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Title: MEMS vibrating-beam accelerometer with piezoelectric drive

Abstract

A high-temperature drive component for a double-ended tuning fork (DETF). The drive component attaches to a surface of at least one of the tines. The drive component includes at least one piezoelectric trace sandwiched at least partially between two electrical traces. At least one of the tines includes a doped silicon base with drive component located thereon. One of the electrical traces is electrically connected to the doped silicon base and the other is electrically isolated from the doped silicon base.

Inventors:
;
Publication Date:
Research Org.:
Honeywell International Inc. Morris Plains, NJ (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1390062
Patent Number(s):
9,759,739
Application Number:
13/019,913
Assignee:
Honeywell International Inc. DOEEE
DOE Contract Number:  
EE0002754
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Feb 02
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION

Citation Formats

Strehlow, John, and MacGugan, Doug. MEMS vibrating-beam accelerometer with piezoelectric drive. United States: N. p., 2017. Web.
Strehlow, John, & MacGugan, Doug. MEMS vibrating-beam accelerometer with piezoelectric drive. United States.
Strehlow, John, and MacGugan, Doug. Tue . "MEMS vibrating-beam accelerometer with piezoelectric drive". United States. https://www.osti.gov/servlets/purl/1390062.
@article{osti_1390062,
title = {MEMS vibrating-beam accelerometer with piezoelectric drive},
author = {Strehlow, John and MacGugan, Doug},
abstractNote = {A high-temperature drive component for a double-ended tuning fork (DETF). The drive component attaches to a surface of at least one of the tines. The drive component includes at least one piezoelectric trace sandwiched at least partially between two electrical traces. At least one of the tines includes a doped silicon base with drive component located thereon. One of the electrical traces is electrically connected to the doped silicon base and the other is electrically isolated from the doped silicon base.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 12 00:00:00 EDT 2017},
month = {Tue Sep 12 00:00:00 EDT 2017}
}

Patent:

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Works referenced in this record:

Acceleration Sensor
patent-application, September 2011


An Electromagnetically Excited Silicon Nitride Beam Resonant Accelerometer
journal, February 2009

  • Chen, Deyong; Wu, Zhengwei; Liu, Lei
  • Sensors, Vol. 9, Issue 3, p. 1330-1338
  • DOI: 10.3390/s90301330