Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

Feng, Ruixing; Kremer, Felipe; Sprouster, David J.; Mirzaei, Sahar; Decoster, Stefan; Glover, Chris J.; Medling, Scott A.; Hansen, John Lundsgaard; Nylandsted-Larsen, Arne; Russo, Salvy P.; Ridgway, Mark C.

doi:10.1080/21663831.2016.1169229

Title: Enhanced Electrical Activation in In-Implanted Si_0.35Ge_0.65 by C Co-Doping

Journal Article · Thu Apr 21 00:00:00 EDT 2016 · Materials Research Letters

DOI:https://doi.org/10.1080/21663831.2016.1169229· OSTI ID:1389235

Feng, Ruixing ^[1]; Kremer, Felipe ^[1]; Sprouster, David J. ^[2]; Mirzaei, Sahar ^[1]; Decoster, Stefan ^[3]; Glover, Chris J. ^[4]; Medling, Scott A. ^[1]; Hansen, John Lundsgaard ^[5]; Nylandsted-Larsen, Arne ^[5]; Russo, Salvy P. ^[6]; Ridgway, Mark C. ^[1]

Australian National Univ., Canberra, ACT (Australia)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Katholieke Univ. Leuven, Heverlee (Belgium)
Australian Nuclear Science and Technology Organisation (ANSTO), Melbourne, VIC (Australia). Australian Synchrotron
Aarhus Univ. (Denmark)
RMIT Univ., Melbourne, VIC (Australia)

In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si_0.35Ge_0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C+In co-doping, the solid solubility of In in Si_0.35Ge_0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Nuclear Physics (NP)

Grant/Contract Number:: SC0012704

OSTI ID:: 1389235

Report Number(s):: BNL-114207-2017-JA; TRN: US1702364

Journal Information:: Materials Research Letters, Vol. 5, Issue 1; ISSN 2166-3831

Publisher:: Taylor and FrancisCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 1 work

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