Brad Lee, & Hattar, Khalid Mikhiel. In Situ Fatigue of Cu Thin Films using a nanoDMA modified nanoindentation system.. United States.
Bufford, Daniel Charles, Douglas Stauffer, Mook, William, S.A. Syed Asif, Boyce, Brad Lee, and Hattar, Khalid Mikhiel. 2016. "In Situ Fatigue of Cu Thin Films using a nanoDMA modified nanoindentation system.". United States. doi:. https://www.osti.gov/servlets/purl/1390469.
@article{osti_1390469,
title = {In Situ Fatigue of Cu Thin Films using a nanoDMA modified nanoindentation system.},
author = {Bufford, Daniel Charles and Douglas Stauffer and Mook, William and S.A. Syed Asif and Boyce, Brad Lee and Hattar, Khalid Mikhiel},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 9
}

Conference:
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  • Thin films are used in many applications where special properties are needed to insure performance and reliability. Of particular interest are thin tantalum nitride films. They are used extensively in microelectronic applications because of their long term stability and low thermal coefficient of resistance. They are sputter deposited which produces films with a high structural defect content and high compressive residual stresses both of which can alter the physical and mechanical properties of microelectronic thin films. Although these films are strong heat generators, they exhibit no changes in structure or composition of the interface with aluminum oxide substrates that degrademore » performance or reliability. However, the use of high power density components is driving a move to replace aluminum oxide with aluminum nitride for greater heat transfer. 6 This replacement substrate creates concern as residual stresses and long-term operation could induce detrimental changes along the thin film interface not observed in aluminum oxide devices. As a result, the authors employed nanoindentation and continuous nanoscratch testing to determine the effects of the intrinsic compressive residual stresses on the properties and fracture resistance of the thin tantalum nitride films. These techniques sample small volumes of material while preserving the production configuration of a free surface. Although nanoscratch tests lack a rigorous derivation of stress distributions and strain energy release rates, good approximations for strain energy release rates can be obtained using mechanics-based models for blister formation where residual stresses dominate interfacial fracture behavior. When combined with scanning and transmission electron microscopy, the results define structure-property relationships and resistance to fracture of these hard films.« less
  • No abstract prepared.
  • Abstract not provided.
  • This paper reports on high quality YBa{sub 2}Cu{sub 3}O{sub 7} thin films grown in situ on various substrates (SrTiO{sub 3}, Al{sub 2}O{sub 3}, Si) using MBE techniques and an ozone jet. The yttrium and copper are evaporated from electron gun sources and the barium is evaporated from a Knudsen cell. All sources are controlled by a single mass spectrometer feedback system to obtain the correct fluxes at high partial ozone pressures. During deposition the partial ozone pressure at the substrate position is estimated to be 10{sup {minus}3}-10{sup {minus}2} mbar. The substrate holder temperature is 700{degrees} C. The real substrate temperaturemore » is estimated to be lower than 650{degrees} C. The films are analyzed with R(T), X-ray diffraction and RBS measurements. SEM photographs are taken of the surface.« less
  • The surface termination of c-axis oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) and the oxygen incorporation mechanism has been investigated using a unique combination of spectroscopic ellipsometry (SE) and time of flight ion scattering and recoil spectrometry (ToF-ISARS). The high surface sensitivity of the ToF-ISARS technique combined with the bulk oxygen sensitivity of SE are shown to yield complimentary information. The SE provided the film orientation and quality, while ToF-ISARS supplied surface compositional and structural information and enabled isotopic {sup 18}O tracer studies. It was determined that the O content of the film had little effect on the surface termination ofmore » the film, indicating a lack of labile Cu(1) sites at the c-axis oriented YBCO surface. Also, strong evidence for a Ba or BaO terminated structure is shown. The data related to the {sup 18}O tracer studies indicate that O from the reaction ambient incorporates only into the labile Cu(1) sites during both deposition and annealing, while stable O sites were populated with O from the sputtered target, indicating either the need for sputtered atomic O or sputtered YCuO complexes to occupy the stable Cu(2) sites.« less