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Title: First-Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: C N +O N and GaN:C N

Authors:
 [1];  [2];  [3];  [3];  [4];  [5]
  1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 P. R. China, Department of Physics and Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510640 P. R. China
  2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 P. R. China
  3. Department of Physics and Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510640 P. R. China
  4. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 P. R. China, Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 P. R. China
  5. Materials Sciences Division, Lawrence Berkeley National Laboratory, One Cyclotron Road, Mail Stop 66 Berkeley CA 94720 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1389685
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Advanced Optical Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 21; Related Information: CHORUS Timestamp: 2017-11-02 15:37:13; Journal ID: ISSN 2195-1071
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Zhang, Hai-Shan, Shi, Lin, Yang, Xiao-Bao, Zhao, Yu-Jun, Xu, Ke, and Wang, Lin-Wang. First-Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: C N +O N and GaN:C N. Germany: N. p., 2017. Web. doi:10.1002/adom.201700404.
Zhang, Hai-Shan, Shi, Lin, Yang, Xiao-Bao, Zhao, Yu-Jun, Xu, Ke, & Wang, Lin-Wang. First-Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: C N +O N and GaN:C N. Germany. doi:10.1002/adom.201700404.
Zhang, Hai-Shan, Shi, Lin, Yang, Xiao-Bao, Zhao, Yu-Jun, Xu, Ke, and Wang, Lin-Wang. Tue . "First-Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: C N +O N and GaN:C N". Germany. doi:10.1002/adom.201700404.
@article{osti_1389685,
title = {First-Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: C N +O N and GaN:C N},
author = {Zhang, Hai-Shan and Shi, Lin and Yang, Xiao-Bao and Zhao, Yu-Jun and Xu, Ke and Wang, Lin-Wang},
abstractNote = {},
doi = {10.1002/adom.201700404},
journal = {Advanced Optical Materials},
number = 21,
volume = 5,
place = {Germany},
year = {Tue Sep 12 00:00:00 EDT 2017},
month = {Tue Sep 12 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1002/adom.201700404

Citation Metrics:
Cited by: 1 work
Citation information provided by
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