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Title: Resistive field structures for semiconductor devices and uses therof

Abstract

The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additional methods and architectures are described herein.

Inventors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1389791
Patent Number(s):
9,761,675
Application Number:
14/989,633
Assignee:
National Technology & Engineering Solutions of Sandia, LLC SNL-A
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Jan 06
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Marinella, Matthew, DasGupta, Sandeepan, Kaplar, Robert, and Baca, Albert G. Resistive field structures for semiconductor devices and uses therof. United States: N. p., 2017. Web.
Marinella, Matthew, DasGupta, Sandeepan, Kaplar, Robert, & Baca, Albert G. Resistive field structures for semiconductor devices and uses therof. United States.
Marinella, Matthew, DasGupta, Sandeepan, Kaplar, Robert, and Baca, Albert G. Tue . "Resistive field structures for semiconductor devices and uses therof". United States. doi:. https://www.osti.gov/servlets/purl/1389791.
@article{osti_1389791,
title = {Resistive field structures for semiconductor devices and uses therof},
author = {Marinella, Matthew and DasGupta, Sandeepan and Kaplar, Robert and Baca, Albert G.},
abstractNote = {The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additional methods and architectures are described herein.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 12 00:00:00 EDT 2017},
month = {Tue Sep 12 00:00:00 EDT 2017}
}

Patent:

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  • Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.
  • Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.
  • Provided are methods for making a device or device component by providing a multi layer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.
  • A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatusmore » are also disclosed.« less
  • An improved semiconductor gamma camera is disclosed. The gamma camera includes a p-i-n semiconductor diode which detects the presence and energy of gamma radiation from a source. Typically the source is radioactive material in a patient organ which is detected and then interpreted by a doctor while diagnosing the condition of that organ. The detector includes an improved electrical connection technique to allow the p-i-n diode to be connected to electronic circuitry necessary to provide spatial and energy information. In the improved camera first a passivation layer is deposited on both faces of the p-i-n diode and then a resistivemore » layer is applied to form a reliable easily reproduced electrical contact to the junction. These two layers in combination prevent foreign matter from contacting the semiconductor material comprising the detector while providing interconnection to the electronic circuitry.« less