Evidence for the formation of SiGe nanoparticles in Ge-implanted Si3N4

Mirzaei, S.; Kremer, F.; Feng, R.; Glover, C. J.; Sprouster, D. J.

doi:10.1063/1.4977507

Title: Evidence for the formation of SiGe nanoparticles in Ge-implanted Si₃N₄

Journal Article · Tue Mar 14 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4977507· OSTI ID:1389239

Mirzaei, S. ^[1];

^[1]; Feng, R. ^[1];

^[2]; Sprouster, D. J. ^[3]

Australian National Univ., Canberra, ACT (Australia)
Australian Nuclear Science and Technology Organisation (ANSTO), Melbourne, VIC (Australia). Australian Synchrotron
Brookhaven National Lab. (BNL), Upton, NY (United States)

SiGe nanoparticles were formed in an amorphous Si₃N₄ matrix by Ge⁺ ion implantation and thermal annealing. The size of the nanoparticles was determined by transmission electron microscopy and their atomic structure by x-ray absorption spectroscopy. Nanoparticles were observed for excess Ge concentrations in the range from 9 to 12 at. % after annealing at temperatures in the range from 700 to 900 °C. The average nanoparticle size increased with excess Ge concentration and annealing temperature and varied from an average diameter of 1.8±0.2 nm for the lowest concentration and annealing temperature to 3.2±0.5 nm for the highest concentration and annealing temperature. Our study demonstrates that the structural properties of embedded SiGe nanoparticles in amorphous Si₃N₄ are sensitive to the implantation and post implantation conditions. Furthermore, we demonstrate that ion implantation is a novel pathway to fabricate and control the SiGe nanoparticle structure and potentially useful for future optoelectronic device applications.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Nuclear Physics (NP)

Grant/Contract Number:: SC0012704

OSTI ID:: 1389239

Report Number(s):: BNL-114218-2017-JA

Journal Information:: Journal of Applied Physics, Vol. 121, Issue 10; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (28)

