skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Resistive field structures for semiconductor devices and uses therof

Abstract

The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additional methods and architectures are described herein.

Inventors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1389791
Patent Number(s):
9,761,675
Application Number:
14/989,633
Assignee:
National Technology & Engineering Solutions of Sandia, LLC SNL-A
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Jan 06
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Marinella, Matthew, DasGupta, Sandeepan, Kaplar, Robert, and Baca, Albert G. Resistive field structures for semiconductor devices and uses therof. United States: N. p., 2017. Web.
Marinella, Matthew, DasGupta, Sandeepan, Kaplar, Robert, & Baca, Albert G. Resistive field structures for semiconductor devices and uses therof. United States.
Marinella, Matthew, DasGupta, Sandeepan, Kaplar, Robert, and Baca, Albert G. Tue . "Resistive field structures for semiconductor devices and uses therof". United States. doi:. https://www.osti.gov/servlets/purl/1389791.
@article{osti_1389791,
title = {Resistive field structures for semiconductor devices and uses therof},
author = {Marinella, Matthew and DasGupta, Sandeepan and Kaplar, Robert and Baca, Albert G.},
abstractNote = {The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additional methods and architectures are described herein.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 12 00:00:00 EDT 2017},
month = {Tue Sep 12 00:00:00 EDT 2017}
}

Patent:

Save / Share: