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Title: Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3)

Abstract

High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr 3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO 3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcoming the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr 3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10 4 cm s –1), and low defect density of 10 12 cm –3, which are comparable to those of CsPbBr 3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunitiesmore » for a variety of high-performance optoelectronics devices.« less

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2];  [3];  [2];  [2]; ORCiD logo [2];  [2];  [3];  [2];  [2];  [4]; ORCiD logo [4]; ORCiD logo [3];  [2]; ORCiD logo [2]
  1. Univ. of Wisconsin-Madison, Madison, WI (United States); Xi'an Jiaotong Univ., Shaanxi (People's Republic of China)
  2. Univ. of Wisconsin-Madison, Madison, WI (United States)
  3. Hunan Univ., Changsha (People's Republic of China)
  4. Xi'an Jiaotong Univ., Shaanxi (People's Republic of China)
Publication Date:
Research Org.:
Univ. of Wisconsin-Madison, Madison, WI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1390338
Alternate Identifier(s):
OSTI ID: 1417657
Grant/Contract Number:  
FG02-09ER46664; SC0002162
Resource Type:
Journal Article: Published Article
Journal Name:
Journal of the American Chemical Society
Additional Journal Information:
Journal Volume: 139; Journal Issue: 38; Journal ID: ISSN 0002-7863
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Chen, Jie, Morrow, Darien J., Fu, Yongping, Zheng, Weihao, Zhao, Yuzhou, Dang, Lianna, Stolt, Matthew J., Kohler, Daniel D., Wang, Xiaoxia, Czech, Kyle J., Hautzinger, Matthew P., Shen, Shaohua, Guo, Liejin, Pan, Anlian, Wright, John C., and Jin, Song. Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO3). United States: N. p., 2017. Web. doi:10.1021/jacs.7b07506.
Chen, Jie, Morrow, Darien J., Fu, Yongping, Zheng, Weihao, Zhao, Yuzhou, Dang, Lianna, Stolt, Matthew J., Kohler, Daniel D., Wang, Xiaoxia, Czech, Kyle J., Hautzinger, Matthew P., Shen, Shaohua, Guo, Liejin, Pan, Anlian, Wright, John C., & Jin, Song. Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO3). United States. doi:10.1021/jacs.7b07506.
Chen, Jie, Morrow, Darien J., Fu, Yongping, Zheng, Weihao, Zhao, Yuzhou, Dang, Lianna, Stolt, Matthew J., Kohler, Daniel D., Wang, Xiaoxia, Czech, Kyle J., Hautzinger, Matthew P., Shen, Shaohua, Guo, Liejin, Pan, Anlian, Wright, John C., and Jin, Song. Tue . "Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO3)". United States. doi:10.1021/jacs.7b07506.
@article{osti_1390338,
title = {Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO3)},
author = {Chen, Jie and Morrow, Darien J. and Fu, Yongping and Zheng, Weihao and Zhao, Yuzhou and Dang, Lianna and Stolt, Matthew J. and Kohler, Daniel D. and Wang, Xiaoxia and Czech, Kyle J. and Hautzinger, Matthew P. and Shen, Shaohua and Guo, Liejin and Pan, Anlian and Wright, John C. and Jin, Song},
abstractNote = {High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcoming the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (104 cm s–1), and low defect density of 1012 cm–3, which are comparable to those of CsPbBr3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.},
doi = {10.1021/jacs.7b07506},
journal = {Journal of the American Chemical Society},
number = 38,
volume = 139,
place = {United States},
year = {Tue Sep 05 00:00:00 EDT 2017},
month = {Tue Sep 05 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1021/jacs.7b07506

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Cited by: 6 works
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