ATHENA , ARTEMIS , HEPHAESTUS : data analysis for X-ray absorption spectroscopy using IFEFFIT Ravel, B.; Newville, M. Journal of Synchrotron Radiation, Vol. 12, Issue 4 https://doi.org/10.1107/S0909049505012719	journal	June 2005
X-ray absorption and EXAFS studies of Ge coordination and bonding in high-pressure nitrides: ?-Ge3N4 (phenacite) and ?-Ge3N4 (spinel) Bull, Craig L.; McMillan, Paul F.; Iti�, Jean-Paul physica status solidi (a), Vol. 201, Issue 5 https://doi.org/10.1002/pssa.200306786	journal	April 2004
Investigation of the formation and phase transition of Ge and Co nanoparticles in a SiO2 matrix Cantelli, V.; von Borany, J.; Mücklich, A. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 238, Issue 1-4 https://doi.org/10.1016/j.nimb.2005.06.061	journal	August 2005
Segregation in SiGe clusters Tarus, J.; Tantarimäki, M.; Nordlund, K. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 228, Issue 1-4 https://doi.org/10.1016/j.nimb.2004.10.022	journal	January 2005
Photoluminescence from ${Si}_{1 - x} {Ge}_{x}$ alloy nanocrystals Takeoka, Shinji; Toshikiyo, Kimiaki; Fujii, Minoru Physical Review B, Vol. 61, Issue 23 https://doi.org/10.1103/PhysRevB.61.15988	journal	June 2000
Epitaxial growth of germanium dots on Si (001) surface covered by a very thin silicon nitride layer Derivaz, M.; Noé, P.; Jalabert, D. Microelectronic Engineering, Vol. 61-62 https://doi.org/10.1016/S0167-9317(02)00492-6	journal	July 2002
First-shell bond lengths in ${Si}_{x} {Ge}_{1 - x}$ crystalline alloys Aubry, J. C.; Tyliszczak, T.; Hitchcock, A. P. Physical Review B, Vol. 59, Issue 20 https://doi.org/10.1103/PhysRevB.59.12872	journal	May 1999
Size-dependent characterization of embedded Ge nanocrystals: Structural and thermal properties Araujo, L. L.; Giulian, R.; Sprouster, D. J. Physical Review B, Vol. 78, Issue 9 https://doi.org/10.1103/PhysRevB.78.094112	journal	September 2008
Stress measurements of germanium nanocrystals embedded in silicon oxide Wellner, A.; Paillard, V.; Bonafos, C. Journal of Applied Physics, Vol. 94, Issue 9 https://doi.org/10.1063/1.1617361	journal	November 2003
Evolution of the structure and magneto-optical properties of ion beam synthesized iron nanoclusters Kennedy, J.; Leveneur, J.; Takeda, Y. Journal of Materials Science, Vol. 47, Issue 3 https://doi.org/10.1007/s10853-011-5849-1	journal	August 2011
Nucleation and Growth of Fe Nanoparticles in SiO ₂ : A TEM, XPS, and Fe L-Edge XANES Investigation Leveneur, Jérôme; Waterhouse, Geoffrey I. N.; Kennedy, John The Journal of Physical Chemistry C, Vol. 115, Issue 43 https://doi.org/10.1021/jp206357c	journal	October 2011
Fabrication of surface magnetic nanoclusters using low energy ion implantation and electron beam annealing Kennedy, J.; Leveneur, J.; Williams, G. V. M. Nanotechnology, Vol. 22, Issue 11 https://doi.org/10.1088/0957-4484/22/11/115602	journal	February 2011
Ge nanocrystals in magnetron sputtered SiO2 Jensen, J. Skov; Pedersen, T. P. Leervad; Pereira, R. Applied Physics A, Vol. 83, Issue 1 https://doi.org/10.1007/s00339-005-3479-7	journal	January 2006
Nanocrystals for silicon-based light-emitting and memory devices Ray, S. K.; Maikap, S.; Banerjee, W. Journal of Physics D: Applied Physics, Vol. 46, Issue 15 https://doi.org/10.1088/0022-3727/46/15/153001	journal	March 2013
Composition-dependent bond lengths in crystalline and amorphized ${Ge}_{x} {Si}_{1 - x}$ alloys Ridgway, M. C.; Yu, K. M.; Glover, C. J. Physical Review B, Vol. 60, Issue 15 https://doi.org/10.1103/PhysRevB.60.10831	journal	October 1999
Strong quantum-confined Stark effect in germanium quantum-well structures on silicon Kuo, Yu-Hsuan; Lee, Yong Kyu; Ge, Yangsi Nature, Vol. 437, Issue 7063 https://doi.org/10.1038/nature04204	journal	October 2005
Investigation of indirect structural and chemical parameters of GeSi nanoparticles in a silica matrix by combined synchrotron radiation techniques Gasperini, Antonio; Malachias, Angelo; Fabbris, Gilberto Journal of Applied Crystallography, Vol. 45, Issue 1 https://doi.org/10.1107/S0021889811049302	journal	December 2011
Growth of Ge, Si, and SiGe nanocrystals in SiO ₂ matrices Zhu, Jane G.; White, C. W.; Budai, J. D. Journal of Applied Physics, Vol. 78, Issue 7 https://doi.org/10.1063/1.359843	journal	October 1995
Probing the Electronic Density of States of Germanium Nanoparticles: A Method for Determining Atomic Structure Williamson, A. J.; Bostedt, C.; van Buuren, T. Nano Letters, Vol. 4, Issue 6 https://doi.org/10.1021/nl049654m	journal	June 2004
Formation of Ge nanoparticles in SiO _x N _y by ion implantation and thermal annealing Mirzaei, S.; Kremer, F.; Sprouster, D. J. Journal of Applied Physics, Vol. 118, Issue 15 https://doi.org/10.1063/1.4933396	journal	October 2015
Luminescence characteristics of Ge nanocrystals embedded in SiO2 matrix Ray, S. K.; Das, K. Optical Materials, Vol. 27, Issue 5 https://doi.org/10.1016/j.optmat.2004.08.041	journal	February 2005
Facile Synthesis of Morphology-Controlled Platinum Nanocrystals Zhong, Xinhua; Feng, Yaoyu; Lieberwirth, Ingo Chemistry of Materials, Vol. 18, Issue 10 https://doi.org/10.1021/cm060463p	journal	May 2006
Size matters: why nanomaterials are different Roduner, Emil Chemical Society Reviews, Vol. 35, Issue 7 https://doi.org/10.1039/b502142c	journal	January 2006
Structural and electronic properties of $Si ∕ Ge$ nanoparticles Asaduzzaman, Abu Md.; Springborg, Michael Physical Review B, Vol. 74, Issue 16 https://doi.org/10.1103/PhysRevB.74.165406	journal	October 2006
Matrix role in Ge nanoclusters embedded in Si ₃ N ₄ or SiO ₂ Mirabella, S.; Cosentino, S.; Gentile, A. Applied Physics Letters, Vol. 101, Issue 1 https://doi.org/10.1063/1.4734395	journal	July 2012
Lift-off protocols for thin films for use in EXAFS experiments Decoster, S.; Glover, C. J.; Johannessen, B. Journal of Synchrotron Radiation, Vol. 20, Issue 3 https://doi.org/10.1107/S0909049513005049	journal	April 2013
The structure of amorphous, crystalline and liquid GeO ₂ Micoulaut, M.; Cormier, L.; Henderson, G. S. Journal of Physics: Condensed Matter, Vol. 18, Issue 45 https://doi.org/10.1088/0953-8984/18/45/R01	journal	October 2006
Ion-irradiation-induced preferential amorphization of Ge nanocrystals in silica Ridgway, M. C.; Azevedo, G. de M.; Elliman, R. G. Physical Review B, Vol. 71, Issue 9 https://doi.org/10.1103/PhysRevB.71.094107	journal	March 2005

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