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Title: Enhanced Electrical Activation in In-Implanted Si 0.35Ge 0.65 by C Co-Doping

Abstract

In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si 0.35Ge 0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C+In co-doping, the solid solubility of In in Si 0.35Ge 0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.

Authors:
 [1];  [1];  [2];  [1];  [3];  [4];  [1];  [5];  [5];  [6];  [1]
  1. Australian National Univ., Canberra, ACT (Australia)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Katholieke Univ. Leuven, Heverlee (Belgium)
  4. Australian Nuclear Science and Technology Organisation (ANSTO), Melbourne, VIC (Australia). Australian Synchrotron
  5. Aarhus Univ. (Denmark)
  6. RMIT Univ., Melbourne, VIC (Australia)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Nuclear Physics (NP) (SC-26)
OSTI Identifier:
1389235
Report Number(s):
BNL-114207-2017-JA
Journal ID: ISSN 2166-3831; TRN: US1702364
Grant/Contract Number:  
SC0012704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Materials Research Letters
Additional Journal Information:
Journal Volume: 5; Journal Issue: 1; Journal ID: ISSN 2166-3831
Publisher:
Taylor and Francis
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS

Citation Formats

Feng, Ruixing, Kremer, Felipe, Sprouster, David J., Mirzaei, Sahar, Decoster, Stefan, Glover, Chris J., Medling, Scott A., Hansen, John Lundsgaard, Nylandsted-Larsen, Arne, Russo, Salvy P., and Ridgway, Mark C. Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping. United States: N. p., 2016. Web. doi:10.1080/21663831.2016.1169229.
Feng, Ruixing, Kremer, Felipe, Sprouster, David J., Mirzaei, Sahar, Decoster, Stefan, Glover, Chris J., Medling, Scott A., Hansen, John Lundsgaard, Nylandsted-Larsen, Arne, Russo, Salvy P., & Ridgway, Mark C. Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping. United States. doi:10.1080/21663831.2016.1169229.
Feng, Ruixing, Kremer, Felipe, Sprouster, David J., Mirzaei, Sahar, Decoster, Stefan, Glover, Chris J., Medling, Scott A., Hansen, John Lundsgaard, Nylandsted-Larsen, Arne, Russo, Salvy P., and Ridgway, Mark C. Thu . "Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping". United States. doi:10.1080/21663831.2016.1169229. https://www.osti.gov/servlets/purl/1389235.
@article{osti_1389235,
title = {Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping},
author = {Feng, Ruixing and Kremer, Felipe and Sprouster, David J. and Mirzaei, Sahar and Decoster, Stefan and Glover, Chris J. and Medling, Scott A. and Hansen, John Lundsgaard and Nylandsted-Larsen, Arne and Russo, Salvy P. and Ridgway, Mark C.},
abstractNote = {In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C+In co-doping, the solid solubility of In in Si0.35Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.},
doi = {10.1080/21663831.2016.1169229},
journal = {Materials Research Letters},
number = 1,
volume = 5,
place = {United States},
year = {Thu Apr 21 00:00:00 EDT 2016},
month = {Thu Apr 21 00:00:00 EDT 2016}
}

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Works referenced in this record:

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996