Resistive field structures for semiconductor devices and uses therof

Marinella, Matthew; DasGupta, Sandeepan; Kaplar, Robert; Baca, Albert G.

Resistive field structures for semiconductor devices and uses therof

Patent · 12 September 2017

OSTI ID:1389791

Marinella, Matthew; DasGupta, Sandeepan; Kaplar, Robert; Baca, Albert G.

The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additional methods and architectures are described herein.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: National Technology & Engineering Solutions of Sandia, LLC

Patent Number(s):: 9,761,675

Application Number:: 14/989,633

OSTI ID:: 1389791

Country of Publication:: United States

Language:: English

References (11)

Breakdown characteristics in AlGaN/GaN HEMTs with multi-field-plate structure Asano, T.; Yamada, N.; Saito, T. 2012 IEEE International Meeting for Future of Electron Devices, Kansai https://doi.org/10.1109/IMFEDK.2012.6218601	conference	May 2012
Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator Karmalkar, Shreepad; Mishra, Umesh K. Solid-State Electronics, Vol. 45, Issue 9, p. 1645-1652 https://doi.org/10.1016/S0038-1101(01)00158-7	journal	September 2001
Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement Cho, Kyu-Heon; Kim, Young-Shil; Lim, Jiyong Solid-State Electronics, Vol. 54, Issue 4, p. 405-409 https://doi.org/10.1016/j.sse.2009.12.034	journal	April 2010
Influence of Surface Defect Charge at AlGaN–GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage Saito, W.; Kuraguchi, M.; Takada, Y. IEEE Transactions on Electron Devices, Vol. 52, Issue 2, p. 159-164 https://doi.org/10.1109/TED.2004.842710	journal	February 2005
Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate Karmalkar, S.; Mishra, U. K. IEEE Transactions on Electron Devices, Vol. 48, Issue 8, p. 1515-1521 https://doi.org/10.1109/16.936500	journal	January 2001
A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si Das, Jo; Everts, Jordi; Van Den Keybus, Jeroen IEEE Electron Device Letters, Vol. 32, Issue 10, p. 1370-1372 https://doi.org/10.1109/LED.2011.2162393	journal	October 2011
Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping Nakarmi, M. L.; Kim, K. H.; Li, J. Applied Physics Letters, Vol. 82, Issue 18, p. 3041-3043 https://doi.org/10.1063/1.1559444	journal	May 2003
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates Dora, Y.; Chakraborty, A.; Mccarthy, L. IEEE Electron Device Letters, Vol. 27, Issue 9, p. 713-715 https://doi.org/10.1109/LED.2006.881020	journal	September 2006
Semiconductors for high‐voltage, vertical channel field‐effect transistors Baliga, B. J. Journal of Applied Physics, Vol. 53, Issue 3, p. 1759-1764 https://doi.org/10.1063/1.331646	journal	March 1982
Effect of Field Plate on the RF Performance of AlGaN/GaN HEMT Devices Chiang, Che-Yang; Hsu, Heng-Tung; Chang, Edward Yi Physics Procedia, Vol. 25, p. 86-91 https://doi.org/10.1016/j.phpro.2012.03.054	journal	January 2012
Optical and electrical properties of Mg-doped p-type Al_xGa_1−xN Li, J.; Oder, T. N.; Nakarmi, M. L. Applied Physics Letters, Vol. 80, Issue 7, p. 1210-1212 https://doi.org/10.1063/1.1450038	journal	February 2002

Similar Records

Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime

Journal Article · 2017 · IEEE Transactions on Electron Devices · OSTI ID:1399503

Device for measurement of resistance of semiconductors in heating electric fields

Journal Article · 1988 · Instrum. Exp. Tech. (Engl. Transl.); (United States) · OSTI ID:5818062

Methods for dry etching semiconductor devices

Patent · 2016 · OSTI ID:1330708

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY

Resistive field structures for semiconductor devices and uses therof

Citation Formats

References (11)

Similar Records

Related Subjects