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Title: Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

Abstract

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devices showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [1]
  1. State Univ. of New York (SUNY), Stony Brook, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1389247
Report Number(s):
BNL-114266-2017-JA
Journal ID: ISSN 1077-260X; KC0403020; TRN: US1702228
Grant/Contract Number:
SC0012704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Journal of Selected Topics in Quantum Electronics
Additional Journal Information:
Journal Volume: 23; Journal Issue: 6; Journal ID: ISSN 1077-260X
Publisher:
IEEE Lasers and Electro-optics Society
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; GaSBl type-1 QW; midinfrared; semiconductor lasers; cascade lasers; high power; narrow ridge; DFB

Citation Formats

Shterengas, Leon, Kipshidze, Gela, Hosoda, Takashi, Liang, Rui, Feng, Tao, Wang, Meng, Stein, Aaron, and Belenky, Gregory. Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers. United States: N. p., 2017. Web. doi:10.1109/JSTQE.2017.2687763.
Shterengas, Leon, Kipshidze, Gela, Hosoda, Takashi, Liang, Rui, Feng, Tao, Wang, Meng, Stein, Aaron, & Belenky, Gregory. Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers. United States. doi:10.1109/JSTQE.2017.2687763.
Shterengas, Leon, Kipshidze, Gela, Hosoda, Takashi, Liang, Rui, Feng, Tao, Wang, Meng, Stein, Aaron, and Belenky, Gregory. Fri . "Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers". United States. doi:10.1109/JSTQE.2017.2687763. https://www.osti.gov/servlets/purl/1389247.
@article{osti_1389247,
title = {Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers},
author = {Shterengas, Leon and Kipshidze, Gela and Hosoda, Takashi and Liang, Rui and Feng, Tao and Wang, Meng and Stein, Aaron and Belenky, Gregory},
abstractNote = {Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devices showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.},
doi = {10.1109/JSTQE.2017.2687763},
journal = {IEEE Journal of Selected Topics in Quantum Electronics},
number = 6,
volume = 23,
place = {United States},
year = {Fri Mar 24 00:00:00 EDT 2017},
month = {Fri Mar 24 00:00:00 EDT 2017}
}

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Cited by: 5works
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  • The cascade pumping scheme reduced the threshold current density of high power type-I quantum well GaSb-based λ ∼ 3 μm diode lasers down to ∼100 A/cm{sup 2} at room temperature. Laser heterostructures had single GaInAsSb quantum well gain stages connected in series by means of GaSb/AlSb/InAs tunnel junctions followed by InAs/AlSb electron injectors. Devices with densely stacked two and three gain stages and 100-μm-wide aperture demonstrated peak power conversion efficiency of 16% and continuous wave output power of 960 mW. Corresponding narrow ridge lasers demonstrated above 100 mW of output power. The experiment showed that the bandwidth of the gain and its rate of increase withmore » current depended strongly on the thickness of AlSb layer separating electron injectors from quantum wells. The possible impact of electron injector interfaces and ionized impurities on the carrier scattering and recombination in the active quantum well is discussed.« less
  • The laterally coupled distributed feedback (LC-DFB) GaSb-based type-I quantum well cascade diode lasers using the second- and the sixth-order gratings to stabilize the output spectrum near 3.22 μm were designed and fabricated in this paper. The laser heterostructure contained three cascades. The devices were manufactured using a single dry etching step defining the ~5-μm-wide ridge with ~5-μm-wide gratings sections adjacent to the ridge sides. The grating coupling coefficients were estimated to be about 1 cm -1. The stability of the single-frequency operation was ensured by alignment of the DFB mode to the relatively wide gain peak. The 2-mm-long second-order LC-DFBmore » lasers generated above 10 mW of continuous-wave (CW) output power at 20°C in epi-side-up configuration and demonstrated power conversion efficiency above 2%. The sixth-order LC-DFB lasers showed lower efficiency but still generated several milliwatts of CW output power. Finally, the devices demonstrated a CW current tuning range of about 3.5 nm at the temperature of 20°C.« less
  • We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.
  • This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers. This record long wavelength lasing is achieved by applying InP-based Sb-free structures with eight periods of strain-compensated InAs quantum wells grown on metamorphic In{sub 0.8}Al{sub 0.2}As template layers. The continuous-wave threshold current density is 797 A/cm{sup 2} and the idealized extrapolated threshold current density for infinite cavity length is as low as 58 A/cm{sup 2} per quantum well at 120 K. This scheme is a promising pathway for extending the wavelength range of type-I quantum well lasers on InP substrates.